TA49154 Search Results

AN7254

Abstract: AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496 TB334
Contextual Info: RF1K49154 Data Sheet October 1999 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET File Number 4143.3 Features • 2A, 60V This Dual N-Channel power MOSFET is manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI

AN7254

Abstract: AN7260 AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496 TB334
Contextual Info: RF1K49154 Data Sheet October 1999 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET 4143.3 Features • 2A, 60V Title This Dual N-Channel power MOSFET is manufactured using F1K the latest manufacturing process technology. This process, 154 which uses feature sizes approaching those of LSI

2A60V

Contextual Info: HARFU S E M I C O N 0 ,¿5 - RF1K49154 .:MZi^6iW^-ESb Rated, Avalanche Rated, Dual N-Channel LittleFET Enhancement Mode Power MOSFET January 19^7 Features Description • 2A.60V The RF1K49154 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This

AN7254

Abstract: AN7260 AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496 TB334 an-7254
Contextual Info: RF1K49154 Data Sheet January 2002 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET Features • 2A, 60V This Dual N-Channel power MOSFET is manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI

Contextual Info: RF1K49154 Semiconductor April 1999 Data Sheet 2A, 60 V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET File Num ber Features • 2 A ,6 0 V This Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

Contextual Info: intervia RF1K49154 Data S h eet O c to b e r 1999 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET F ile N u m b e r 4143.3 Features • 2A , 60V T h is D ual N -C hannel p o w e r M O S F E T is m a nufactured using th e latest m a nu facturin g proce ss technology. T h is process,

mosfet motor dc 48v

Abstract: AN7254 AN7260 AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496
Contextual Info: RF1K49154 S E M I C O N D U C T O R 2A, 60V, ESD Rated, Avalanche Rated, Dual N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 2A, 60V The RF1K49154 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This