TA49092 Search Results

AN9321

Abstract: MS-012AA RF1K49092 RF1K4909296 TB334
Contextual Info: RF1K49092 Data Sheet August 1999 File Number 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET Features This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,

AN9321

Contextual Info: in te r r ii RF1K49092 D ata S h e e t A u g u s t 19 99 3.SA/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,

Contextual Info: RF1K49092 Data Sheet 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET August 1999 File Number 3968.5 Features • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) [ /Title (RF1K This complementary power MOSFET is manufactured using

AN9321

Abstract: AN9322 an7254 AN7260
Contextual Info: RF3V49092, RF3S49092SM in t e ik il D a ta S h e e t 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated

AN7254

Abstract: AN9321 AN-7260
Contextual Info: RF3V49092, RF3S49092SM in t e ik il D a ta S h e e t 20A/1QA, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power M O SFET Th e se complementary power M O S F E T s are manufactured using an advanced M e g aFET process. Th is process, which u ses feature size s approaching those of L S I integrated

p-channel pspice model

Abstract: AN9321 AN9322 MS-012AA RF1K49092 RF1K4909296
Contextual Info: RF1K49092 S E M I C O N D U C T O R January 1997 3.5A/2.5A, 12V, Avalanche Rated, Logic Level, Complementary LittleFET Enhancement Mode Power MOSFET Features Description • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) • UIS Rating Curve The RF1K49092 complementary power MOSFET is

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

Contextual Info: HARRIS R S E M I C O N D U C T O R January 1997 F 1 K 4 9 9 2 3.5A/2.5A, 12V, Avalanche Rated, Logic Level, Complementary LittleFET Enhancement Mode Power MOSFET Features Description • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) • UIS Rating Curve

RF3S49092SM9A

Abstract: MO-169AB RF3S49092SM RF3V49092 ZT600
Contextual Info: RF3V49092, RF3S49092SM interrii Data Sheet 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated

MOSFET S1A

Abstract: datasheet RF3V49092 MO-169AB RF3S49092SM RF3S49092SM9A RF3V49092 AN9322
Contextual Info: RF3V49092, RF3S49092SM Data Sheet 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated

AN9321

Abstract: MS-012AA RF1K49092 RF1K4909296 TB334 AN9322
Contextual Info: RF1K49092 Data Sheet January 2002 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET Features This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,

TPG1212

Abstract: PIN diode Pspice model
Contextual Info: RF3V49092, RF3S49092, RF3S49092SM S e m iconductor November 1998 Data Sheet 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFETs These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated

MO-169AB

Abstract: RF3S49092SM RF3S49092SM9A N-Channel UltraFET Power MOSFETs
Contextual Info: RF3S49092SM Data Sheet 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in

logic level complementary MOSFET

Contextual Info: RF1K49092 ÎSÎ HARRIS S E M I C O N D U CTÖR January 1997 3.5A/2.5A, 12V, Avalanche Rated, Logic Level, Complementary LittleFET Enhancement Mode Power MOSFET Features Description • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) • UIS Rating Curve The RF1K49092 complementary power MOSFET is