MMBT2222A
|
|
Shenzhen Heketai Electronics Co Ltd
|
NPN bipolar transistor in SOT-23 surface mount package, with 40 V collector-emitter voltage, 600 mA collector current, 300 mW power dissipation, and DC current gain ranging from 100 to 300. |
Original |
PDF
|
|
|
|
MMBT2222A
|
|
Shikues Semiconductor
|
|
Original |
PDF
|
|
|
|
MMBT2222AM
|
|
JCET Group
|
MMBT2222AM is an NPN epitaxial planar transistor in a SOT-723 package with 40V collector-emitter breakdown voltage, 0.5A continuous collector current, and 300MHz transition frequency, suitable for high-speed switching and amplification applications. |
Original |
PDF
|
|
|
|
MMST2222A
|
|
JCET Group
|
NPN transistor in SOT-323 package with 40V collector-emitter voltage, 600mA continuous collector current, 200mW power dissipation, and DC current gain up to 300, suitable for general-purpose switching and amplification applications. |
Original |
PDF
|
|
|
|
MMBT2222A
|
|
JCET Group
|
NPN transistor in SOT-23 package with 40V collector-emitter voltage, 600mA continuous collector current, 300mW power dissipation, and DC current gain ranging from 100 to 300. |
Original |
PDF
|
|
|
|
MMBT2222ADW
|
|
CREATEK Microelectronics
|
Dual NPN small signal transistor in SOT-363 package, with 40V VCEO, 600mA collector current, 200mW power dissipation, and transition frequency of 300MHz, suited for medium power amplification and switching applications. |
Original |
PDF
|
|
|
|
MMBT2222AT
|
|
Shikues Semiconductor
|
Silicon Epitaxial Planar Transistor for switching and amplifier applications |
Original |
PDF
|
|
|
|
MMBT2222AW
|
|
CREATEK Microelectronics
|
Dual NPN small signal transistor in SOT-323 package, with 40V collector-emitter voltage, 600mA continuous collector current, 200mW power dissipation, and transition frequency of 300MHz, suitable for medium power amplification and switching applications. |
Original |
PDF
|
|
|
|
MMBT2222A
|
|
SLKOR
|
Switching Transistor, VCEO 30-40V, VCBO 60-75V, VEBO 5.0-6.0V, Ic 600mA, PD 225-300mW, RΘJA 417°C/W, TJ -55 to +150°C. |
Original |
PDF
|
|
|
|
MMBT2222A
|
|
AK Semiconductor
|
MMBT2222A SOT-23 NPN transistor with 40V VCEO, 600mA continuous collector current, 150°C operating junction temperature, and 300MHz transition frequency in a compact surface-mount package. |
Original |
PDF
|
|
|
|
MMBT2222AT
|
|
JCET Group
|
MMBT2222AT is an NPN transistor in a SOT-523 plastic package, featuring a collector-emitter voltage of 40V, collector current of 600mA, DC current gain up to 300, and transition frequency of 300MHz. |
Original |
PDF
|
|
|
|
MMBT2222A
|
|
Shandong Jingdao Microelectronics Co Ltd
|
NPN transistor in SOT-23 package with 40V VCEO, 600mA continuous collector current, 300mW power dissipation, and transition frequency up to 250MHz, suitable for high-frequency amplification and switching applications. |
Original |
PDF
|
|
|
|
MMDT2222AW
|
|
CREATEK Microelectronics
|
Dual NPN small signal transistor in SOT-363 package, with 40V collector-emitter voltage, 600mA continuous collector current, 200mW power dissipation, and DC current gain up to 300, suited for medium power amplification and switching applications. |
Original |
PDF
|
|
|
|
MMBT2222A
|
|
CREATEK Microelectronics
|
NPN small signal transistor in SOT-23 package, with 40 V VCEO, 600 mA continuous collector current, 300 mW power dissipation, and DC current gain up to 300, suitable for medium power amplification and switching applications. |
Original |
PDF
|
|
|
|
|
|
MMBT2222A 1P
|
|
JCET Group
|
MMBT2222A is an NPN transistor in SOT-23 package, featuring 40V VCEO, 600mA continuous collector current, 300mW power dissipation, and DC current gain from 100 to 300, suitable for general-purpose switching and amplification applications. |
Original |
PDF
|
|
|
|
MMBT2222A-G
|
|
JCET Group
|
MMBT2222A NPN transistor in SOT-23 package with 40V collector-emitter voltage, 600mA continuous collector current, 300mW power dissipation, and DC current gain ranging from 100 to 300. |
Original |
PDF
|
|
|
|
MMST2222A
|
|
Shenzhen Heketai Electronics Co Ltd
|
NPN bipolar transistor in SOT-323 surface mount package, with 40V collector-emitter voltage, 600mA collector current, 200mW power dissipation, and DC current gain up to 300, suitable for general-purpose switching and amplification applications. |
Original |
PDF
|
|
|
|
PXT2222A
|
|
Shikues Semiconductor
|
Epitaxial planar die construction, Complementary PNP Type available (PXT2907A). |
Original |
PDF
|
|
|
|
PZT2222A
|
|
JCET Group
|
NPN transistor in SOT-223 package with 40V collector-emitter voltage, 600mA continuous collector current, 1W power dissipation, and DC current gain up to 300, suitable for general-purpose switching and amplification applications. |
Original |
PDF
|
|
|
|
PXT2222A(RANGE:100-300)
|
|
JCET Group
|
NPN transistor in SOT-89-3L package with 40V collector-emitter voltage, 600mA continuous collector current, 0.5W power dissipation, and DC current gain up to 300, suitable for general-purpose switching and amplification applications. |
Original |
PDF
|
|
|
MMBT2222A
