TA09534 Search Results

Contextual Info: RFP8N20L interdi Da ta S h e e t J u l y 1999 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET Features Formerly developmental type TA09534. PACKAGE T O -2 2 0 A B • rDS ON = 0 .6 0 0 0 • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS,

AN7254

Abstract: AN7260 RFP8N20L TB334
Contextual Info: RFP8N20L Data Sheet Title FP8 0L bt A, 0V, 00 m, gic vel, Cha el wer OST) utho July 1999 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic

AN7254

Abstract: AN7260 RFP8N20L TB334
Contextual Info: RFP8N20L Data Sheet July 1999 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 8A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as

AN7254

Abstract: AN7260 RFP8N20L TB334
Contextual Info: RFP8N20L Data Sheet January 2002 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET Features • 8A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as

Contextual Info: RFP8N20L Semiconductor April 1999 Data Sheet 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET • 8A, 200V RFP8N20L PACKAGE TO -220AB • rDS ON = 0.600i2 • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits