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    TA17464 Search Results

    TA17464 Datasheets Context Search

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    irfp360

    Contextual Info: IRFP360 S e m iconductor Data Sheet July 1999 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field


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    irfp360o-247d4-345 PDF

    Contextual Info: IRFP360, IRFP362 HARRIS S E M I C O N D U C T O R 20A and 23A, 400V, 0.2 and 0.25 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 20A and 23A, 400V These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the


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    irfp360irfp36225capacitance PDF

    irfp360

    Contextual Info: IRFP360, IRFP362 fÇ j HARRIS S E M I C O N D U C T O R 20A and 23A, 400V, 0.2 and 0.25 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 20A and 23A, 400V These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the


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    irfp360irfp362ta17464 PDF

    IRFP360

    Abstract: TB334
    Contextual Info: IRFP360 Data Sheet January 2002 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field


    Original
    irfp360o-247tb334 PDF

    irfp360

    Abstract: TB334
    Contextual Info: IRFP360 Data Sheet July 1999 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field


    Original
    irfp360o-247tb334 PDF

    BT 13A

    Abstract: IRFP360
    Contextual Info: IRFP360 Data Sheet Title FP3 bt A, 0V, 00 m, an- 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET Features This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are


    Original
    irfp360ta17464bt 13a PDF

    IRFP360

    Abstract: IRFP362
    Contextual Info: IRFP360, IRFP362 S E M I C O N D U C T O R 20A and 23A, 400V, 0.2 and 0.25 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 20A and 23A, 400V These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the


    Original
    irfp360irfp362ta17464 PDF