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Catalog Datasheet	Type	Document Tags	PDF
RFP6P08 Abstract: RFP6P10 RFP8P10 TB334 RFP8P08 Contextual Info: RFP6P08, RFP6P10 Data Sheet October 1999 -6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs • -6A, -80V and -100V Formerly developmental type TA09046. • rDS ON = 0.600Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics	Original	rfp6p08 rfp6p10 -100v ta09046 +3tb334 rfp8p10 rfp8p08	PDF
Contextual Info: RFM6P08, RFM6P10, RFP6P08, RFP6P10 -6A, -80V and -100V, 0.6 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -6A,-80V and-100V These are P-Channel enhancem ent mode silicon gate power field effect transistors designed for high speed appli	OCR Scan	rfm6p08 rfm6p10 rfp6p08 rfp6p10 +6-100v and-100v ta09046 tb334 an7254 an7260	PDF

Catalog Datasheet

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RFP6P08

Abstract: RFP6P10 RFP8P10 TB334 RFP8P08
Contextual Info: RFP6P08, RFP6P10 Data Sheet October 1999 -6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs • -6A, -80V and -100V Formerly developmental type TA09046. • rDS ON = 0.600Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

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rfp6p08 rfp6p10 -100v ta09046 +3

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Contextual Info: RFM6P08, RFM6P10, RFP6P08, RFP6P10 -6A, -80V and -100V, 0.6 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -6A,-80V and-100V These are P-Channel enhancem ent mode silicon gate power field effect transistors designed for high speed appli

OCR Scan

rfm6p08 rfm6p10 rfp6p08 rfp6p10 +6

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