T3D 82 Search Results

Contextual Info: b5E D TOKO AMERICA/ SIGNAL SIGNAL PROCESSING TECHNOLOGIES flEMÖTl? DDÜB2SÖ T3D « S P T SPT78 I O 10-BIT, 20 MSPS, ECL OUTPUT A/D CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • • Monolithic 20 MSPS Converter On-Chip Track/Hold

Contextual Info: DISC CERAMIC CAPACITORS TU SO N IX S T Y LE N U M B ER M A X IM U M D IA M E T E R D L E A D S P A C IN G (S) W IR E G A U G E (A W G ) TEMP. CHAR. CODE N T E 5. (% ) MIN TC TOL 858 878 818 848 828 3848 3858 3878 3888 .4 5 7 / 11.61 .5 1 0 / 1 2 .9 5 .6 1 3 / 1 5 .5 7

T3D 24

Abstract: T3D 05 T3D 45 Sn10Pb88Ag2 333 1kv T3D 30 T3D+45 T3D+53
Contextual Info: www.amccaps.com High Temperature Radial Leaded Capacitors Key Features • • • • • For Use at Temperatures Up to 200°C Rated Working Voltages from 25V to 4KV Rugged Premolded Case with Hi-Temp Epoxy Fill Compact MLC Designs Utilizing Military Grade Ceramics

T4A 392

Abstract: T3D 01 1F 474
Contextual Info: www.johansondielectrics.com HIGH TEMPERATURE RADIAL LEADED CAPACITORS KEY FEATURES • • • • • For Use at Temperatures Up to 200°C Rated Working Voltages from 25V to 4KV Rugged Premolded Case with Hi-Temp Epoxy Fill Compact MLC Designs Utilizing Military Grade Ceramics

T3D part marking

Abstract: marking T2B T6B MARKING CODE Sn10Pb88Ag2 T5A 392 T6A marking MARKING CODE T5E T3D 05 T4A 392
Contextual Info: www.johansondielectrics.com HIGH TEMPERATURE RADIAL LEADED CAPACITORS KEY FEATURES • • • • • For Use at Temperatures Up to 200°C Rated Working Voltages from 25V to 4KV Rugged Premolded Case with Hi-Temp Epoxy Fill Compact MLC Designs Utilizing Military Grade Ceramics

Contextual Info: TUSONIX TUSONIX STYLE NUMBER 865 835 805 855 875 815 845 825 M A X IM U M D IA M E T E R D 225/571 275/6 99 344/8 74 420/10 67 475/12.07 .575/1481 .655/16 64 720/18 29 L E A D S P A C IN G (S ) 200/508 250/635 .250/6.35 250/635 250/6.35 375/952 375/9.52

T4A 392

Abstract: T5A 392 T3D 89 392 t4a t3d 18 101T3DW105KR4CT
Contextual Info: JOHANSON m www.johansondielectrics.com H ig h T e m p e r a t u r e R a d ia l L e a d e d C a p a c it o r s K ey F eatures -jujhuni 1— mti • • • • For Use at Temperatures Up to 200°C Rated Working Voltages from 25V to 4KV Rugged Premolded Case with Hi-Temp Epoxy Fill

t3d 66

Abstract: T3D 64 737 s1g t3d 29 T3D 90
Contextual Info: DISC CERAMIC CAPACITORS T U S O N IX S T Y L E N U M B E R M A X I M U M D IA M E T E R D L E A D S P A C IN G (S ) W IR E G A U G E (A W G ) T E M P E R A T U R E C O M P E N S A T IN G E X T E N D E D T E M P E R A T U R E C O M P E N S A T IN G G EN ERAL PU RPO SE

Contextual Info: TUSONIX CAPACITORS 200 Vdc or Less D?SCCERAMlfc TUSONIX STYLE NUMBER 865 835 805 855 875 815 845 825 M A X IM U M D IA M E T E R D . 2 2 5 /5 7 1 .2 7 5 /6 .9 9 . 3 4 4 /0 7 4 4 2 0 /1 0 6 7 .4 7 5 /1 2 0 7 .5 7 5 /1 4 . 8 1 . 6 5 5 /1 6 . 6 4 . 7 2 0 /1 8 2 9

gr42-6

Abstract: T3d 1d T3D 82 GR43-2 Y504 .25T25 gr39 W25D gr42 T3D 98 diode
Contextual Info: This is the PDF file of catalog No.C02E-4. No.C02E4.pdf 98.8.21 !SPECIFICATIONS AND TEST METHODS Specification No. 1 Item Temperature Compensating Type Test Method High Dielectric Constant Type X7R : Y55 to W125D Z5U : W10 to W885D Y5V : Y30 to W885D Operating

T55B

Abstract: T71A t19c t17c t61b t58b t57b T27b t65a T3D 62
Contextual Info: 82371AB PCI ISA IDE Xcelerator PIIX4 23.0 Clock, Reset, ISA Bus, X-Bus, and Host Timing Diagrams Figure 41. Clock Timing Period High Time PCICLK, SYSCLK, OSC 2.0V 0.8V Low Time Fall Time Rise Time Figure 42. Reset Inactive Timing SUS_STAT[1:2]# t2f PCIRST#, RSTDRV

Contextual Info: m h m MTA-100 and MTA-156 Connectors and Headers; CST-100 Connectors and Headers and SL-156 Connectors Catalog 82056 R evised 1-96 CST-100 Shrouded Headers— Straight and Right Angle M aterial and Finish Right Angle .0 2 5 [0 .6 4 ] Square Straight Post (.0 2 5 [0 .6 4 ] Square)

Contextual Info: 500 VOLT TUSONIX 801 M A X IM U M D IA M E T E R D 235/596 290/737 360/9 14 437/12 45 490/12 45 593/15 06 675/17 15 750/1905 800/2032 857/22 23 937/23 80 1 100/27 94 L E A D S P A C IN G (S ) 200/508 250/635 250/635 250/6 35 250/6 35 375/9 52 375/9 52 375/952

Contextual Info: W ie tm v i V 1 U a W ill A DISC CERAMIC CAPACITORS TUSONIX STYLE NUMBER 861 831 801 M A X IM U M 2 3 5 / 5.96 2 9 0 /7 37 .3 6 0 / 9.14 2 0 0 /5 00 . 2 50 /6 2 5 0 /6 35 . 250 / 6.35 250 / 6 . : 5 . 3 75 / 9.52 22 22 22 22 D IA M E T E R D L E A D S P A C IN G (S)

BF 830 transistor

Contextual Info: TIP42F; 42AF TIP42BF; 42CF _ / V . SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are TIP41F, TIP41AF, TIP41BF and TIP41CF.

t3d diode

Abstract: Diode T3D 64 T3D 65 diode T3D 64 diode Diode T3D 03 T3D 89 DIODE T3D 55 diode diode t3d 663 t03 T3D 28 diode
Contextual Info: 711GöSb □Q4Db71 Ib ö • PHIN SbE D P H IL IP S INTERNATIONAL B YV28 SERIES SbE » EPITAXIAL AVALANCHE DIODES Glass passivated epitaxial rectifier diodes in hermetically sealed axial-leaded glass envelopes. They feature low forward voltage drop, very fast recovery, very low stored charge, non-snap-off switching

Contextual Info: !SPECIFICATIONS AND TEST METHODS No. 1 Item Specification 2 Rated Voltage See the previous pages. 3 4 Appearance Dimensions No defects or abnormality. See the previous pages. 5 Dielectric Strength No defects or abnormality. 6 Insulation Resistance I.R. 10,000MΩ min.

T3D 91

Contextual Info: TUSONIX WEECON PLATE CERAMIC CAPACITORS 150/3.01 MAX Temperature Compensating types Extended Temp, Comp, types Stable types General Purpose types 100/2.54 MAX .100/2.54 n THICK 062/1 57 M A X EIA Code Z5 Y5 X5 *X7 EIA Code D E F P R S T U V .062/1 57 MAX

T3D 54 DIODE

Abstract: Diode T3D 56 Diode T3D 24 T3D 75 diode T3D 77 diode T3D 01 DIODE T3D 55 diode Diode T3D 54 T3D 20 diode T3D+54+DIODE
Contextual Info: SSE N AMER PHILIPS / D I S CR E T E bbSBT31 002Cm50 T J> PowerMOS transistor BUK453-100A BUK453-1OOB T -21-11 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

capacitor 6s 100 16v

Abstract: GRP15X5C1H7R
Contextual Info: C02E9.pdf 02.4.27 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage storageand andoperating, operating,rating, rating,soldering solderingand andmounting, mounting,handling handling)ininthis thisPDF

MARKING CODE f5

Abstract: GNM314 Diode T3D 46 T3D 45 diode t3d diode C02E10 QU1000
Contextual Info: C02E10.pdf 04.1.20 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF

MIL-STD-883 method 2019

Abstract: 48T4
Contextual Info: Please read CAUTION and Notice in this catalog for safety. This catalog has only typical specifications. Therefore you are requested to approve our product specification or to transact the approval sheet for product specification, before your ordering. C02E8.pdf 01.7.26

48T4

Contextual Info: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please

T3D 62

Abstract: t3d 98 AT-41400 T3D 87 AT-41400-GP4 t3d 54 chip die npn transistor t3d 69 T3D 83 t3d 66
Contextual Info: K m HEWLETT PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features that are easy to match for low noise and moderate power appli­ cations. This device is designed for use in low noise, wideband amplifier, mixer and oscillator