T3D 91 Search Results

T4A 392

Abstract: T3D 01 1F 474
Contextual Info: www.johansondielectrics.com HIGH TEMPERATURE RADIAL LEADED CAPACITORS KEY FEATURES • • • • • For Use at Temperatures Up to 200°C Rated Working Voltages from 25V to 4KV Rugged Premolded Case with Hi-Temp Epoxy Fill Compact MLC Designs Utilizing Military Grade Ceramics

T3D part marking

Abstract: marking T2B T6B MARKING CODE Sn10Pb88Ag2 T5A 392 T6A marking MARKING CODE T5E T3D 05 T4A 392
Contextual Info: www.johansondielectrics.com HIGH TEMPERATURE RADIAL LEADED CAPACITORS KEY FEATURES • • • • • For Use at Temperatures Up to 200°C Rated Working Voltages from 25V to 4KV Rugged Premolded Case with Hi-Temp Epoxy Fill Compact MLC Designs Utilizing Military Grade Ceramics

T4A 392

Abstract: T5A 392 T3D 89 392 t4a t3d 18 101T3DW105KR4CT
Contextual Info: JOHANSON m www.johansondielectrics.com H ig h T e m p e r a t u r e R a d ia l L e a d e d C a p a c it o r s K ey F eatures -jujhuni 1— mti • • • • For Use at Temperatures Up to 200°C Rated Working Voltages from 25V to 4KV Rugged Premolded Case with Hi-Temp Epoxy Fill

T3D 76

Abstract: Rectifier t3d T3D rectifier Collmer Semiconductor 50kV T3D 6 CS451F07 CS451F12 CS452F15 CS452F25
Contextual Info: COL LME R S E M I C O N D U C T O R INC MAE D • 553 6712 □ □ □ 1 7 c15 D 1 H « C O L Fast Recovery High Voltage Silicon Rectifiers w Minimum Size 7KV to 5 0 KV V r r m Diffused Silicon Junction Low Leakage Current 100 Nanosec. Reverse Recovery

Contextual Info: Thp% H EW LETT 1"HM P A C K A R D Two Channel Optical Incremental Encoder Modules Technical Data HEDS-9000 HEDS-9100 Features Description • • • • • The HEDS-9000 and the HEDS9100 series are high performance, low cost, optical incremental encoder modules. When used with

22810t

Abstract: 20ii2
Contextual Info: 13 10 12 M A TERIAL ENGINEERING NUMBER NUMBER wON TAPE S C - 2 2 6 -04 9 1 6 4 0 9 3 6 ENGINEERING NUMBER ON TAPE S C -2 2 8 -0 4 T STUD S IZ E «4 .126/3.20 .39/9.9 t j [ .469/11.91~ 1.39/35.1 I9 I6 4 0 0 6 I S C - 2 2 8 -0 6 ^ §9 1 6 4 0 9 3 7 S C -2 2 8 -0 6 T

Contextual Info: Please read CAUTION and Notice in this catalog for safety. This catalog has only typical specifications. Therefore you are requested to approve our product specification or to transact the approval sheet for product specification, before your ordering. C02E8.pdf 01.7.26

2N5832

Contextual Info: 8 5 1 4 0 1 9 SPR A G U E. Û513Ô5Ü •=13 SP RA GU E/SEN IC OND GROUP OGOBSfl^ SEM IC O N D S/ IC S T 93D 0 3 5 8 9 D PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain

mpsa18

Contextual Info: SPRAGUE/SEMICOND GROUP T3 85 14 0 19 SPRAGUE. D • ÔS13ÛS0 OGOBSTH S E M I C O N D S / ICS 1 ■ 93 D 0 3 5 9 2 X> PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS atTA = 25°C DC Current Gain ^CBO Device

Contextual Info: C jT O fc D 124-Position 4 x 6 Header 2> ^ l£) I <£><N I nimni in n ii_ in m i niinii. Ä] 7] (7 7 7 7 7 7 ^ ^ [• 86 (3.386) iH m n II U U II U U 24 (HD Ti ADD U U II II U II II U U 11 Ü II II 1918 13 12 7 U U II II II II 6 F 1 contact No. 75.82 (2.985)

08T01

Contextual Info: C02E9.pdf 02.4.27 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage storageand andoperating, operating,rating, rating,soldering solderingand andmounting, mounting,handling handling)ininthis thisPDF

2N3416 Sprague

Contextual Info: SPRAGUE/SEMICOND ! 8514019 GROUP SPRAGUE! T3 D • 0 5 1 3 0 5 0 00Q35fifci 3 ■ SE M IC O N D S / IC S 93D 03586 Ï PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain

T3D 96 diode

Abstract: 65039-032 T3D 91 Diode T3D 64 t3d 62 diode Diode T3D 56
Contextual Info: Tfw\ 1LEM HEW LETT PACKARD Two Channel Optical Incremental Encoder Modules Technical Data H E DS-9000 HEDS-9100 F eatures D escription • • • • • The HEDS-9000 and the HEDS9100 series are high performance, low cost, optical incremental encoder modules. W hen used with

BTB 600 BR

Abstract: tp5372 2N5087 2N5142 2N5221 2N5226 2N5227 2N5354 2N5355 2N5356
Contextual Info: SPRAGUE/SEMICON» GROUP 8 5 140 19 SPRAGUE. T 3 ~ T ~ M flSIHflSO D G G 3 S 1 h ' b S E M I C O N D S / ICS • 93D 0 3 5 9 6 J P _ / T'û 7-9ô PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘2N’ and ‘TP ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C

T3D 34

Contextual Info: High-reliability capacitors WIMA Snubber Cap High performance IGBT-snubber capacitors • Low inductive construction with end-surface contacts. ■ Double-sided metallization for high pulse ratings. ■ Low-loss polypropylene dielectric. ■ Internally series connected for high

MARKING CODE f5

Abstract: GNM314 Diode T3D 46 T3D 45 diode t3d diode C02E10 QU1000
Contextual Info: C02E10.pdf 04.1.20 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF

AB028V1-14

Abstract: DDD4733 S443 CuMoCu
Contextual Info: EBAlpha 23-30 GHz Variable Gain Amplifier AB028V1-14 Features • 30 dB Gain 0.235 5.60 m m ■ 30 dB Attenuation Range 1 0.008 - (0.20 m m ) 0.225 ■ +16 dBm Output Power J (5.72 m m ) 0.450 ■ 3 dB Noise Figure ^ . 1 (11.43 m m ) 0.024 (0.61 m m ) ■ Rugged, Reliable Package

transistor j127

Contextual Info: Philips Semiconductors bbS3T31 OOHT^bH 512 M A P X Prodwtspecltlcatlon VHF push-pull power MOS transistor BLF245B N AMER PHILIPS/ 5 ISCRETE t iT E ]> PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

T3D 66 diode

Abstract: KAI-11000M KAI-11000 DIODE 4008 1000X HLMP-8115 JESD22 KAI-11000CM NLPB500 NSPG500S
Contextual Info: IMAGE SENSOR SOLUTIONS DEVICE PERFORMANCE SPECIFICATION KODAK KAI-11000M KODAK KAI-11000CM Image Sensor 4008 H x 2672 (V) Interline Transfer Progressive Scan CCD June 2, 2003 Revision 3.0 KAI-11000 Rev 3.0 www.kodak.com/go/imagers 585-722-4385 Email: imagers@kodak.com

T3D 62

Abstract: TRANSISTOR C 5857 ICS8761 ICS8761CY ICS8761CYLF ICS8761CYLFT ICS8761CYLN ICS8761CYLNT ICS8761CYT MS-026
Contextual Info: ICS8761 Integrated Circuit Systems, Inc. LOW VOLTAGE, LOW SKEW, PCI / PCI-X CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS8761 is a low voltage, low skew PCI / PCI-X Clock Generator and a member of the HiPerClockS HiPerClockS™ family of High Performance Clock

ICS8761

Abstract: ICS8761CY ICS8761CYLF ICS8761CYLFT ICS8761CYLN ICS8761CYLNT ICS8761CYT MS-026 133.333MHZ Oscillator
Contextual Info: ICS8761 Integrated Circuit Systems, Inc. LOW VOLTAGE, LOW SKEW, PCI / PCI-X CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS8761 is a low voltage, low skew PCI / PCI-X Clock Generator and a member of the HiPerClockS HiPerClockS™family of High Performance Clock

T3D 62

Contextual Info: ICS8761 Integrated Circuit Systems, Inc. LOW VOLTAGE, LOW SKEW, PCI / PCI-X CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS8761 is a low voltage, low skew PCI / PCI-X Clock Generator and a member of the HiPerClockS HiPerClockS™ family of High Performance Clock

Contextual Info: ICS8761 LOW VOLTAGE, LOW SKEW, PCI / PCI-X CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS8761 is a low voltage, low skew PCI / PCI-X Clock Generator. The ICS8761 has a selectable REF_CLK or crystal input. The REF_CLK input accepts LVCMOS or LVTTL input levels. The ICS8761 has a fully

philips catalog potentiometer

Abstract: philips Trimmer 60 pf BLF245B 2222 capacitor philips transistor j127
Contextual Info: Philips Semiconductors bb53131 002111=2 512 M APX Product specification VHF push-pull power MOS transistor BLF245B N AMER P H I L I P S / D I S C R E T E b l E ~ì PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability