T143 Search Results

fet MARKING MHp

Abstract: sot143 code marking MS FET marking code marking ANs marking L1 fet BF996S
Contextual Info: BF996S PHILIPS INTERNATIONAL 5 bE D 711002b D 0 3 l+D7û ÖTß • PHIN F O R D E T A IL E D IN F O R M A T IO N SEE T H E L A T E S T ISSUE OF H A N D B O O K SC07 O R D A T A S H E E T T - 35-27 SILICON N-CHANNEL DUAL GATE MOS-FET D e pletion ty p e fie ld -e ffe c t tra n sisto r in a plastic SO T143 m icro m in ia tu re envelope w ith source and

MAX17016

Abstract: TSW 4250 56DL
Contextual Info: 19-0739; Rev 1; 2/10 KIT ATION EVALU E L B AVAILA Single Quick-PWM Step-Down Controller with Dynamic REFIN Ordering Information PART PKG CODE PIN-PACKAGE TOP MARK MAX8792ETD+T 14 TDFN-EP* 3mm x 3mm T1433-1 ADC Note: This device is specified over the -40°C to +85°C operating

marking CODE M92

Contextual Info: • bbS3T31 0023blfi a n ■ APX BF992 N AUER PHI LIP S/ DIS CR ETE L7E D _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 m icrom iniature envelope w ith source and substrate interconnected. T his M O S-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.

T1431

Abstract: GR-253-CORE V23832-R411-M1 V23832-T1431-M1
Contextual Info: V23832-T1431-M1 Parallel Optical Link Transmitter: PAROLI 2T Tx AC, 2.7 Gbit/s V23832-R411-M1 Parallel Optical Link Receiver: PAROLI®2T Rx AC, 2.7 Gbit/s Preliminary Dimensions in mm PAROLI 2T Tx PAROLI 2T Rx • Transmission data rate of up to 2700 Mbit/s per channel,

BF991

Abstract: 0R4S fet dual gate sot143 sot143 code marking MS sot143 Marking code MS
Contextual Info: b3E » • b b 5 3 ^ 4 □□743DA T3G « S IC 3 NAPC/PHILIPS SEniCOND BF991 _ A_ FOR D E T A IL E D IN F O R M A T IO N SEE T H E LA TE S T ISSUE OF H A N D B O O K SC07 OR D A T A S H E E T SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 microminiature envelope w ith source and

Contextual Info: 19-1040; Rev 0; 10/07 KIT ATION EVALU E L B AVAILA Single Quick-PWM Step-Down Controller with Dynamic REFIN TOP MARK MAX17024ETD 14 TDFN-EP* 3mm x 3mm T1433-1 ADO Note: This device is specified over the -40°C to +85°C operating temperature range. +Denotes a lead-free package.

T1431

Abstract: GR-253-CORE V23832-T1431-M1
Contextual Info: V23832-T1431-M1 Parallel Optical Link Transmitter: PAROLI 2T Tx AC, 2.7 Gbit/s V23832-R421-M1 Parallel Optical Link Receiver: PAROLI®2T Rx AC, 2.7 Gbit/s Preliminary Dimensions in mm PAROLI 2T Tx PAROLI 2T Rx • Transmission data rate of up to 2700 Mbit/s per channel,

transistor d 1557

Abstract: BSS83 BR B6S M74 marking philips bss83 BSS83 M74
Contextual Info: • fc,b53em []D25fel2 bßS H A P X N AUER PHILIPS/DISCRETE BSS83 b?E D _ MOSFET N-CHANNEL ENHANCEMENT SW ITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SO T143 envelope and features a low ON resistance and low capacitances.

MAX17016

Abstract: 12v 1a smps circuit diagram SMPS 12V, 5V power integrations IRF7811W MAX1615 T633-2 450MV 330UF smps PCB diagram
Contextual Info: 19-1040; Rev 0; 10/07 KIT ATION EVALU E L B AVAILA Single Quick-PWM Step-Down Controller with Dynamic REFIN TOP MARK MAX17024ETD 14 TDFN-EP* 3mm x 3mm T1433-1 ADO Note: This device is specified over the -40°C to +85°C operating temperature range. +Denotes a lead-free package.

6cl8

Abstract: tetrode
Contextual Info: 5CL8 9CL8 6 C L 8 -5 C L 8 -9 C L 8 ET-T1434 Page 1 TRIODE-TETRODE 10-56 TUBES DESCRIPTION A N D RATING The 6CL8 is a miniature tube which contains a sharp-cutoff tetrode and a medium-mu triode in one envelope. Intended primarily for service as a com­ bined triode oscillator and tetrode mixer in VHF television tuners, the 6CL8

Contextual Info: 143.2MHz SAW Filter 9.8MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. T14303 Part Number: LB T14303 www.sipatsaw.com Features � For IF SAW filter � High attenuation � Single-ended operation �

BF996S

Abstract: marking ANs
Contextual Info: VllDÖSt. □□L.&Tlb EflQ IPHIN BF996S SILICON N-CHANNEL DUAL GATE MOS-FET D epletion ty p e fie ld -e ffe c t tran sisto r in a plastic SO T143 m icro m in ia tu re envelope w ith source and substrate interconnected and intended fo r U H F applications in television tuners.

