TA49045 Search Results

RFP60P03

Abstract: RF1S60P03SM RF1S60P03SM9A RFG60P03 TB334 IS421
Contextual Info: RFG60P03, RFP60P03, RF1S60P03SM Data Sheet July 1999 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs • 60A, 30V Formerly developmental type TA49045. Ordering Information PACKAGE 3951.3 Features These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature

RFP60P03

Abstract: RF1S60P03SM RF1S60P03SM9A RFG60P03 TB334
Contextual Info: RFG60P03, RFP60P03, RF1S60P03SM Data Sheet January 2002 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs Features • 60A, 30V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

Contextual Info: P *3 3 S RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 60A, 30V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti­

60p03

Abstract: PLIC
Contextual Info: f jì RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM HARRIS S E M I C O N D U C T O R 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages • 60A, 30V JE DEC S TYLE TO -247 SOURCE ’ rDS ON = 0.027S2 DRAIN • Temperature Compensating PSPICE Model

F1S60P03

Abstract: RF1S60P03 RF1S60P03SM RFG60P03 RFP60P03 RS-380
Contextual Info: RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM S E M I C O N D U C T O R 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages • 60A, 30V JEDEC STYLE TO-247 SOURCE DRAIN GATE • rDS ON = 0.027Ω • Temperature Compensating PSPICE Model

F1S60P03

Abstract: f1s60 RF1S60P03 RF1S60P03SM RFG60P03 RFP60P03 TB334
Contextual Info: [ /Title RFG60 P03, RFP60P 03, RF1S60 P03, RF1S60 P03SM /Subject (60A, 30V, RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM Semiconductor 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 60A, 30V These P-Channel power MOSFETs are manufactured using

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

Contextual Info: in te rrii RFG60P03, RFP60P03, RF1S60P03SM D a la S h e e t J u ly 1 9 9 9 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs F ile N u m b e r 3 9 5 1 .3 Features • 60A, 30V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature

f1s60

Contextual Info: RFG60P03, RFP60P03, RF1S60P03SM Data Sheet Title FG6 03, P60 3, 1S6 03S bt A, V, 27 m, anwer OSTs utho eyrds ter- July 1999 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs Features These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature