T40 DIODE Search Results

ON T40

Abstract: LVIR12843-T40-PF
Contextual Info: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only INFRARED EMITTING DIODES Pb Lead-Free Parts LVIR12843-T40-PF DATA SHEET DOC. NO : QW0905- LVIR12843-T40-PF REV. : A DATE : 12 - Oct. - 2009 發行 立碁電子 DCC LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only

triac MAC 97 AB

Abstract: datasheet TRIAC MAC 218 digital control of firing angle of rectifier sin TPS7350 MSP430 TM21 MSP430 General Purpose Subroutines sttab transistor 2N 5461
Contextual Info: The Timer_A ; T40 ; Direction is DOWN SUB &CCR4,CPT4 ; Build time of captured event .sect ”TIMVEC”,0FFF0h ; Timer_A Interrupt Vectors .word TIM_HND ; C/C Blocks 1 to 4 .word TIMMOD0 ; Capture/Compare Block 0 .sect ”INITVEC”,0FFFEh ; Reset Vector .word

diode ys2 100

Abstract: N4921 N4918 1N4000-series LA431 n4919 1n4000 DIODE 1n4000 sERIES DIODES 1N823 1N34* diode
Contextual Info: INTERNATIONAL SEMICOND •=1000370 0000007 T40 « I S E M 41E T H t- ~o JEDEC REGISTERED, TEMPERATURE 1N4148 SWITCHING DIODE COMPENSATED VOLTAGE REFERENCE DIODES (DO-7 Package MAXIMUM RATINGS MECHANICAL O pe rating Tem perature: -6 5 °C to + 2 0 0 °C H e rm e tic a lly Sealed DO-35

104 k5k capacitor

Abstract: k5k 104 capacitor 104 capacitor k5k ibm thinkpad t42 bmdc ibm thinkpad t40 ibm t42 M1E wireless ibm t40 lcd 1802 dfx
Contextual Info: IBM Mobile Systems ThinkPad Computer Hardware Maintenance Manual August 2004 This manual supports: ThinkPad T40/T40p, T41/T41p, T42/T42p MT 2373/2374/2375/2376/2378/2379 ThinkPad Dock II (MT 2877) Note Before using this information and the product it supports, be sure to read the general information

Contextual Info: MbfibZEb 00017G3 T40 • IXY n ixY S Diode Modules MDD56 lTAV= 2 x 71 A VRRM= 400-1800 V ! > > 500 700 900 1300 1500 1700 1000 V rrm V Type Version 1 B 400 600 800 1200 1400 1600 1 80 0 * M D D 56-04N 1 M D D 56-06N 1 M D D 56-08N 1 M D D 56-12N 1 M D D 56-14N 1

eprom 27C16

Abstract: TH7863 MB435 TH7863A
Contextual Info: SSE D ‘îOebflTS 0 0 D 0 7 3 2 T40 • T H C M O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX TH 7863A FRAME TRANSFER CCD IMAGE SENSOR 576 X 384 PIXELS TH OM SO N MIL ET S P A T I A U X ■ Fully Compatible with CCIR TV Standard ■ 2/3" Optics Compatible Image Format 11 mm

Contextual Info: FEATURES MODEL NO. CDS0912 • 2 0 - 4 0 0 0 MHz ■ < 1 dB Insertion Loss up to 3 GHz & ■ TTL Driver PIN Diode SP2T ■ Non-Reflective ■ Replaceable SMA Connectors J1 ♦5V Œ » > « 5. j S ~ o0 TYPICAL PERFORMANCE CONT .p „ PARAMETER OKXATING FREQUENCY

marking T28

Abstract: T31 Marking sot regulator marking T34 T33 Marking sot regulator
Contextual Info: ftlAIEf SURFACE MOUNT DUAL ZENER DIODES 1 WATT DUAL ZENER DIODES / SOT-89 Type Number Marking . V l l l i l l c l i =} | HU OPERATING/STORAGE TEMPERATURE RANGE -5 5 °C to +150°C Voltage Range Maximum Zener . Impedance Z Z T a t lz r Typical Temperature Coefficient

C82 diode

Abstract: marking T34 DZ89-C5V1 DZ89-C18 s5 89A DZ89-C3V9 DZ89-C4V3 DZ89-C4V7 DZ89-C5V6 DZ89-C6V2
Contextual Info: DUAL ZENER DIODES ITT SEtllC O N D/ INTERM ETALL SGE D • Mbô2711 555 0GD2512 m IS I DZ89 Series 1W Dual Zener Diodes SOT-89A Plastic Package TA = 25 °C Two Zener diodes with common cathodes in one package. The common cathodes and the two anodes are each connected to a seperate pin.

motorola U620 diode

Contextual Info: MOTOROLA Order this document by MUR620CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifier MUR620CT . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features:

