T1996 Search Results

Contextual Info: ADVANCE MT58LC128K16/18E1 128K X 16/18 SYNCBURST SRAM MICRON +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES Fast access times: 8.5, 9 ,1 0 , 11 and 12ns Fast OH# access times: 5 and 6ns +3.3V + 0 .3 V /-0 .1 6 5 V p o w er supply (V cc

Contextual Info: ADVANCE MT4LDT164H X (L), MT8LDT264H(X)(L) 1 MEG, 2 MEG x 64 DRAM MODULES MICRON I TECHNOLOGY. INC. SMALL-OUTLINE DRAM MODULE 1 MEG, 2 MEG x 64 8, 16 MEGABYTE, 3.3V, OPTIONAL EXTENDED REFRESH, FAST PAGE OR EDO PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 144-pin,

Contextual Info: PRELIMINARY MT4LD T 164A (X), MT8LD264A (X), MT16LD464A (X) 1, 2, 4 MEG X 64 DRAM MODULES MICRON I TECHNOLOGY. INC. 1, 2, 4 MEG DRAM MODULE 8, 16, 32 MEGABYTE, NONBUFFERED, 3.3V, EDO OR FAST PAGE MODE FEATURES • • • • • • • • • • X 64 PIN ASSIGNMENT (Front View)

5 PEN PC TECHNOLOGY advance

Contextual Info: ADVANCE MT2D T 132 B, MT4D232 B, MT8D432 B 1, 2, 4 MEG X 32 BURST EDO DRAM MODULES M IC R O N I rECMNOLOGV NC.- 1, 2, 4 MEG [BURST EDO IDRAM MODULE X 32 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES • 72-pin, single-in-line memory modu e (SIM M ) • Burst EDO order, interleave or linea •, programmer by

108185

Abstract: 1-968700-1 1-1718346-1
Contextual Info: T H I S DRAWI NG I S U N P U B L I S H E D . VERTRAULICHE UNVEROEFFENTLICHTE ZEICHNUNG COPYRIGHT- R E L E A S E D FOR P U B L I C A T I O N FREI FUER VEROEFFENTLICHUNG ALL RIGHTS RESERVED. ALLE RECHTE VORBEHALTEN ^ATED W ITH: DA55END ZU; LOC PROJEKT NR.: