T5 8G Search Results

315-13-120-41-001

Abstract: 316-93-132-41-006 310-93-164-41-001 3160-X
Contextual Info: SINGLE-IN-LINE SOCKETS Solder Tail Single Row BrRiEElîDIB Series 310, 311 315, 316 • Series 31X single row strip sockets may be cut to any length. 1 ö !ö T5!öl .100 • Various solder tails available: standard length, long for multi­ layer boards, very low and ultra

1N3220

Contextual Info: ZE TE X IN C T5 D 95D 0 6 0 5 1 8-bit ¡xP compatible A-D converter ZN447 ZN449 D ZN448 FEATURES DESCRIPTION • Easy Interfacing to microprocessor, or operates as a 'stand-alone' converter • Fast: 9/xs conversion tim e guaranteed • Choice o f linearity: 0.3LS B - Z N 4 4 7 ,

S3086

Contextual Info: DRAW ING MADE T H IS @ IN D R A W IN G C O P Y R IG H T RESERVED. T H IR D IS 1965 AMP ANG LE P R O JE C T IO N RELEASEO U N P U B L IS H E D . SY AMP FO R P U S LIC A T IO N IN C O R P O R A T E D , H A R R IS B U R G , P R O D U C T5 M AY B E C O V E R E D

Contextual Info: Inductive proximity switches NCB1,5-8GM25-N0 Comfort series 1.5 mm embeddable 16 13 LED 25 4 M8x1 0102 NAMUR NC 1,5 mm embeddable 0 . 1,215 mm 0,22 0,19 0,65 8V 0 . 5000 Hz 1 . 10 typ. 3 % Protected against reverse polarity yes www.pepperl-fuchs.com

Contextual Info: DATA SHEET 8G bits DDR3L SDRAM, DDP EDJ8232E5MB 256M words  32 bits Specifications Features • Density: 8G bits  Organization  32M words  32 bits  8 banks  Package  136-ball FBGA  DDP: 2 pieces of 4G bits chip sealed in one package

ELPIDA DDR3

Contextual Info: DATA SHEET 8G bits DDR3 SDRAM, DDP EDJ8232B5MB 256M words  32 bits Specifications Features • Density: 8G bits  Organization  32M words  32 bits  8 banks  Package  136-ball FBGA  DDP: 2 pieces of 4G bits chip sealed in one package

EDJ8216B5MB

Abstract: E1824E
Contextual Info: PRELIMINARY DATA SHEET 8G bits DDR3L SDRAM, DDP EDJ8216E5MB 512M words x 16 bits Specifications Features • Density: 8G bits • Organization  64M words × 16 bits × 8 banks • Package  96-ball FBGA  DDP: 2 pieces of 4G bits chip sealed in one

136-BALL

Abstract: EDJ8232
Contextual Info: PRELIMINARY DATA SHEET 8G bits DDR3L SDRAM, DDP EDJ8232E5MB 256M words x 32 bits Specifications Features • Density: 8G bits • Organization  32M words × 32 bits × 8 banks • Package  136-ball FBGA  DDP: 2 pieces of 4G bits chip sealed in one

EDJ8216B5MB

Abstract: E1824E DDR3 DIMM 8G
Contextual Info: DATA SHEET 8G bits DDR3L SDRAM, DDP EDJ8216E5MB 512M words  16 bits Specifications Features • Density: 8G bits  Organization  64M words  16 bits  8 banks  Package  96-ball FBGA  DDP: 2 pieces of 4G bits chip sealed in one package

EDJ8232B5MB-DJ-F

Abstract: ELPIDA DDR3 User
Contextual Info: PRELIMINARY DATA SHEET 8G bits DDR3 SDRAM, DDP EDJ8232B5MB 256M words x 32 bits Specifications Features • Density: 8G bits • Organization  32M words × 32 bits × 8 banks • Package  136-ball FBGA  DDP: 2 pieces of 4G bits chip sealed in one

Matsushita relay 12V pc

Abstract: ARJ2003 ARJ2012 ARJ2024 ARJ204H ARJ20A03 ARJ20A03Z ARJ2203 ARJ2212 ARJ2224
Contextual Info: rj.fm 2 y [ W Q O O P N X P P œ @ ˛ j œ @ O P P S S “ RJ ARJ2 SMD RELAYS WITH 8GHz CAPABILITIES RJ-RELAYS FEATURES 9.00 .354 14.0 .551 • Excellent high frequency characteristics (50Ω, at 5GHz) V.S.W.R.: Max. 1.25 Insertion loss: Max. 0.5dB Isolation: Min. 35dB

HF relay high current rating

Abstract: rjrelays R-4737 RJ Relay ARJ2003 ARJ2012 ARJ2024 ARJ204H ARJ20A03 ARJ2203
Contextual Info: rj.fm 2 y [ W Q O O P N X P P œ @ ˛ j œ @ O P P S S “ RJ ARJ2 SMD RELAYS WITH 8GHz CAPABILITIES RJ-RELAYS FEATURES 9.00 .354 14.0 .551 • Excellent high frequency characteristics (50Ω, at 5GHz) V.S.W.R.: Max. 1.25 Insertion loss: Max. 0.5dB Isolation: Min. 35dB

em638325ts-6

Contextual Info: EtronTech EM638325 2M x 32 Synchronous DRAM SDRAM Preliminary (Rev 1.4 October/2005) Pin Assignment (Top View) Features • • • • • Clock rate: 200/183/166/143/125/100 MHz Fully synchronous operation Internal pipelined architecture Four internal banks (512K x 32bit x 4bank)

tl741

Abstract: VEL-4P32-RH-TP sodium vapor lamp Magnetek ballast F32T8 transistor ballast 1000W VEL-3P32-RH-TP 13w cfl circuit D835 transistor PHILIPS T8 MAGNETIC BALLAST
Contextual Info: Manufacturers’ Cross Reference Guide These tables are intended only as guides and may represent another lamp/ballast company's most similar product rather than an identical match. Individual manufacturer's performance values should be consulted. For a complete cross reference guide please consult our electronic

Contextual Info: Ordering information DC-DC Converters PCB Mount type SUTS3 SUT ① S ② 3 ③ 12 ④ DC OUTPUT -O ⑥ 1Series name 2Single output 3Output wattage 4Input voltage 5Output voltage 6Optional G :Capacitor between Input and Output is removed. R MODEL MAX OUTPUT WATTAGE[W]

Contextual Info: PART NUMBER: ± 2g / 4g / 6g / 8g Tri-axis Digital Accelerometer Specifications KXUD9-2050 Rev. 1 Sep-2010 Product Description The KXUD9 is a tri-axis silicon micromachined accelerometer with a user selectable full-scale output range of ±2g, ±4g, ±6g or ±8g. The

Contextual Info: PART NUMBER: ± 2g / 4g / 6g / 8g Tri-axis Digital Accelerometer Specifications KXUD9-2050 Rev. 1 Sep-2010 Product Description The KXUD9 is a tri-axis silicon micromachined accelerometer with a user selectable full-scale output range of ±2g, ±4g, ±6g or ±8g. The

ELPIDA DDR2 SDRAM

Contextual Info: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5104AJSE 128M words x 4 bits EDE5108AJSE (64M words × 8 bits) EDE5116AJSE (32M words × 16 bits) Specifications Features • Density: 512M bits • Organization ⎯ 32M words × 4 bits × 4 banks (EDE5104AJSE)

ba1a1g

Abstract: T5 8g
Contextual Info: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5108AHBG 64M words x 8 bits EDE5116AHBG (32M words × 16 bits) Features • Density: 512M bits • Organization  16M words × 8 bits × 4 banks (EDE5108AHBG)  8M words × 16 bits × 4 banks (EDE5116AHBG)

EDE1108AFBG

Abstract: EDE1108AFBG-8E-F DDR2-667 DDR2-800 ELPIDA DDR2 SDRAM
Contextual Info: PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1108AFBG 128M words x 8 bits Specifications Features • Density: 1G bits • Organization  16M words × 8 bits × 8 banks • Package  60-ball FBGA  Lead-free (RoHS compliant) and Halogen-free • Power supply: VDD, VDDQ = 1.8V ± 0.1V

EDE5116AJBG-6E-E

Abstract: EDE5116AJBG
Contextual Info: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5108AJBG 64M words x 8 bits EDE5116AJBG (32M words × 16 bits) Specifications Features • Density: 512M bits • Organization ⎯ 16M words × 8 bits × 4 banks (EDE5108AJBG) ⎯ 8M words × 16 bits × 4 banks (EDE5116AJBG)

EDE5108AHBG

Contextual Info: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5108AHBG 64M words x 8 bits EDE5116AHBG (32M words × 16 bits) Specifications Features • Density: 512M bits • Organization ⎯ 16M words × 8 bits × 4 banks (EDE5108AHBG) ⎯ 8M words × 16 bits × 4 banks (EDE5116AHBG)

EDE5116AHSE

Contextual Info: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5108AHSE 64M words x 8 bits EDE5116AHSE (32M words × 16 bits) Specifications Features • Density: 512M bits • Organization ⎯ 16M words × 8 bits × 4 banks (EDE5108AHSE) ⎯ 8M words × 16 bits × 4 banks (EDE5116AHSE)

DIN 7964

Abstract: SLFLD25-1GBJI
Contextual Info: SLFLD25-xxxJ I 128 MB to 8 GB 2.5-Inch IDE Flash Drives GENERAL DESCRIPTION The SimpleTech SLFLD25-xxxJ(I) are solid-state flash IDE drives with capacities of 128MB to 8GB and in a standard 2.5inch form factor. The IDE drive consists of an IDE controller