k4212
Abstract: K2611 F1 J37 pmd 11 k40 X740 Xceive K3112 k4112 2M172 CC-130
Contextual Info: 1-12-1999_10:20 A +3V B R11 TO R16 N11 TO N16 L11 TO L16 T11 TO T16 P11 TO P16 M11 TO M16 THERMAL PINS D10, C8, C6, B3, AF4 A18, D16, B14, D13, A11 C26, A26, B24, A23, C20 M26, K26, H26, G24, E25 Y24, W23, U25, P23, N25 AD19, AF23, AF26, AA23 AE10, AD13, AF14, AF18
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bt00-x740-cbt00-x740k4212k2611+8f1 j37pmd 11 k40x740xceivek3112k41122m172cc-130
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T16 C6
Abstract: PA-PGA176-03
Contextual Info: PA-PGA176-03 Map Rev A, 4/11/95 Generic Pinout 155,133 111,89 PGA 176 1989 67,45 23,1 1,23 -03G Bottom View- Base 44,22 -03G A16 T1 T16 © 88,66 176 A1 I.E. 176,154 132,110 89,111 133,155 45,67 PGA 22,44 1989 66,88 I.E. 110,132 154,176 Top View- PGA Xilinx Specific Pinout
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160 e7
Abstract: 484-pin BGA diodes t25 4 l9 AC22 AE23 AF14 EPF10K30A t25 4 k8 t25 4 H9 E22/6/BC237/238/239/EPC16/TL7660IDGKRG4-datasheet
Contextual Info: EPF10K30A Device Pin-Outs ver. 1.0 Pin Name 144-Pin TQFP MSEL0 2 77 MSEL1 (2) 76 nSTATUS (2) 35 nCONFIG (2) 74 DCLK (2) 107 CONF_DONE (2) 2 208-Pin PQFP/RQFP 108 107 52 105 155 2 240-Pin PQFP/RQFP 124 123 60 121 179 2 256-Pin FineLine BGA P1 R1 T16 N4 B2
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epf10k30a144-pin208-pin240-pin+14256-pin356-pin484-pinepf10k100a600-pin160 e7484-pin bgadiodes t25 4 l9ac22ae23af14t25 4 k8t25 4 h9e22/6/bc237/238/239/epc16/tl7660idgkrg4-datasheet
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VMD32
Abstract: R526
Contextual Info: 1 2 3 4 5 6 7 8 BWP BCA11 BCA10 BCA25 BCA12 BCA24 BCA15 BCA23 BCA16 BCA22 BCA21 BCA20 BCA14 BCA19 BCA13 BCA18 BCA8 BCA17 BCA9 U6 T8 T16 T13 T11 R6 R15 P5 P16 M16 D11 D10 C10 B10 A10 D9 C9 B9 A9 D8 C8 B8 A8 E7 D7 C7 B7 A7 E6 D9 3,7,20 2 AGP_BUSY# 1 G_REQ# 3
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bca11bca10bca25bca12+8bca24bca15bca23bca16bca22bca21vmd32r526
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pbE1 sot23
Abstract: A10 sot23-5 F1 J37 J119 SOT23 M7 j632 IO830 sot23-5 a17 H12 SOT23-5 A44 SOT23-5 cc150
Contextual Info: tied low = A B T11 TO T16 P11 TO P16 M11 TO M16 NC 1 2 J23 1 2 APPROVALS DRAWN DAN JEFF C SCOTT CHECKED ENGINEER MULLIN 303 543-2029 B 1 VGG 1 1 1 1 2 2 J100 2 J90 2 J96 2 J95 2 J89 2 J94 2 J91 2 J92 2 J93 2 J99 2 J115 DATE SIZE SCALE: TRST TCK TMS PCITDI
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clk66rs8234cx282504201-xc+14pe685326pe685386bt00-d700-009bt00-x700pbe1 sot23a10 sot23-5f1 j37j119sot23 m7 j632io830sot23-5 a17h12 sot23-5a44 sot23-5cc150
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871L-B20E40-T2
Abstract: 871l-xcb15s40 872C-D4NP12-E2 872c-d4np12-d4 872c-dh4np12-d4 871C-P5A18 872C-D5NP18-D4 871C-P2A12 875CP-D20NP30-A2 871C-C5A18
Contextual Info: Inductive, Ultrasonic, and Capacitive Sensor/ Programmable Controller Interface Manual 1771 PLCR I/O 1746 SLCt I/O 1747 SLCt I/O 1791 Block I/O 1794 Flext I/O 1761 MicroLogixt 1000 Preferred Compatibility How To Use This Manual The information in this manual is divided into two sections. The first section
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871l-b20e40-t2871l-xcb15s40872c-d4np12-e2872c-d4np12-d4+6872c-dh4np12-d4871c-p5a18872c-d5np18-d4871c-p2a12875cp-d20np30-a2871c-c5a18
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P62H
Abstract: ICD, P44 DATA SHEET DA16 P-FBGA169 DST1 SIO CHIP P-FBGA 169 "saturation instruction" "saturation" "instruction" DST2 dsio dclk
Contextual Info: S1C33401 CMOS 32-bit Single Chip Microcomputer ● ● ● ● ● ● ● ● ● 32-bit C33 ADV RISC Core with 8K-byte Cache Low Power Consumption Multiply Accumulation Built-in 32K-byte + 1K-byte RAM 10-bit ADC 4-ch. SIO 10-ch. PWM Timer with DA16 Mode
