T1501 Search Results

6EH8

Abstract: rs tube M 1958 M general electric
Contextual Info: 6EH8 6EH8 ET-T1501 Page 1 9 - 58 TRIODE-PENTODE f le e t s * * FOR VHF CONVERTER APPLICATIONS TUBES DESCRIPTION A N D RATING = The 6EH8 is a miniature tube which contains a sharp-cutoff pentode and a triode in one envelope. It is intended primarily for use as a combined triode

TT 1509N

Abstract: t1189n 1509n t-1549 T909N T221N 380NT
Contextual Info: Phase Control Thyristors 8000 V T1501N Line-Voltage T201N 7000 V 2000 \km 4160 Vans T 5 0 1 N -. T821N T1081N 5200 M v r r m T 1551N T2851N T1451N T2401N Concept 4200 V • .asm T731N T739N í J3 S ß tt T1401[Ü- i 3600 V 1000 \^ ìms T2001N T3401N T2P09N

BT152D

Abstract: BT151D ss2525
Contextual Info: S C S -T H O M S O N IL !C T ^@ K IB e s Application Specific Discretes A.S.D. TH B T15011D T H B T 15012D DUAL TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION FEATURES . BIDIRECTIONAL CROWBAR PROTECTION BETWEEN TIP AND GND, RING AND GND, AND BETWEEN TIP AND RING.

FC66M

Contextual Info: D E V IC E S P E C IF IC A T IO N 10 AND 14-OUTPUT LVTTL CLOCK DRIVERS FEATURES • T en o r fo u rte en c lo c k outpu ts - Outputs operate at frequencies up to 80 M Hz - Outputs grouped in two banks of five outputs on SC3318 SC3318/27/67/68 APPLICATIONS

attansic f1

Abstract: RC415M Attansic l1 RC415ME asus attansic lan schematic Attansic f2 PAD381 PT6319 d1106
Contextual Info: 5 4 3 F5R BLOCK DIAGRAM 2 1 CPU Yonah Single core Yonah Celeron D D Page 2 AGTL+ 133/166MHz LVDS Page 10 DDR2 533/667 RC415ME CRT Single Channel PCIE Page 11 DUAL DDR2 SO-DIMM Page 12,13,14 Page 5,6,7,8,9 PCIE X4 C C MINICARD SB600 Page 28 LAN 10/100 ATTANSIC L2

IT8511TE

Abstract: asus C5915 IT8511 C3923 J6801 c7319 R5707 T8-232 T2448
Contextual Info: 5 01 D C B A 4 Block Diagram 61 02 System Setting 62 USB CONN 03 * 63 * 04 04_CPU-Merom HOST 64 ISA ROM 05 05_CPU-Merom(PWR) 65 SPI ROM 06 * 66 LED 07 07_CRESTLINE(HOST) 67 * 08 08_CRESTLINE(DMI & CFG) 68 DC & BAT IN 09 09_CRESTLINE(GRAPHIC) 69 * 10 10_CRESTLINE(DDR2)

Attansic L1

Abstract: pr6239 RC415M RC415ME ICS951463AGLFT ASUS attansic f1 RTS5117 C3902 ICS951463
Contextual Info: 5 4 3 F5R BLOCK DIAGRAM 2 1 CPU Yonah Single core Yonah Celeron D D Page 2 AGTL+ 133/166MHz LVDS Page 10 DDR2 533/667 RC415ME CRT Single Channel PCIE Page 11 DUAL DDR2 SO-DIMM Page 12,13,14 Page 5,6,7,8,9 PCIE X4 C C MINICARD SB600 Page 28 LAN 10/100 ATTANSIC L2

Attansic L1

Abstract: IT8511TE ALC660 bd3702 c5914 c5803 cd3102 asus attansic f1 C4422
Contextual Info: 5 Block Diagram 61 02 System Setting 62 C * 63 * 04_CPU-Merom HOST 64 ISA ROM 05 05_CPU-Merom(PWR) 65 SPI ROM * 66 07_CRESTLINE(HOST) 67 * 08 08_CRESTLINE(DMI & CFG) 68 DC & BAT IN 09 09_CRESTLINE(GRAPHIC) 69 * 10 10_CRESTLINE(DDR2) 70 Debug CONN. 11 11_CRESTLINE(PWR)

IT8511TE

Abstract: asus 6C720 AC_IN_OC 498C0 IT8511 R5538 ALC660 U5403 ICS9LPR363AGLFT
Contextual Info: 5 01 D B A 61 02 System Setting 62 USB CONN * 63 * 04 04_CPU-Merom HOST 64 ISA ROM 05 05_CPU-Merom(PWR) 65 SPI ROM 06 * 66 LED 07 07_CRESTLINE(HOST) 67 * 08 08_CRESTLINE(DMI & CFG) 68 DC & BAT IN 09 09_CRESTLINE(GRAPHIC) 69 * 10 10_CRESTLINE(DDR2) 70 Debug CONN.

balanced frequency discriminator

Abstract: CLOCK GENERATOR 10HZ piezo disc transducer Piezo Audio Transducers Plessey ZN488E 14Hz electromagnetic pulse generator Ceramic resonator 7220S13
Contextual Info: P L E S S E Y SEMICONDUCTORS p 7220513 D0 0c1244 7 PLESSEY Sem iconductors. ZN488E T-7S-07-// TONE RINGER G EN ERA L DESCRIPTION F EA TU R ES Full rectifier bridge for direct operation from ringing supply Balanced output for transducers electro m agnetic

s15151

Contextual Info: Si8466EDB www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) MAX. ID (A) a, e 0.043 at VGS = 4.5 V 5.4 0.046 at VGS = 2.5 V 5.2 0.060 at VGS = 1.5 V 4.6 0.090 at VGS = 1.2 V 3.0 MICRO FOOT 1 x xxx xx

