TA49093 Search Results

RF1K49093

Abstract: AN7254 AN9321 AN9322 MS-012AA RF1K4909396
Contextual Info: RF1K49093 S E M I C O N D U C T O R 2.5A, 12V, Avalanche Rated, Logic Level, Dual P-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 2.5A, 12V The RF1K49093 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI

Contextual Info: RF1K49093 HARRIS S E M I C O N D U C T O R 2.5A, 12V, Avalanche Rated, Logic Level, Dual P-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Description Features 2.5 A, 12V The RF1K49093 Dual P-Channel power MOSFET is manu­ factured using an advanced MegaFET process. This pro­

MS-012-AA

Abstract: RF1K4909396
Contextual Info: RF1K49093 fü HARRIS S E M I C O N D U C T O R January 1997^ .ss 2.5A, 12V, Avalanche Rated, Logic Level, Dual B>GN^ttneH1ttleFET Enhancement Mode Power MOSFET , Features Description • 2.5A, 12V The RF1K49093 Dual P-Channel power MOSFET is manu­ factured using an advanced MegaFET process. This pro­

RF1K49093

Abstract: RF1K4909396 AN9321 AN9322 MS-012AA TB334
Contextual Info: RF1K49093 Data Sheet January 2002 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET Features • 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,

RF1K4909396

Abstract: delta motor RF1K49093 AN9321 AN9322 MS-012AA TB334
Contextual Info: RF1K49093 Data Sheet August 1999 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET File Number 3969.5 Features • 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

Contextual Info: i n t e r e RF1K49093 » D a ta S h e e t A u g u s t 1999 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,

RF1K49093

Abstract: AN9321 AN9322 MS-012AA RF1K4909396 TB334
Contextual Info: RF1K49093 Data Sheet August 1999 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET File Number 3969.5 Features • 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses

relay 12v dc 5 chan

Contextual Info: RF1K49093 Data Sheet August 1999 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET File Number 3969.5 Features • 2.5A, 12V Title This Dual P-Channel power MOSFET is manufactured using F1K4 an advanced MegaFET process. This process, which uses