MUR7015

Abstract: DO-203AB MUR7005 MUR7010 MUR7020
Contextual Info: MO TO RO LA SC D IO DE S / O P T O b 3 b 7 2S S G D Ö b S n b4E D 3^5 MOT? MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA M UR7005 MUR7010 MUR7015 MUR7020 Sw itchm ode Pow er Rectifiers . designed for use in switching power supplies, inverters and as free wheeling diodes,

Contextual Info: b b S S ' m 0024363 2T5 « A P X N AMER PHILIPS/DISCRETE BAV105 b?E D J V ULTRA HIGH-SPEED DIODE Silicon planar epitaxial, ultra-high speed, high conductance diode in a SOD80C envelope. QUICK REFERENCE DATA Continuous reverse voltage VR max. Repetitive peak reverse voltage

DIODE SMD t04

Abstract: BAV105 smd T04 PHILIPS SMALL SIGNAL DIODE
Contextual Info: Philips Semiconductors Product specification High-speed diode BAV105 FEATURES DESCRIPTION • Small hermetically sealed glass SMD package The BAV105 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small hermetically sealed glass SOD8OC SMD

BYV24-800R

Abstract: BYV24-1000 3 phase ac motor speed control
Contextual Info: BYV24 SERIES PHILIPS INTERNATI ON AL SbE D I TllOfiSb 0041314 b47 • P H I N FAST SOFT-RECOVERY RECTIFIER DIODES Fast soft-recovery diodes in DO-4 metal envelopes especially suitable for operation as main and commutating diodes in 3-phase a.c. motor speed control inverters and in high frequency power

FUH -29A001B

Abstract: buk638 BUK638-800A BUK638-800B WO 02S
Contextual Info: Philips Components D atasheet status Prehmriary specification * * • of Im o * March 1991 GENERAL DESCRIPTION N-channel enhancement mode fieW-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable tor motor control applications, eg. in

Contextual Info: • b iX W H 0016321 07« ■ MITSUBISHI OPTICAL DEVICES FU-45SDF-3M76 1.3 |am DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (CATV) D E S C R IP TN ION FE A TU R E S M odule type F U -45S D F -3M 76 has been developed • Distributed Feedback (DFB) Laser diode

Contextual Info: Light Emitting Diodes Reflecting low-dome LEDs <f>4.8 mm SLR-57 Series T h e S L R -5 7 s e rie s a re s m a ll ^ 4 .8 m m L E D s w ith a •E x te r n a l dim ensions (Unit: mm) high lu m in o u s e ffic ie n c y . F o u r c o lo rs a re a v a ila b le ,

AN7256

Abstract: 13T24 fm frontend diode ssc panasonic ag AN7280S FM front-end ic 330lk ZIF-5EF021B FM-IF SYSTEM
Contextual Info: A N 7280S AN7280S FM Front-end IC for Car Radio • Description The AN7280S is a monolithic integrated circuit designed for DTS except RF amp. o f car radio. It features built-in local oscillation frequency buffer output, PIN diode driver fo r antenna dam ping and SSC search stop control

Contextual Info: SE3470/5470 AIGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option . 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range

Contextual Info: ÜË GEC P L E S S E Y o c t o b e r 1995 SE M IC OND UC TOR S DS4231 -2.2 DSF21060SV FAST RECOVERY DIODE KEY PARAMETERS vR R M 6000V 1690A | A V 16000A FSM 1200(lC Q r 6 .5]lls *rr APPLICATIONS • Freewheel Diode. ■ Antiparallel Diode. ■ f Inverters.

5M3T

Abstract: z1071 BAV105 BAW62
Contextual Info: • bbSa^Bl 00243Ô3 STS * A P X N AMER PHILIPS/DISCRETE BAV105 b?E » J V_ ULTRA HIGH-SPEED DIODE Silicon planar epitaxial, ultra-high speed, high conductance diode in a SODSOC envelope. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage Repetitive peak reverse voltage

T40 N03

Abstract: 40N03 T40N03 Code N03 diode t40 NTD40N03R
Contextual Info: NTD40N03R Power MOSFET 45 Amps, 25 Volts N−Channel DPAK Features • • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in

89a mark code smd

Abstract: C15 DO-34 zener smd marking 183 DZ89-C9V1 C6V2 ST SMD marking code 55A mark code T18 Zener diode smd marking e2 DZ89-C3V9 DZ89-C4V7
Contextual Info: DUAL ZENER DIODES IT T S E tllC O N D / IN T E R M E T A LL SGE D • Mbô2711 555 0GD2512 m IS I DZ89 Series 1W Dual Zener Diodes SOT-89A Plastic Package TA = 25 °C Two Zener diodes with common cathodes in one package. The common cathodes and the two anodes are each connected to a seperate pin.

Contextual Info: Philips Components Data sheet status Product specification date of issue March 1991 BUK627-500B PowerMOS transistor Fast recovery diode FET P H I L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a