Contextual Info: Si8461DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) a, e 0.100 at VGS = -4.5 V -3.7 0.118 at VGS = -2.5 V -3.4 0.140 at VGS = -1.8 V -3.1 0.205 at VGS = -1.5 V -2 VDS (V) -20 Qg (TYP.) 1 x xxx xx

S2512NH

Abstract: S4014NK S2514NH 2205
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number Manufacturer VOAM V IT Max (A) ITSM (A) lOT Max (A) VaT Max (V) lOAM (A) dv/dt (V/ul) Max Operating Temperature (I) (OC) tg Min Max Package Style SeRs, VDRM >= 800 V (Cont'd) 5 10 T12FBOOUDL T12FBOOUDM

Piezo Audio Transducers

Abstract: balanced frequency discriminator 5V power supply using bridge rectifier of a bridge rectifier IC
Contextual Info: P L E S S E Y SEMICONDUCTORS ^ 7220513 0 0 0 c1244 7 PLESSEY S em ico n d u cto rs. ZN488E T-7S-D7-// TONE RINGER GENERAL DESCRIPTION FEATURES Full rectifier bridge for direct operation from ringing supply Balanced o u tp u t fo r transducers e le ctrom ag ne tic

Contextual Info: Solderless splices WINDOW TYPE BUTT Non-insulated 5 >- 3 >- 3 >- 22 to 16 0.25 to 1.65 C W -1 .2 5 1 4 .7 (.579) 3 .3 (.13 0) 1.7 (.06 7) 16 to 14 (1.04 to 2.63) C W -2 1 4 .7 (.57 9) 4 .0 (.157) 2 .3 (.09 1) 12 to tO (2.63 to 6.64) C W -5 .5 1 4 .7 (.57 9)

t 150-1 tube brown boveri

Abstract: triode T 150-1 brown boveri 480 t 150-1 tube brown T150 T150-1 oscillateur t150 Scans-001805 tube brown boveri TRANSF
Contextual Info: Strahlungsgekühlte Triode Radiation-Cooled Triode Triode refroidie par radiation T 150-1 9 H auptdaten Q u ick Reference D ata Caractéristiques principales Pa max V a max la max *P 0 max f max 200 3 400 740 100 W kV mA W MHz "K lasse C, HF, unm oduliert

t1430

Abstract: B78311P7586A005 T2089 B78311P6379A005 Y778 Y744 B78311 y747 T1627 Y746
Contextual Info: Inductive Components Product Family Name Material Data Sheet PTH Transformer EF20 B78311xxx Date 08.05.2007 Version 03 Construction Element Material group Materials CAS if applicable mass [weight-%] min typical Active Part max Sum [%] Traces 53.00 Ceramic

Contextual Info: Package Information www.vishay.com Vishay Siliconix MICRO FOOT : 4-Bumps 1 mm x 1 mm, 0.5 mm Pitch, 0.286 mm Bump Height 4x Ø b1 S D G 4x 0.30 to 0.31 (Note 3) Solder mask-0.4 s e e XXXX XXX S D Mark on backside of die s e e D Recommended land pattern

Contextual Info: Si8902AEDB www.vishay.com Vishay Siliconix N-Channel 24 V D-S MOSFET FEATURES PRODUCT SUMMARY 24 • TrenchFET power MOSFET RS1S2 (Ω) Max. IS1S2 (A) a 0.028 at VGS = 4.5 V 5.9 • Small 2.4 mm x 1.6 mm outline 0.029 at VGS = 3.7 V 5.8 • Thin 0.6 mm max. height

Contextual Info: Si8469DB www.vishay.com Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY -8 • TrenchFET power MOSFET RDS(on) (Ω) ID (A) a, e 0.064 at VGS = -4.5 V -4.6 0.076 at VGS = -2.5 V -4.2 0.115 at VGS = -1.5 V -3.4 0.180 at VGS = -1.2 V -1.2

Contextual Info: Tape Information www.vishay.com Vishay Siliconix 4 see note 1 Ø 1.5 2 ± 0.05 (see note 4) + 0.1 0.0 A Bo 5.5 ± 0.05 0.3 ± 0.05 Ko Ao 12 ± 0.3 8 1.75 ± 0.1 Carrier Tape for MLP55 A 0. 25 SECTION A-A R0 .25 Version AO BO KO -1 5.25 5.25 1.10 Notes 1. 10 sprocket hole pitch cumulative tolerance ± 0.2 mm.

Contextual Info: Package Information www.vishay.com Vishay Siliconix MICRO FOOT : 6-Bump 1.5 mm x 1 mm, 0.5 mm Pitch, 0.250 mm Bump Height S S S G e XXXX D s XXX D D s 6x Ø b1 s Mark on Backside of Die e e s E 6x Ø 0.24 to 0.26 (Note 3) Solder mask ~ Ø 0.25 C NOTE 5

Contextual Info: Si8410DB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) MAX. ID (A) a 0.037 at VGS = 4.5 V 5.7 0.041 at VGS = 2.5 V 5.4 0.047 at VGS = 1.8 V 5.0 0.068 at VGS = 1.5 V 4.2 Qg (TYP.) S 3 1 m m m 1m

Contextual Info: Crimping tools/machines Hydraulic Tools BCT, YPT A p p lica b le term inals/ splices N om inal size 0.5 to 14 term inals/splices B attery o p erated typ e T ool M odel No.: B C T -0 5 1 4 D im ensions: 25 5 m m (10.0") L x 241 m m (9.5") H x 6 4 m m (2.5") W