TAA2009
Abstract: TRIPATH EB-TAA2009 rca jacks footprint TRIPATH TECHNOLOGY Tripath Amplifier RC0603JR-0710KL 5015KCT-ND CLASS-T DIGITAL AUDIO AMPLIFIER LED 0805 green
Contextual Info: Tri pat h Tec hnol og y, I nc. - Te c hni cal I nf orm a ti on EB-TAA2009 2x9W Class-T Digital Audio Amplifier Evaluation Board using Digital Power Processing T M Technology Technical Information- board Rev. 1.7 Revision 1.0- June 2006 GENERAL DESCRIPTION
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eb-taa2009taa2009which301-1055rcj-012-smt+11rcj-013-smtj147-ndds86ctripathrca jacks footprinttripath technologytripath amplifierrc0603jr-0710kl5015kct-ndclass-t digital audio amplifierled 0805 green
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T6 P10E
Abstract: mosfet low idss AN569 MTD6P10E MTD6P10ET4 T6P10E
Contextual Info: MTD6P10E Preferred Device Power MOSFET 6 Amps, 100 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for
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mtd6p10emtd6p10e/dt6 p10emosfet low idss+3an569mtd6p10et4t6p10e
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T6 P10E
Abstract: 6P10E
Contextual Info: MTD6P10E Preferred Device Power MOSFET 6 Amps, 100 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for
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T6P10E
Abstract: MTD6P10ET4G
Contextual Info: MTD6P10E Preferred Device Power MOSFET 6 Amps, 100 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for
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T6P10E
Abstract: nh TRANSISTOR MTD6P10ET4G P10EG AN569 MTD6P10E MTD6P10EG MTD6P10ET4
Contextual Info: MTD6P10E Preferred Device Power MOSFET 6 Amps, 100 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for
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mtd6p10emtd6p10e/dt6p10enh transistor+5mtd6p10et4gp10egan569mtd6p10egmtd6p10et4
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xc-2200
Abstract: brushless motor 6236 driver RPR MAC vhdl code infineon can bootloader XC2200 EQUIVALENT EBC 6531 XC2285-56F can bootloader xe166 wdt Cerberus OCDS C166
Contextual Info: U s e r ’ s Ma n u a l , V 2 . 0 , D e c . 2 0 0 7 XC2200 Derivatives 1 6 / 3 2 - B i t S i n g l e -C h i p M i c r o c o n t r o l l e r w i t h 32-Bit Performance V o l u m e 1 o f 2 : S y s t e m U n i ts M i c r o c o n t r o l l e rs Edition 2007-12
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xc220032-bitrbuf01srhrbuf01srl+10b158-h9132-x-x-7600xc-2200brushless motor 6236 driverrpr mac vhdl codeinfineon can bootloaderequivalent ebc 6531xc2285-56fcan bootloaderxe166 wdtcerberus ocds c166
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S3FC40D
Abstract: IRR36 p64s CalmRISC-16
Contextual Info: S3CC40D/FC40D CalmRISC 16-BIT CMOS MICROCONTROLLERS USER'S MANUAL Revision 1 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or
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s3cc40d/fc40d16-bits3fc40dirr36+2p64scalmrisc-16
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S3FC40D
Abstract: F40D CalmRISC-16 FM24653 ISO-14001 S3FC40DJ calmRISC16 MP-65 S3CC40D JTAG-10
Contextual Info: USER'S MANUAL S3CC40D/FC40D CalmRISC 16-BIT CMOS MICROCONTROLLERS January, 2009 REV 1.20 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2009 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully
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s3cc40d/fc40d16-bits3fc40df40d+8calmrisc-16fm24653iso-14001s3fc40djcalmrisc16mp-65s3cc40djtag-10
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S3FC40DJ
Abstract: CalmRISC-16 FM24653 ISO-14001 x1110 IRR36 samsung confidential S3FC40D S3FC s3cc
Contextual Info: USER'S MANUAL S3CC40DJ/FC40DJ CalmRISC 16-BIT CMOS MICROCONTROLLERS July, 2007 REV 1.10 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2007 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully
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s3cc40dj/fc40dj16-bits3fc40djcalmrisc-16+8fm24653iso-14001x1110irr36samsung confidentials3fc40ds3fcs3cc
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xc2000 instruction set
Abstract: PEC 539 ES 61162 Diode DX2A XC2387 XC2287-XXF66L eeprom 25xxx programmer EEPROM 25xxx cm 20 mdl 12h XC2365
Contextual Info: U s e r ’ s Ma n u a l , V 1 . 0 , J u n e 2 0 0 7 XC2000 Derivatives ar y 1 6 / 3 2 - B i t S i n g l e -C h i p M i c r o c o n t r o l l e r w i t h 32-Bit Performance P re li m in V o l u m e 1 o f 2 : S y s t e m U n i ts M i c r o c o n t r o l l e rs
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xc200032-bitrbuf01srhrbuf01srl+10xc2000 instruction setpec 539es 61162diode dx2axc2387xc2287-xxf66leeprom 25xxx programmereeprom 25xxxcm 20 mdl 12hxc2365
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DIODE T3D 9D
Abstract: Diode T3D 7d P19Ab t2d 9d T2D 79 diode
Contextual Info: A dvance Inform ation This document contains information on a product under consideration. The parametric and functional information are target param eters and are for informational purposes only and are subject to change w ithout notice. Please consult Brooktree prior to designing with this part.
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bt464208-pingl464001diode t3d 9d+4diode t3d 7dp19abt2d 9dt2d 79 diode
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Contextual Info: STR720 ARM720T 16/32-BIT MCU WITH 16K RAM, USB, CAN, 3 TIMERS, ADC, 6 COMMUNICATIONS INTERFACES PRODUCT PREVIEW Memories – 16 KBytes Program RAM Memory – External SDRAM Interface for up to 128 Mbytes SDRAM. – External Memory Interface EMI for up to 8
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Alter PQFP208
Abstract: p633 PGA391 p626 CPGA391 BGA391 Str720
Contextual Info: STR720 ARM720T 16/32-BIT MCU WITH 16K RAM, USB, CAN, 3 TIMERS, ADC, 6 COMMUNICATIONS INTERFACES PRODUCT PREVIEW Memories – 16 KBytes Program RAM Memory – External SDRAM Interface for up to 128 Mbytes SDRAM. – External Memory Interface EMI for up to 8
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str720arm720t16/32-bitalter pqfp208+5p633pga391p626cpga391bga391
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