T490D106K035AT Search Results

35d21

Abstract: MRF6S20010GNR1 j3068 1990 1142 MRF6S20010N A113 ATC100B9R1BT500XT A115 AN1955 CDR33BX104AKYS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 3, 6/2009 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1014N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1014NT1 Designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and

Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation

t490d106k035at

Abstract: j3068
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with

t490d106k035at

Abstract: MW6S004NT1 MW6S004N A113 A114 A115 AN1955 C101 CDR33BX104AKYS JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6S004N Rev. 2, 2/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier

Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation

Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6S004N Rev. 4, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier

64580

Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6S004N Rev. 3, 4/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 4, 1/2014 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 3, 6/2009 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with

MW6S004NT1

Abstract: MW6S004N FREESCALE PACKING 250GX-0300-55-22 A113 A114 A115 AN1955 C101 CDR33BX104AKYS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6S004N Rev. 4, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier