TA09196 Search Results

Contextual Info: y *“ * RFL1N12, RFL1N15 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Description Features 1A, 120V and 150V Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

AN7254

Abstract: AN7260 RFP2N12 RFP2N15 TB334
Contextual Info: [ /Title RFP2N 12, RFP2N1 5 /Subject (2A, 120V and 150V, 1.75 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO220AB) /Creator () /DOCIN FO pdfmark RFP2N12, RFP2N15 Semiconductor 2A, 120V and 150V, 1.750 Ohm,

Contextual Info: RFL1N12, RFL1N15 HARRIS S E M I C O N D U C T O R 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1 A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

Contextual Info: RFL1N12, RFL1N15 S E M I C O N D U C T O R 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

RFL1N15

Abstract: AN7254 AN7260 RFL1N12 TB334
Contextual Info: RFL1N12, RFL1N15 Semiconductor 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

Contextual Info: W vys s' RFP2N12, RFP2N15 Semiconductor 7 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 2A, 120V and 150V These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such