RFL1N10L
Abstract: AN7254 AN7260
Contextual Info: RFL1N10L 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET August 1999 Features Description • 1A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level 5V driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special
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RFL1N10
Contextual Info: Hormis S RFL1N08L, RFL1N10L S e m ico n d ucto r 7 1A, 80V and 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 1A, 80V and 100V RFL1N08L TO -205AF RFL1N08L These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use
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rfl1n08lrfl1n10lta09524an7254+2an7260rfl1n10
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RFL1N10L
Abstract: AN7254 AN7260
Contextual Info: RFL1N10L 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET September 1998 Features Description • 1A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level 5V driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special
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rfl1n10lo-205afan7254an7260 |
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