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s1c3340132-bit32k-byte10-bit+1110-chp62hicd, p44 data sheetda16p-fbga169dst1sio chipp-fbga 169saturation instructionsaturation" "instructiondst2 dsio dclk
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Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ^ 0 4 8 1 8 5 0 for Rev.L 8 M-BIT SYNCHRONOUS GRAM 128K-WORD BY 32-BIT BY 2-BANK Description The ,uPD481850 is a synchronous graphics memory SGRAM organized as 131,072 words x 32 bits x 2 banks random access port.
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128k-word32-bitupd481850100-pin+4s100gf-65-jbtjupd481850pd481850pd481850gf-jbt
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Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT jUPD4811650 for Rev.E 16 M-BIT SYNCHRONOUS GRAM 256K-WORD BY 32-BIT BY 2-BANK Description The ,uPD4811650 is a synchronous graphics memory SGRAM organized as 262,144 words x 32 bits x 2 banks random access port.
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jupd4811650256k-word32-bitupd4811650+1100-pin
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Contextual Info: P R E LIM IN A R Y DA TA SH EE T MOS INTEGRATED CIRCUIT aîPD4811650 for Rev.K 16 M-BIT SYNCHRONOUS GRAM 256K-WORD BY 32-BIT BY 2-BANK Description The ,uPD4811650 is a synchronous graphics memory SGRAM organized as 262,144 words x 32 bits x 2 banks random access port.
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apd4811650256k-word32-bitupd4811650+2100-pinpd4811650
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S1C17705
Abstract: S5U1C17001C S1C17
Contextual Info: CMOS 16-BIT SINGLE CHIP MICROCOMPUTER S1C17705 Technical Manual Rev.1.0 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any liability
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ty9000
Abstract: TY9000A 1g nand mcp TY9000A000CMGF SD4051 TY9000A000 tc58dyg02f2 nand toshiba ty9000 FBGA149 toshiba mcp
Contextual Info: TY9000A000CMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY9000A000CMGF is a mixed multi-chip package containing a 536,870,912-bit Low Power Synchronous
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ty9000a000cmgf912-bit256-bit149-pin+11p-fbga149-1013-0n-29/29ty9000ty9000a1g nand mcpsd4051ty9000a000tc58dyg02f2nand toshiba ty9000fbga149toshiba mcp
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ty9000
Abstract: TY9000A ty9000a400 MCP 256M nand toshiba TY9000A400BMGF 1g nand mcp toshiba mcp 512M nand mcp ty90 MCP 1g nand toshiba
Contextual Info: TY9000A400BMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY9000A400BMGF is a mixed multi-chip package containing a 536,870,912-bit 268,435,456-bit x 2devices
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ty9000a400bmgf912-bit456-bit256-bit+12149-pinp-fbga149-1013-0n-29/29ty9000ty9000aty9000a400mcp 256m nand toshiba1g nand mcptoshiba mcp512m nand mcpty90mcp 1g nand toshiba
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toyocom HCM filter
Abstract: bare die show all kinds of LED Epson SuperFlash toyocom crystal filter 10.7 S1C17703 S1C17705
Contextual Info: CMOS 16-BIT SINGLE CHIP MICROCONTROLLER S1C17705/703 Technical Manual Rev.1.2 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any liability
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16-bits1c17705/703toyocom hcm filterbare die+5show all kinds of ledepson superflashtoyocom crystal filter 10.7s1c17703s1c17705
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ty9000
Abstract: MCP 256M nand toshiba ty90 TY90009400DMGF toshiba mcp ty900 nand toshiba ty9000 FBGA149 toshiba nand TM P-FBGA149-1013-0
Contextual Info: TY90009400DMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY90009400DMGF is a mixed multi-chip package containing a 536,870,912-bit 268,435,456-bit x 2devices
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ty90009400dmgf912-bit456-bit128-bit+11149-pinp-fbga149-1013-0n-29/29ty9000mcp 256m nand toshibaty90toshiba mcpty900nand toshiba ty9000fbga149toshiba nand tm
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i351
Abstract: LOGIC FCT BT 342 project
Contextual Info: CMOS 32-BIT SINGLE CHIP MICROCOMPUTER S1C33E08 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not
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Mc 10045
Abstract: S1C17706 RF3P01 Epson SuperFlash P17M
Contextual Info: CMOS 16-BIT SINGLE CHIP MICROCONTROLLER S1C17706 Technical Manual Rev. 1.1 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any liability
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TY9000
Abstract: MCP 256M nand toshiba toshiba mcp nand toshiba mcp ty900 TY90009 512M x 8 Bit nand FBGA149 toshiba nand TM TY90009400FMGF
Contextual Info: TY90009400FMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY90009400FMGF is a mixed multi-chip package containing a 536,870,912-bit 268,435,456-bit x 2devices
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ty90009400fmgf912-bit456-bit128-bit+12149-pinp-fbga149-1013-0n-29/29ty9000mcp 256m nand toshibatoshiba mcp nandtoshiba mcpty900ty90009512m x 8 bit nandfbga149toshiba nand tm
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xdr rambus
Abstract: xdr elpida
Contextual Info: XDR DRAM 8x16Mx4 Advance Information Overview XDR DRAM CSP x4 Pinout The 512Mb Rambus XDR DRAM device is a CMOS DRAM organized as 128M words by 4 bits. The use of Differential Rambus Signaling Level DRSL technology permits 4000/ 3200/2400 Mb/s transfer rates while using conventional system and board design technologies. XDR DRAM devices are
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8x16mx4512mbdl-0211xdr rambus+1xdr elpida
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S1C17711
Abstract: DATA VISION LCD MODULE p34 T16A S1C17
Contextual Info: CMOS 16-BIT SINGLE CHIP MICROCONTROLLER S1C17711 Technical Manual Rev.1.0 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any liability
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16-bits1c17711representat52-2585-4600data vision lcd module p34+2t16as1c17
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XDR Rambus
Abstract: 8x4Mx16
Contextual Info: XDR DRAM 8x4Mx16/8/4/2 Overview XDR DRAM CSP x16 Pinout The Rambus XDR™ DRAM device is a general-purpose highperformance memory device suitable for use in a broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low
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murata REEL label
Contextual Info: CMOS 32-BIT SINGLE CHIP MICROCOMPUTER S1C33E07 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not
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LCD 320 x 240 mono stn
Contextual Info: CMOS 32-BIT SINGLE CHIP MICROCOMPUTER S1C33E07 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not
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MCP 256M nand toshiba
Abstract: TY80009000AMGF toshiba mcp FBGA149 toshiba mcp nand 512M nand mcp nand sdram mcp TOSHIBA M9
Contextual Info: TY80009000AMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY80009000AMGF is a mixed multi-chip package containing a 268,435,456-bit Low Power Synchronous DRAM and a 553,648,128-bit Nand E2PROM. The TY80009000AMGF is available in a 149-pin BGA package
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ty80009000amgf456-bit128-bit149-pin+9p-fbga149-1013-0n-39/39mcp 256m nand toshibatoshiba mcpfbga149toshiba mcp nand512m nand mcpnand sdram mcptoshiba m9
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