T6N 600 Search Results

T6N 600

Abstract: T3N/400T
Contextual Info: •SABJ g : F - 3 3 _ T O - f j +_ T O - 1 2 6 ±TAVM TYPE • T ra Ar - a T IN T IN T IN TIN TIN TIN T j M= 1 2 S ° C 05 1 2 4 6 B i 2t= 0 .5 A 2a 50 100 200 400 600 800 1 X I dv VTM * I TM ! d t I min. _1SI_ SAi_ ; V/us

SMD M05 sot23

Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
Contextual Info: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly

SMD transistor M05

Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
Contextual Info: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8240T6N SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The μPC8240T6N is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the

T6N 600

Abstract: PC8236T6N HS350
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC8236T6N SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The μPC8236T6N is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the

T6N 600

Abstract: NEC 575 PC8236T6N HS350 NEC 574
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8236T6N SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The μPC8236T6N is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the

T6N 600

Abstract: HS350
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC8240T6N SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The μPC8240T6N is a silicon germanium carbon SiGe:C monolithic integrated circuit low noise amplifier for GPS. This device exhibits low noise figure and high gain characteristics, to improve the sensitivity of GPS receivers.

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

T6N 600

Abstract: HS350 PC8236T6N PC8236T6N-E2-A PC8236T6N-E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PD5740T6N

Contextual Info: DATA SHEET SiGe BiCMOS INTEGRATED CIRCUIT PD5740T6N LOW NOISE WIDEBAND AMPLIFIER IC WITH THROUGH FUNCTION DESCRIPTION The μPD5740T6N is a low noise wideband amplifier IC mainly designed for the portable digital TV application. This IC has achieved low noise figure and the wideband operation. The μPD5740T6N has an LNA pass-through

T6N 600

Abstract: HS350 PC8240T6N-E2-A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: A Business Partner of Renesas Electronics Corporation. PD5756T6N Data Sheet SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function R09DS0026EJ0100 Rev.1.00 Oct 04, 2011 DESCRIPTION The μPD5756T6N is a low noise wideband amplifier IC with the through function mainly designed for the digital TV

marking C3U

Abstract: 24-70MHZ T6N 600 HS350
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

HS350

Abstract: PC8240T6N-E2
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: Data Sheet PD5756T6N SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function R09DS0026EJ0100 Rev.1.00 Oct 04, 2011 DESCRIPTION The μPD5756T6N is a low noise wideband amplifier IC with the through function mainly designed for the digital TV

Contextual Info: Data Sheet PD5756T6N SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function R09DS0026EJ0100 Rev.1.00 Oct 04, 2011 DESCRIPTION The μPD5756T6N is a low noise wideband amplifier IC with the through function mainly designed for the digital TV

Contextual Info: 22 ChipInductors-1008HTSeries 2520 T h e s e lo w p ro file in d u c to rs a re 4 0 % th in n e r th a n o u r c o n v e n tio n a l 1 0 0 8 b o d y s iz e s . T h e y fe a tu re s ta n d a rd in d u c ta n c e to le ra n c e s o f 5 -1 0 % , h ig h S R F s a n d v e ry h ig h Q.

20ii2

Abstract: s20n
Contextual Info: Ordering number : EN1877C Silicon Planar Type DTC8-N ISAMYOj 8A Bidirectional Thyristor Features n>$v * Peak O FF-siate voltage : 20 0 lo 6 0 0 V # • R M S O N -state current ; 8A ♦ T O - 22 0 package. Absolute Maximum Ratings ai T a = 2 5 ° c :c - n

IIP32

Abstract: PD5740T6N HS350 2LNA
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

MT47H16M16FG

Contextual Info: PRELIMINARY‡ 256Mb: x4, x8, x16 DDR2 SDRAM DDR2 SDRAM MT47H64M4 – 16 MEG x 4 x 4 BANKS MT47H32M8 – 8 MEG x 8 x 4 BANKS MT47H16M16 – 4 MEG x 16 x 4 BANKS For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/datasheets

T6N 600

Abstract: 1GB DDR2 4 banks 256M4 DDR2-400 DDR2-533 MT47H64M16
Contextual Info: PRELIMINARY‡ 1Gb: x4, x8, x16 DDR2 SDRAM DDR2 SDRAM MT47H256M4 – 32 MEG X 4 X 8 BANKS MT47H128M8 – 16 MEG X 8 X 8 BANKS MT47H64M16 – 8 MEG X 16 X 8 BANKS For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/datasheets

512MbDDR2LOF

Abstract: DDR2 SDRAM Meg x 5 x 8 banks T6N 600 WR1 marking code DDR2-400 DDR2-533 MT47H32M16 MT47H64M8 TT300
Contextual Info: PRELIMINARY‡ 512Mb: x4, x8, x16 DDR2 SDRAM DDR2 SDRAM MT47H128M4 – 32 MEG X 4 X 4 BANKS MT47H64M8 – 16 MEG X 8 X 4 BANKS MT47H32M16 – 8 MEG X 16 X 4 BANKS For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/datasheets

MA-006

Abstract: KST6N/16 ABE 027 T6N 600 Multi-Contact AG S6NB
Contextual Info: Multi-Contact Sicherheits-Buchsen und Stecker Safety sockets and plugs Douilles de sécurité et broches Sicherheits-Buchsen KBT6AR-N/.-S Safety sockets KBT6AR-N/.-S Douilles de sécurité KBT6AR-N/.-S mit Arretierung und Crimpanschluss with snap-in lock and crimp connection