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    T6P10E

    Abstract: nh TRANSISTOR MTD6P10ET4G P10EG AN569 MTD6P10E MTD6P10EG MTD6P10ET4
    Contextual Info: MTD6P10E Preferred Device Power MOSFET 6 Amps, 100 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


    Original     		mtd6p10emtd6p10e/dt6p10enh transistor+5mtd6p10et4gp10egan569mtd6p10egmtd6p10et4 PDF

    T6P10E

    Abstract: MTD6P10ET4G
    Contextual Info: MTD6P10E Preferred Device Power MOSFET 6 Amps, 100 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


    Original     		mtd6p10emtd6p10e/dt6p10emtd6p10et4g PDF