MAX17016

Abstract: NEC-TOKIN America NEC 3552 FDS8670 FDS8690 MAX8792 6v 5a smps si4916
Contextual Info: 19-0739; Rev 1; 2/10 KIT ATION EVALU E L B AVAILA Single Quick-PWM Step-Down Controller with Dynamic REFIN Ordering Information PART PKG CODE PIN-PACKAGE TOP MARK MAX8792ETD+T 14 TDFN-EP* 3mm x 3mm T1433-1 ADC Note: This device is specified over the -40°C to +80°C operating

BF990AR

Contextual Info: • t.bS3T31 0G24737 TU' B A P X BF990AR b7E T> N AMER PHILIPS/DISCRETE SILICON N-CHANNEL DUAL GATE MOS-FET D epletion ty p e fie ld -e ffe c t tra n sisto r in a plastic SO T143R m ic ro m in ia tu re envelope w ith source and substrate interconnected, intended fo r U HF a p p lications, such as U H F television tuners and

T143-500-16

Abstract: SEMPO ELECTRONIC thyristor 12V 1A jm 60 ac thyristor Q 720 T143-500-4 T143-500-6 T143-500-8
Contextual Info: Ò143-500 Phase Control Thyristor Symbol Parameter ITAVM average on-state current ITRMS maximum RMS on-state current ITSM surge-current i2t i2t-value Type VRSM, VDSM VRRM , VDRM T143-500-4 T143-500-6 T143-500-8 T143-500-10 T143-500-12 T143-500-14 T143-500-16

SS MARKING CODE

Abstract: BF997 CJGL bg marking
Contextual Info: 7110fl£b 0 0 b a 7 n TTT MPHIN BF997 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 microminiature envelope with source and substrate interconnected, intended for u.h.f. and v.h .f. applications, such as u .h .f./v.h .f. television

BF989

Abstract: sot143 code marking MS bg marking
Contextual Info: • bbSB^l DD2M73D bT4 H A P X N AMER PHILIPS/DISCRETE BF989 b?E » J V_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 microminiature envelope w ith source and substrate interconnected. This M O S-FET tetrode is intended for use in u.h.f. applications in television

diode smd marking code 421

Abstract: marking s4 BBY62 Philips diode 16T MARKING DIODE marking S4 04 marking code LA SMD marking s4 diode smd marking code fj BBY62 "Variable Capacitance Diode"
Contextual Info: b'lE T> N AMER PHILIPS/ DISCRETE m ^33*131 Q02fc.453 223 « A P X Philips Sem iconductors Product specification Double variable capacitance diode DESCRIPTION BBY62 Q UICK REFERENCE DATA The BBY62 is a double variable capacitance diode in a m icrom iniature SO T143 envelope. It

BF994S marking code

Abstract: BF994S
Contextual Info: I I t.3E D • 1,1^3^24 G Ü 7 4 3 1 0 «SIC3 BF994S A napc/philips sehicond FO R D E T A IL E D IN F O R M A T IO N SEE T H E L A T E S T ISSUE O F H A N D B O O K SC07 O R D A T A S H E E T SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 microminiature envelope with source and

"T2D"

Abstract: free download transistor data sheet T2D 79 T2D 80 t2d diode T2D 79 diode SMBus diode T2D timing diagram Transistor Data Book
Contextual Info: 82371AB PCI ISA IDE Xcelerator PIIX4 28.0 SMBus Timing Diagrams Figure 79. SMBus Timing t2e t2c t2d CLK t142 t145 t143 t146 t2b t144 Data smbtm_2.vsd t141 Figure 80. SMBus Timeout timing Start Stop t148 CLKack t149 CLKack t149 SMB CLK SMB DATA smbusto.vsd

MAX17016

Abstract: MAX8792ETD T MAX8792 FDS8670 FDS8690 ultrasonic sensor 200khz
Contextual Info: 19-0739; Rev 0; 1/07 KIT ATION EVALU E L B AVAILA Single Quick-PWM Step-Down Controller with Dynamic REFIN Ordering Information PART PKG CODE PIN-PACKAGE TOP MARK MAX8792ETD+T 14 TDFN-EP* 3mm x 3mm T1433-1 ADC Note: This device is specified over the -40°C to +80°C operating

free transistor bs 200

Abstract: marking BS mosfet FET MARKING CODE BF991 G2S-50 transistor BF991
Contextual Info: I • 711008b 00bß7Q5 MTS H P H I N BF991 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 microminiature envelope w ith source and substrate interconnected. This M O S-FET tetrode is intended fo r use in v.h.f. applications, such as v.h.f.

Contextual Info: GaAs 15 dB MMIC FET Voltage Variable Attenuator In SO T143 DC-2 GHz AF002N2-32 Features • Single Voltage Control ■ Low Cost ■ Small SOT 143 Package ■ 15 dB Range ■ Very Low DC Dissipation ■ Easily Adapted for Positive Control ■ Non-Reflective

Contextual Info: V23832-T1431-M1 Parallel Optical Link Transmitter: PAROLI 2T Tx AC, 2.7 Gbit/s V23832-R411-M1 Parallel Optical Link Receiver: PAROLI®2T Rx AC, 2.7 Gbit/s Preliminary Dimensions in mm PAROLI 2T Tx PAROLI 2T Rx • Transmission data rate of up to 2700 Mbit/s per channel,