T3D 65 Search Results

Contextual Info: b5E D TOKO AMERICA/ SIGNAL SIGNAL PROCESSING TECHNOLOGIES flEMÖTl? DDÜB2SÖ T3D « S P T SPT78 I O 10-BIT, 20 MSPS, ECL OUTPUT A/D CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • • Monolithic 20 MSPS Converter On-Chip Track/Hold

LTN243R-10

Abstract: LXL242-G DDS7153 LTN243F-10 LTN243R-50 Philips LCD circuit TI SR 51 2 DISPLAY LTN243 LCD Display 40 pin
Contextual Info: PHILIPS INTERNATIONAL bDE D • 7110flBb DD57152 T3D IPH IN P h ilip s C o m p o n e n ts LTN243 D a ta s h e e t s ta tu s P ro d u c t s p e c ific a tio n d a te of iss u e July 1990 Liquid crystal display M ODULE DESCRIPTION Q UICK REFERENCE DATA O utline dim ensions

Contextual Info: TUSONIX TUSONIX STYLE NUMBER 865 835 805 855 875 815 845 825 M A X IM U M D IA M E T E R D 225/571 275/6 99 344/8 74 420/10 67 475/12.07 .575/1481 .655/16 64 720/18 29 L E A D S P A C IN G (S ) 200/508 250/635 .250/6.35 250/635 250/6.35 375/952 375/9.52

t3d 66

Abstract: T3D 64 737 s1g t3d 29 T3D 90
Contextual Info: DISC CERAMIC CAPACITORS T U S O N IX S T Y L E N U M B E R M A X I M U M D IA M E T E R D L E A D S P A C IN G (S ) W IR E G A U G E (A W G ) T E M P E R A T U R E C O M P E N S A T IN G E X T E N D E D T E M P E R A T U R E C O M P E N S A T IN G G EN ERAL PU RPO SE

T3D 54 DIODE

Abstract: Diode T3D 54 T3D 81 DIODE T3D DIODE T3D 83 DIODE diode T3D 25 Diode T3D 41 CIRCUIT T3D 28 diode MG300M1UK1 T3D 18 diode
Contextual Info: WEST CODE S EMI C OND U CT O RS WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single

Diode T3D 82

Abstract: T3D DIODE Diode T3D 08 Diode T3D 26 T3D 65 diode T3D 82 diode Diode T3D 27 diode T3D 24 T3D 82 T3D 28 DIODE
Contextual Info: MF7643 4-Channel High-Speed Non-Inverting 15 M H z Input Bandwidth 8-Bit DACs with Outpul EJuffers and Parallel Digi :al Data Port M M icro Power System s FEATURES • DACs Matched to ±0.5% typ • Low Harmonic Distortion: 0.25% ypical with VREF = 1 V p - p 0 1 MHz

Contextual Info: SPRAGUE/SEMICOND GROUP 85 14 0 19 SPRAGUE. T3 D • 0513050 ÜDQ3blô 1 ■ S E M I C O N D S / ICS 9 3 D 036 18j> " 0 I " ^ DIODE CHIPS ‘THD’ Rectifiers and General-Purpose Diodes ELECTRICAL CHARACTERISTICS atTA = 25°C vF Device Type THD457 THD458A

TP4119

Abstract: 2n3819 field-effect transistors nj132 TP3823 TP3370 TP4392 2N3819 NJ16 NJ32 TP3369
Contextual Info: 6513650 S PR AG UE /SE NICOND GROUP 8 5 1 4 0 1 9 S P RA GU E, SEMICONDS/ICS 0003b00 4 93 D 03600] 7"- PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C VgS oH) V(flR)GSS Limits Igss Max. (nA) Device Tin*

T3D DIODE

Abstract: T3D 77 T3D 65 diode Diode T3D 54 T3D 54 DIODE T3D 77 diode T3D 01 DIODE Diode T3D 57 BDT65 BDT64C
Contextual Info: BDT65; 65A BDT65B; 65C V PHILIPS INTERNATIONAL SLE ]> • 71ÌG02L 00432^0 Ibfl M P H I N SILICON DARLINGTON POWER TRANSISTORS N P N e p itax ial base transistors in m o n o lith ic D arlin g to n c irc u it fo r au d io o u tp u t stages and general purpose a m p lifie r and sw itching ap plication s. T 0 - 2 2 0 pla stic envelope. P N P com p lem ents are

Contextual Info: 500 VOLT TUSONIX 801 M A X IM U M D IA M E T E R D 235/596 290/737 360/9 14 437/12 45 490/12 45 593/15 06 675/17 15 750/1905 800/2032 857/22 23 937/23 80 1 100/27 94 L E A D S P A C IN G (S ) 200/508 250/635 250/635 250/6 35 250/6 35 375/9 52 375/9 52 375/952

