T72V2 Search Results
T72V2 Price and Stock
SICK AG MZT7-2V2NS-KU0Cylinder Sensor, T-Type, Npn-No, 3Mm; |Sick MZT7-2V2NS-KU0 |
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MZT7-2V2NS-KU0 | Bulk | 1 |
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SICK AG MZT7-2V2PS-KW0Cylinder Sensor, T-Type, Pnp-No, 3Mm; |Sick MZT7-2V2PS-KW0 |
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SICK AG MZT7-2V2NO-KU0Cylinder Sensor, T-Type, Npn-Nc, 3Mm; |Sick MZT7-2V2NO-KU0 |
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Integrated Device Technology Inc IDT72V255LA10TF |
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IDT72V255LA10TF | 1,686 |
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Integrated Device Technology Inc IDT72V2103L7-5PF |
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IDT72V2103L7-5PF | 1,385 | 1 |
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T72V2 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
72V215Contextual Info: 3.3 VOLT CMOS SyncFlFO 1a in i fi 2 5 6 x 1 8 , 5 1 2 x 1 8 ,1 ,0 2 4 x 1 8 , ! d t72V2 ? 5 2 ,0 4 8 x 1 8 a n d 4 ,0 9 6 x 1 8 ’ ’ ID T 7 2 V 2 2 5 ID T 7 2 V 2 3 5 ID T 7 2 V 2 4 5 5VÍE Technology, lie. FEATURES: • • • • • • • • • |
OCR Scan |
t72v218-bitidt72v205idt72v215+3 | |
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Contextual Info: 3.3 VOLT CMOS SUPERSYNC FIFO 16,384x9 32,768 x 9 J d t PRELIMINARY T72V261 LA T72V271 LA Integrated Device Technology, Inc. FEATURES: • C hoose among the following m em ory organizations: T72V261 LA 1 6 ,3 8 4 x 9 T72V271 LA 3 2 ,7 6 8 x 9 • P in -c o m p a tib le w ith th e ID T 7 2 V 2 8 1 /7 2 V 2 9 1 and |
OCR Scan |
384x9idt72v261idt72v271t72v2101/72v2111+4 | |
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Contextual Info: PRELIMINARY T72V275 T72V285 3.3 VOLT CMOS SUPERSYNC FIFO 32,768 X 18 65,536 X 18 FEATURES: • Choose among the following memory organizations: T72V275 32,768x18 T72V285 65,536x18 • Pin-compatible with the T72V255/72V265 SuperSync FIFOs • 10ns read/write cycle time 6.5ns access time |
OCR Scan |
idt72v275idt72v285768x18536x18+4 | |
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Contextual Info: 3.3 VOLT CMOS SUPERSYNC FIFO 16,384x9, 32,768x9 T72V261 T72V271 In teg ra ted D e v ic e T e c h n o lo g y , l i e . FEATURES: • 3.3 Volt operation saves 60 percent of power compared to the functionally compatible 5 Volt IDT72261/72271 family 16,384 x 9-bit storage capacity T72V261 |
OCR Scan |
384x9768x9idt72v261idt72v271+1 | |
M7811
Abstract: 72V251
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OCR Scan |
idt72v201idt72v211idt72v221idt72v231+7 | |
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Contextual Info: 3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 8 ,19 2x 1 8/1 6,38 4x 9 16,384 x 18/32,768x9 3 2,7 68 x 18 /65 ,5 36 x9 65,5 36x18/131,072x9 131,072x18/262,144x9 262.144x18/524.288x9 I v te g ia te d D e v i e T e c h n o lo g y , l i e . FEATURES: |
OCR Scan |
768x936x18/131072x9072x18/262+6 | |
