TA 8754 Search Results

2092A

Abstract: 2SJ195
Contextual Info: Ordering number: EN3768A _ 2SJ195 N0.3768A P-Channel MOS Silicon FET Very High-Speed Switching Applications Features • Low ON resistance. • Very high-speed switching. •Low-voltage drive. Absolute Maximum Ratings at Ta=25°C Drain to Source Voltage

EN3767

Abstract: 2SJ194
Contextual Info: Ordering number:EN37 67 _ 2SJ194 No.3767 P-Channel MOS Silicon FET Very High-Speed Switching Applications Featu res •Low ON resistance. •Very high-speed switching. •Low-voltage drive. i solute Maximum R atings at Ta —25°C Drain to Source Voltage

2SJ191

Contextual Info: 2SJ191 2083A LD L o w D rive Series V Dss = 6 0 V 2092A P Channel Power MOSFET 3764A Features • Low ON resistance •Very high-speed switching • Low-voltage drive Absolute Maximum Ratings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage

2092A

Contextual Info: 2SJ192 2083A LD L o w D rive S eries V Dss=60V 2092A P Channel Power M OSFET Features • Low ON resistance. • Very high-speed switching. •Low-voltage drive. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage

3773A

Abstract: 2SK1472
Contextual Info: Ordering number: E N 3 7 7 3 A 2SK1472 N0.3773A N-Channel MOS Silicon FET Very High-Speed Switching Applications i F eatu res - Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b solu te M axim um R atin gs at Ta = 25°C Drain to Source Voltage

2SK1471

Contextual Info: Ordering num ber: E N 3 77 2A _ 2SK1471 N0.3772A N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s •Low ON resistance. • Very high-speed switching. ■Low-voltage drive. b s o lu te M ax im u m R a tin g s a t Ta —25°C

Contextual Info: 2SJ194 _ 2 0 9 2 A_ ^ LD L o w D riv e S e rie s V d s s = 1 0 0 V P Channel Power M OSFET 13767 F eatures - Low ON resistance. •Very high-speed switching. • Low-voltage drive. isolute M axim um R atings at Ta = 25°C Drain to Source Voltage

diode sy 710

Abstract: sy 710 diode 2SJ192
Contextual Info: 2SJ192 2083A 2092A LD L o w D riv e S e rie s V qSs = 6 0 V P Channel Power MOSFET 3765 Features • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M aximum R atings at Ta = 25°C Drain to Source Voltage VDSS Gate to Source Voltage

1J23 fet

Abstract: 2SJ192 EN3765
Contextual Info: Ordering number: EN3765 _ 2SJ192 No.3765 P-Channel MOS Silicon FET SA IVO i Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. - Very high-speed switching. • Low-voltage drive. A b s o lu te M axim um R a tin g s a t Ta = 25°C

bd7s

Abstract: 2SK1471 2083A 0d13
Contextual Info: 2SK1471 2083A LD L o w D rive S eries V Dss = 6 0 V 2092A N Channel Power MOSFET 3772A Features • Low ON resistance. • Very high-speed switching. •Low-voltage drive. b solute M axim um R atings at Ta = 25°C Drain to Source Voltage V DSS Gate to Source Voltage

mosfet 3767

Abstract: 2SJ194 2092A
Contextual Info: 2SJ194 2083A LD L o w D rive Series V Ds s = 1 0 0 V 2092A P Channel Power MOSFET 3767 Features • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute Maximum R atings at Ta = 25°C Drain to Source Voltage Vd ss Gate to Source Voltage

37751

Abstract: 2092A
Contextual Info: 2SK1474 2083A LD L o w D riv e S e rie s 2092A V Ds s — 100V N Channel Power MOSFET .T 3 7 7 5 A F eatures • Low ON resistance. •Very high-speed switching. • Low-voltage drive. A b solu te M axim um R atings at Ta = 25°C Drain to Source Voltage

2SJ195

Contextual Info: 2SJ195 2083a 2092 A LD L o w D rive S eries V DSS = 1 0 0 V P Channel Power M OSFET 1)3768 F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage

thermal fuse 115

Contextual Info: Data Sheet • Electronic 1-phase Switch-mode power supplies c o n n e c t P o w e r I N S TA P O W E R CP SNT 24 W CP SNT 25 W CP SNT 48 W NEW Power supplies for DIN-rail mounting • Output voltage adjustable via potentiometer • Wide-range input: 85…264 VAC /

2SK1474

Abstract: 3775A M19-6
Contextual Info: 2SK1474 LD Low Drive Series V Ds s = 1 0 0 V 2 Q83 A_ 2092 A N Channel Power MOSFET 3775A F e a tu re s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. bso iu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage

Contextual Info: 2SJ189 • ♦ 2083A 2092A LD L o w D riv e S e rie s V DSs= 3 0 V P Channel Power M OSFET 3762A F e a tu re s •Low ON resistance • Very high-speed switching • Low-voltage drive A b so lu te M axim um R a tin g s at Ta = 25°C Drain to Source Voltage

d3s diode

Abstract: DIODE d3s 2092A
Contextual Info: 2SK1471 LD L o w D rive S eries V D3s = 6 0 V 2083 A2092A N Channel Power M OSFET E 3772A F e a tu re s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage

Contextual Info: 2SJ195 2083A 2092A LD L o w D rive Series VDs s = 1 0 0 V P Channel Power MOSFET 3768 F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atin g s at Ta=25°C Drain to Source Voltage V d ss Gate to Source Voltage

2092A

Contextual Info: 20 83A LD L o w D rive S eries V Dss = 6 0 V 2092A P Channel Power M OSFET \E 3 7 6 4 A F e a tu re s •Low ON resistance ■Very high-speed switching • Low-voltage drive A bsolute M axim um R atin g s at Ta = 25°C D rain to Source Voltage V d ss Gate to Source Voltage

87541

Abstract: 2SJ190 2062a ITR00029 ITR00030 ITR00032 ITR00033 ITR01031
Contextual Info: 注文コード No.N 3 7 6 3 2SJ190 No. 3 7 6 3 51899 新 2SJ190 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃

2SJ193

Abstract: 2062a ITR00057 ITR00058 ITR00059 ITR00060 ITR00061 ITR00062 37662
Contextual Info: 注文コード No.N 3 7 6 6 2SJ193 No. 3 7 6 6 51899 2SJ193 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃

54AC00

Abstract: 54ACT00 AC00
Contextual Info: 54AC00 • 54ACT00 Quad 2-Input NAND Gate General Description The ’AC/’ACT00 contains four 2-input NAND gates. Features n Outputs source/sink 24 mA n ’ACT00 has TTL-compatible inputs n Standard Microcircuit Drawing SMD — ’AC00: 5962-87549 — ’ACT00: 5962-87699

54AC00

Abstract: 54ACT00 AC00 act00
Contextual Info: 54AC00 • 54ACT00 Quad 2-Input NAND Gate General Description The ’AC/’ACT00 contains four 2-input NAND gates. Features n Outputs source/sink 24 mA n ’ACT00 has TTL-compatible inputs n Standard Microcircuit Drawing SMD — ’AC00: 5962-87549 — ’ACT00: 5962-87699

54ACT00

Abstract: 54AC00 54ACT 74AC AC00
Contextual Info: 54AC00/54ACT00 Quad 2-Input NAND Gate General Description The ’AC/’ACT00 contains four 2-input NAND gates. Features n Standard Microcircuit Drawing SMD — ’AC00: 5962-87549 — ’ACT00: 5962-87699 n 54AC00 now qualified to 300Krad RHA designation,