T2222, Search Results
T2222, Datasheets (24)
Select Manufacturer
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| T22221510000G | Amphenol Anytek | Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLK 22POS 35DEG 5.08MM PCB | Original | 105.36KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222A
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Shenzhen Heketai Electronics Co Ltd | NPN bipolar transistor in SOT-23 surface mount package, with 40 V collector-emitter voltage, 600 mA collector current, 300 mW power dissipation, and DC current gain ranging from 100 to 300. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222A
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Shikues Semiconductor | Original | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222A
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JCET Group | NPN transistor in SOT-23 package with 40V collector-emitter voltage, 600mA continuous collector current, 300mW power dissipation, and DC current gain ranging from 100 to 300. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMST2222A
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JCET Group | NPN transistor in SOT-323 package with 40V collector-emitter voltage, 600mA continuous collector current, 200mW power dissipation, and DC current gain up to 300, suitable for general-purpose switching and amplification applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222AM
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JCET Group | MMBT2222AM is an NPN epitaxial planar transistor in a SOT-723 package with 40V collector-emitter breakdown voltage, 0.5A continuous collector current, and 300MHz transition frequency, suitable for high-speed switching and amplification applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222A
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Shandong Jingdao Microelectronics Co Ltd | NPN transistor in SOT-23 package with 40V VCEO, 600mA continuous collector current, 300mW power dissipation, and transition frequency up to 250MHz, suitable for high-frequency amplification and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMDT2222AW
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CREATEK Microelectronics | Dual NPN small signal transistor in SOT-363 package, with 40V collector-emitter voltage, 600mA continuous collector current, 200mW power dissipation, and DC current gain up to 300, suited for medium power amplification and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222A
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AK Semiconductor | MMBT2222A SOT-23 NPN transistor with 40V VCEO, 600mA continuous collector current, 150°C operating junction temperature, and 300MHz transition frequency in a compact surface-mount package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222AT
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JCET Group | MMBT2222AT is an NPN transistor in a SOT-523 plastic package, featuring a collector-emitter voltage of 40V, collector current of 600mA, DC current gain up to 300, and transition frequency of 300MHz. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222A
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SLKOR | Switching Transistor, VCEO 30-40V, VCBO 60-75V, VEBO 5.0-6.0V, Ic 600mA, PD 225-300mW, RΘJA 417°C/W, TJ -55 to +150°C. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222A
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CREATEK Microelectronics | NPN small signal transistor in SOT-23 package, with 40 V VCEO, 600 mA continuous collector current, 300 mW power dissipation, and DC current gain up to 300, suitable for medium power amplification and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PXT2222A(RANGE:100-300)
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JCET Group | NPN transistor in SOT-89-3L package with 40V collector-emitter voltage, 600mA continuous collector current, 0.5W power dissipation, and DC current gain up to 300, suitable for general-purpose switching and amplification applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222
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Shenzhen Heketai Electronics Co Ltd | NPN bipolar transistor in SOT-23 surface mount package, with 40 V collector-emitter voltage, 600 mA collector current, 300 mW power dissipation, and DC current gain ranging from 100 to 300. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMST2222A
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Shenzhen Heketai Electronics Co Ltd | NPN bipolar transistor in SOT-323 surface mount package, with 40V collector-emitter voltage, 600mA collector current, 200mW power dissipation, and DC current gain up to 300, suitable for general-purpose switching and amplification applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PXT2222A
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Shikues Semiconductor | Epitaxial planar die construction, Complementary PNP Type available (PXT2907A). | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222A
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Microdiode Semiconductor (MDD) | SOT-23, NPN, epitaxial planar die construction. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PZT2222A
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JCET Group | NPN transistor in SOT-223 package with 40V collector-emitter voltage, 600mA continuous collector current, 1W power dissipation, and DC current gain up to 300, suitable for general-purpose switching and amplification applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMDT2222A
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JCET Group | Dual NPN transistor in SOT-363 package with 40V collector-emitter voltage, 600mA continuous collector current, 200mW power dissipation, and DC current gain up to 300. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222A 1P
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JCET Group | MMBT2222A is an NPN transistor in SOT-23 package, featuring 40V VCEO, 600mA continuous collector current, 300mW power dissipation, and DC current gain from 100 to 300, suitable for general-purpose switching and amplification applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
T2222, Price and Stock
Select Manufacturer
Rochester Electronics LLC PMBT2222AQAZTRANS NPN 40V 0.6A DFN1010D-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PMBT2222AQAZ | Bulk | 40,977 | 3,504 |
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Buy Now | |||||
PanJit Group MMBT2222A_R1_00001TRANS NPN 40V 0.6A SOT-23 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMBT2222A_R1_00001 | Cut Tape | 34,466 | 1 |
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Buy Now | |||||
| MMBT2222A_R1_00001 | Digi-Reel | 34,466 | 1 |
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Buy Now | ||||||
| MMBT2222A_R1_00001 | Tape & Reel | 33,000 | 3,000 |
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Buy Now | ||||||
Nexperia PMBT2222AMBYLTRANS NPN 40V 0.6A DFN1006B-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PMBT2222AMBYL | Digi-Reel | 25,139 | 1 |
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Buy Now | |||||
| PMBT2222AMBYL | Cut Tape | 25,139 | 1 |
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Buy Now | ||||||
| PMBT2222AMBYL | Tape & Reel | 10,000 | 10,000 |
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Buy Now | ||||||
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PMBT2222AMBYL | 20,387 | 1 |
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Buy Now | ||||||
Micro Commercial Components MMBT2222AT-TPTRANS NPN 40V 0.6A SOT-523 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMBT2222AT-TP | Digi-Reel | 3,479 | 1 |
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Buy Now | |||||
| MMBT2222AT-TP | Cut Tape | 3,479 | 1 |
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Buy Now | ||||||
DCOMPONENTS MMBT2222A-AQBJT, SOT-23, 40V, 600MA, NPN, 0. |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMBT2222A-AQ | Tape & Reel | 3,000 | 3,000 |
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Buy Now | |||||