Contextual Info: EPSON PF973-01 SEDI 575 Dot Matrix LCD Driver • OVERVIEW The S E D I 575 series is a single-chip LCD driver for dot-matrix LCDs that can be connected directly to a MPU bus. It accepts 8-bit parallel or serial display data from a MPU, stores it in an on-chip display data RAM =

OPF300

Abstract: LW khz receiver OPF500 OPF510 QPF500 QPF510 850 nm LED
Contextual Info: OPTEK Product Bulletin OPF500 February 1996 M i ^7^0500 0D0EÔ2G Obô H 200kbps Fiber Optic Receiver Type OPF5QO, OPF51Q Series Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Interfaces with all logic circuits • Two output options

Contextual Info: N AMER P H I L I P S / D I S C R E T E b'lE D bb 5 3^ 31 □D3fi3fl? SOT H A P X Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2525A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in

Contextual Info: For use with pin headers shown on pages F8 to FI 2. Can be fitted and removed by hand. An alternative on-board programming method to DIL switches. Open top for test probe. Choice of plating finish. PITCH J u m p e r S o c k e t O p e n Top 2mm M22 C onnectors

T3D 47 diode

Abstract: T3D 62 T3D 67 T3D 67 diode T3D 85 85310AYI-01LF T3D 3d t3d 62 diode ICS5310I-01 ICS85310AYI-01
Contextual Info: Low Skew, 1-to-10 Differential-to-3.3V, 2.5V LVPECL/ECL Fanout Buffer ICS85310I-01 DATA SHEET General Description Features The ICS85310I-01 is a low skew, high performance 1-to-10 Differential-to-2.5V/3.3V ECL/LVPECL Fanout HiPerClockS Buffer. The CLKx, nCLKx pairs can accept most

2SK2352

Contextual Info: TOSHIBA Discrete Semiconductors 2SK2352 Field Effect Transistor Unit in m m Silicon N Channel M O ST ype m-MOS IV High Speed, High Current Switching, DC-DC Converter Chopper Regulator and Motor Drive Applications Features • 4V Gate Drive • Low Drain-Source ON Resistance

T3D diode

Abstract: T3D 55 diode T3D 45 diode Diode T3D 55 T3D 01 DIODE T3D 43 diode T3D 65 diode DIODE T3D 95 diode T3D Diode T3D 30
Contextual Info: Ju n e 1996 National Semiconductor ” NDT451N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

Contextual Info: SPRAGUE/SEMICOND CROUP 85 14 0 1 9 SPRAGUE, T3 D • S E M I C O N D S / ICS ÔS1 3 flS0 0 0 0 3 5 7 2 3 93D 03572 _ BIPOLAR TRANSISTOR CHIPS PNP Transistors T H ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C

Contextual Info: SPRAGUE/SENICOND GROUP T3 D • ÖS13SS0 00035=15 8 5 1 4 0 1 9 S P R A G U E ’ S E M I C O N D S / ICS 4 ■ 9 3 D 0 3 5 9 5 J PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘2N’ and ‘T P ’ Device Types ELECTRICAL CHARACTERISTICS atTA = Z5°C

thc2510

Contextual Info: I SPRAGUE/SEMICOND 8514019 SPRAGUE. GROUP =13 D • SEMICONDS/ ICS ÖS1BÖSG 93D 000355=1 03559 BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘TH’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C 500 10 750 10 360 0.01 225 2.0 225 2.0 5.0 5.0 5.0 4.5 4.5

Contextual Info: SPRAGUE/SEtllCOND 8514019 SPRAGUE, G R OU P 13 T> • SEMICONDS/ IC S Ö513ÖSD GGGaSbT 93D 0 3 5 6 9 2>^ r - â 3 - i ■ - BIPOLAR TRANSISTOR CHIPS NPN Transistors Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TÄ = 25°C DC Current Gain Ic ß O

Contextual Info: SPRAGUE/ 1 : SPRAGUE/SEMICOND 8514019 SPRAGUE! GROUP T3 D • SEMICONDS / ICS ÖS13Ö50 0003550 =5 T^âl^O 93D 0 3 5 5 8 P BIPOLAR TRANSISTOR CHIPS NPN Transistors T H ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO Device Type DC Current Gain

T3D 34

Contextual Info: High-reliability capacitors WIMA Snubber Cap High performance IGBT-snubber capacitors • Low inductive construction with end-surface contacts. ■ Double-sided metallization for high pulse ratings. ■ Low-loss polypropylene dielectric. ■ Internally series connected for high

Contextual Info: 13 ;SP RA GU E/SEM IC OND GROUP D • flS13û5G G003571 1 ■ 8514 0 19 S P R A G U E , S E M I C O N D S / ICS 93D 03571 J>. 7"*?$ BIPOLAR TRANSISTOR CHIPS PNP Transistors T H ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type DC Current Gain