JR 3610Contextual Info: 3.3 VOLT VARIABLE WIDTH SUPERSYNC FIFO 8,192 x 18 or 16,384x9 16,384x18 or 32,7 68 x 9 32,7 68 x 18 or 65,5 36 x 9 65,5 36 x 18 or 131,072x9 131,072 x 18 or 262,144x9 262,144 x 18 or 524,288 x 9 FEATURES: • Choose among the following memory organizations: |
OCR Scan |
384x9384x18072x9144x9+7 | |
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Contextual Info: CMOS SUPERSYNC FIFO 16,384x9, 32,768x9 T72V261 T72V271 Integrated D ev ice TechnoJogy, S c . FEATURES: • 3.3 Volt operation saves 60 percent of power compared to the functionally compatible 5 Volt IDT72261/72271 family 16,384 x 9-bit storage capacity T72V261 |
OCR Scan |
384x9768x9idt72v261idt72v271+4 | |
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Contextual Info: 3.3 VO LT HIGH D ENSITY CM O S S U P ER SY N C FIFO 131,072 x 18 2 6 2 ,1 4 4 x 1 8 PR ELIM IN A R Y T72V295 T72V2105 Integrated Device Technology, Inc. FEATURES: • Choose among the following memory organizations: T72V295 131,072x 18 T72V2105 |
OCR Scan |
idt72v295idt72v2105t72v255/72v265idt72v275/72v285+2 | |
aa1413
Abstract: AA1716
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OCR Scan |
idt72v264idt72v274idt72v284idt72v294+4 | |
AA1716
Abstract: 72284
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OCR Scan |
idt72v264idt72v274idt72v284idt72v294+4 | |
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Contextual Info: 3.3 VOLT CMOS SUPERSYNC FIFO 16,384x9, 32,768x9 T72V261 T72V271 Ivtegiated D evice Technology, l i e . FEATURES: • 3.3 Volt operation saves 60 percent of power compared to the functionally compatible 5 Volt IDT72261/72271 family 16,384 x 9-bit storage capacity T72V261 |
OCR Scan |
384x9768x9idt72v261idt72v271+2 | |
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Contextual Info: 3.3 VOLT CMOS SUPERSYNC FIFO 8,192x18 16,384x18 FEATURES: • C hoose among the following m em ory organizations: T72V255LA 8 ,1 9 2 x 1 8 T72V265LA 1 6 ,3 8 4 x 1 8 • Pin-com patiblewiththe T72V275/72V285and T72V295/ 72V2105 SuperSync FIFOs • Functionally com patible with the 5 Volt IDT72255/72265 |
OCR Scan |
192x18384x18idt72v255laidt72v265la+6 | |
AA1716Contextual Info: 3.3 V O L T V A R IA B L E WIDTH S U P E R S Y N C FIFO 8,192 x 18 or 16,384 x 9 16,384 x 18 or 32,768 x 9 32,768 x 18 or 65,536 x 9 65,536 x 18 or 13 1,072 x 9 131,072 x 18 or 262,144 x 9 262,144 x 18 or 524,288 x 9 FE ATURES: • Choose among the following memory organizations: |
OCR Scan |
idt72v21idt72v264idt72v274idt72v284+7 | |
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Contextual Info: 3.3 VOLT CMOS SUPERSYNC FIFO 8 ,1 9 2 x 1 8 ,1 6 ,3 8 4 x 1 8 T72V255 T72V265 Integrated Device Technology, Inc. DESCRIPTION: FEATURES: • 3.3 Volt operation saves 60 percent power compared to the functionally compatible 5 Volt IDT72255/65 Family • 8,192 x 18-bit storage capacity T72V255 |
OCR Scan |
192x18384x18idt72v255idt72v265+3 | |
Lr d14Contextual Info: 3.3 VOLT CMOS SUPERSYNC FIFO 8 ,1 9 2 x 1 8 ,1 6 ,3 8 4 x 1 8 T72V255 T72V265 In teg ra ted D e v ic e T ec h n o J o g y , S c . DESCRIPTION: FEATURES: • 3.3 Volt operation saves 60 percent power compared to the functionally compatible 5 Volt IDT72255/65 Family |
OCR Scan |
192x18384x18idt72v255idt72v265+4 | |
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Contextual Info: 3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 8,192 x 18/16,384x9 16,384 x 18/32,768x9 32,768 x 18/65,536x9 65,536x 18/131,072x9 131,072 x 18/262,144x9 262.144 x 18/524.288x9 Integrated Device Technology, Inc. FEATURES: PRELIMINARY T72V263 T72V273 |
OCR Scan |
384x9768x9536x9072x9+6 | |
72V273Contextual Info: 3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 8 ,1 9 2 x 1 8 /1 6 ,3 8 4 x 9 16,384 X 18/32,768x9 3 2,7 68 x 18 /65 ,5 36 x9 65,5 36 x 18 /13 1,07 2x 9 131,072x18/262,144x9 262.144x18/524.288x9 In teg rated D evice Technology, Inc. FEATURES: • Choose among the following memory organizations: |
OCR Scan |
768x9072x18/262144x9144x18/524+7 | |
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Contextual Info: 3.3 VOLT CMOS SUPERSYNC FIFO 8 ,1 92x18,16,384x18 FEATURES: • 3.3 Volt operation saves 60 percent power compared to the functionally compatible 5 Volt 72255/65 Family • 8,192 x 18-bit storage capacity T72V255 • 16,384 x 18-bit storage capacity (T72V265) |
OCR Scan |
92x18384x1818-bitidt72v255+4 | |
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Contextual Info: 3.3 VOLT CMOS SyncFlFO 256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18 My ’ ’ Integrated D<ïvice Technology, Inc. FEATURES: • • • • • • • • • • • • • • • • • 256 x 18-bit organization array T72V205 512 x 18-bit organization array (T72V215) |
OCR Scan |
18-bitidt72v205idt72v215idt72v225+2 | |
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Contextual Info: Integrated Device Technology, Inc. 3.3 VOLT CMOS DUAL SyncFlFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18 and DUAL 4 ,0 9 6 x 1 8 FEATURES: • The IDT72V805 is equivalent to two T72V205 256 x 18 FIFOs • The IDT72V815 is equivalent to two T72V215 512 x 18 FIFOs |
OCR Scan |
idt72v805idt72v205idt72v815idt72v215+6 | |
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Contextual Info: 3.3 VOLT CMOS SUPERSYNC FIFO 32,768x18 65,536 x 18 PRELIMINARY T72V275 T72V285 Integrated Device Technology, Inc. FEATURES: • Choose among the following memory organizations: T72V275 3 2 ,7 6 8 x 1 8 T72V285 6 5 ,5 3 6 x 1 8 • Pin-compatible with the T72V255/72V265 SuperSync |
OCR Scan |
768x18idt72v275idt72v285idt72v255/72v265+4 | |
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Contextual Info: T72V255 T72V265 3.3 VOLT CMOS SUPERSYNC FIFO 8 ,1 9 2 x 1 8 ,1 6 ,3 8 4 x 1 8 I r te g ía te d D e v i e T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • 3.3 Volt operation saves 60 percent power compared to the functionally compatible 5 Volt IDT72255/65 Family |
OCR Scan |
idt72v255idt72v265idt72255/6518-bit+1 | |
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Contextual Info: 3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 8 ,1 9 2 x 1 8 /1 6 ,3 8 4 x 9 16,384 x 1 8 /3 2 ,7 6 8 x 9 3 2 ,7 6 8 x 1 8 /6 5 ,5 3 6 x 9 6 5 ,5 3 6 x 1 8 /1 3 1 ,0 7 2 x 9 1 3 1 ,0 7 2 x 1 8 /2 6 2 ,1 4 4 x 9 2 6 2 .1 4 4 x 1 8 /5 2 4 .2 8 8 x 9 |
OCR Scan |
idt72v263idt72v273idt72v283idt72v293+2 | |