TA 8135 Search Results

IM6312

Abstract: IM6100 intersil im6100 IM6312A 6210s 6210A dx61
Contextual Info: IM 6312 CMOS ROM 1 0 2 4 Word x 12 Bit u n ie m FEATURES GENERAL DESCRIPTION • IM 6100 com patible The IM6312 is a h ig h speed low p o w e r s ilic o n ga te CMOS s ta tic ROM organize d 1024 w o rd s by 12 b its . In a il s ta tic s ta te s it e x h ib its th e m ic ro w a tt po w e r re q u ire m e n ts ty p ic a l

multiplexers 74 LS 150

Contextual Info: S E M IC O N D U C T O R tm DM74LS157/DM74LS158 Quad 2-Line to 1-Line Data Selectors/Multiplexers General Description • S o u rc e p ro g ra m m a b le c o u n te rs T h e s e d a ta s e le c to rs /m u ltip le x e rs c o n ta in in v e rte rs a n d d riv ­

Contextual Info: SVC707 SVC707 Ordering number : ENA0158 Silicon Diffused Junction Type FM Receiver Electronic Tuning Applications Features • • High capacitance ratio. Low voltage drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings

Contextual Info: ECH8616 Ordering number : ENN8191 N-Channel Silicon MOSFET ECH8616 General-Purpose Switching Device Applications Features • • • Ultrahigh-speed switching. 4V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: FW232A Ordering number : ENN8361 N-Channel Silicon MOSFET FW232A General-Purpose Switching Device Applications Features • • 2.5V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage

Contextual Info: 3LN04CH Ordering number : ENA1193 N-Channel Silicon MOSFET 3LN04CH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current DC

lm8271

Contextual Info: June 2005 LMP8271 High Common Mode, Gain of 20, Bidirectional Precision Voltage Difference Amplifier General Description Features The LMP 8271 is a fixed gain differential amplifier with a Typical Values, TA = 25˚C n Bidirectional current sense capability

Contextual Info: MCH3315 Ordering number : ENN8030 P-Channel Silicon MOSFET MCH3315 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage

Contextual Info: MCH3421 MCH3421 Ordering number : ENN7997 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage

Contextual Info: MCH3316 Ordering number : ENN8019 P-Channel Silicon MOSFET MCH3316 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage

Contextual Info: MCH3322 MCH3322 Ordering number : ENN7994 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage

Contextual Info: MCH3427 MCH3427 Ordering number : ENN7746 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage

65B4

Contextual Info: A I R C H I I - D E M IC O N D U C T O R T 74F552 Octal Registered Transceiver with Parity and Flags General Description Features T h e ’ F 5 5 2 o c ta l tra n s c e iv e r c o n ta in s tw o 8 -b it re g is te rs fo r • 8 -B it b id ire c tio n a l I/O P o rt w ith h a n d s h a k e

2SC4081RT1

Abstract: SMD310
Contextual Info: 2SC4081RT1 General Purpose Amplifier Transistor NPN Surface Mount • Moisture Sensitivity Level: 1 • ESD Rating: TBD http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage

BAW62

Abstract: DA121TT1G SC-75
Contextual Info: DA121TT1G Silicon Switching Diode Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS TA = 25C Rating Symbol Max Unit Continuous Reverse Voltage VR 80 V Recurrent Peak Forward Current

BAS16WT1G

Abstract: BAW62
Contextual Info: BAS16WT1G Silicon Switching Diode Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 3 CATHODE MAXIMUM RATINGS TA = 25C Symbol Value Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current

Contextual Info: SVC704 SVC704 Ordering number : EN8997 Silicon Diffused Junction Type Varactor Diode Varactor Diode for AFC, VCO Features • • • High capacitance ratio VR=1.0 to 7.0V . Small-sized package. Low series resistance. Specifications Absolute Maximum Ratings at Ta=25°C

BAS16DXV6T1

Abstract: BAS16DXV6T5 BAW62
Contextual Info: BAS16DXV6T1, BAS16DXV6T5 Preferred Device Dual Switching Diode MAXIMUM RATINGS TA = 25°C Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms Symbol Max Unit VR 75 V IF 200 mA IFM(surge) 500 mA

EFC4615R

Abstract: MARKING 146
Contextual Info: Ordering number : ENA1629 ON Semiconductor DATA SHEET N-Channel Silicon MOSFET EFC4615R General-Purpose Switching Device Applications Features • • • 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Specifications Absolute Maximum Ratings at Ta=25°C

BAV70

Abstract: BAV70TT1G
Contextual Info: BAV70TT1G Dual Switching Diode Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS TA = 25C Rating Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500

54ACT112

Abstract: ACT112 E20A J16A
Contextual Info: S e p te m b e r 1 9 9 8 54 ACT 112 Dual JK Negative Edge-Triggered Flip-Flop General Description A s y n c h ro n o u s Inputs: T h e ’A C T 1 1 2 c o n ta in s tw o in d e p e n d e n t, h ig h -s p e e d J K flip -flo p s w ith D ire c t S e t a n d C le a r in p u ts . S y n c h ro n o u s s ta te

BAW56WT1G

Contextual Info: BAW56WT1G Dual Switching Diode, Common Anode Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant CATHODE 1 ANODE 3 2 CATHODE MAXIMUM RATINGS TA = 25C Rating Symbol Max Unit Reverse Voltage VR 70 V Forward Current

BAV70

Abstract: BAV70WT1G BAV70 ON
Contextual Info: BAV70WT1G Dual Switching Diode Common Cathode Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant MAXIMUM RATINGS TA = 25C Rating Symbol Max Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge)

LM8270

Contextual Info: June 2005 LMP8270 High Common Mode, Gain of 20, Precision Voltage Difference Amplifier General Description Features The LMP 8270 is a fixed gain differential amplifier with a Typical Values, TA = 25˚C n Input offset voltage 1 mV max n TCVos 15 µV/˚C max