T1303 Search Results

800 watts audio amplifier

Abstract: general electric
Contextual Info: m 6897 6897 BM CmOM CS ET-T1303C Page 1 PLANAR TRIODE 12-61 DESCRIPTION A N D RATING^ FOR G R O UN DED-G RID OSCILLATOR A N D AM PLIFIER SERVICE M etal and Ceramic Low Interelectrode Capacitances High Transconductance Shock Resistant 100 W atts Plate Dissipation

Contextual Info: SUD20P15-306 Vishay Siliconix P-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) () Max. ID (A) 0.306 at VGS = - 10 V - 8.1 0.312 at VGS = - 8 V -8 0.335 at VGS = - 6 V - 7.7 Qg (Typ.) 6.2 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Contextual Info: SUU09N10-76P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. ID (A) 0.076 at VGS = 10 V 9d 0.096 at VGS = 6 V 9d Qg (Typ.) 8.5 TO-251 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

C-CUBE CL450

Abstract: CL9100
Contextual Info: C L 4 5 0 MPEG V id e o D e c o d e r U s e r’s M a n u a l % C-Cube Microsystems • IVbM EbT 00DQ4Ô0 flbE ■ C-Cube Microsystems reserves the right to change any products described herein at any time and without notice. C-Cube Microsystems assumes no responsibility or liability arising from the use of the prod­

c2315

Abstract: IC401B C2068 R1962 asus mcp 430 nvidia C1567 PJP5403 C2061 C51MV MCP51
Contextual Info: A B C D E T13M SCHEMATIC Revision 1.1 Content PAGE 2 3 4 5 PAGE SYSTEM PAGE REF. 1 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 AMD S1 CPU 1 -HT&MISC AMD S1 CPU(2)-DDRII

SUD50P04-08

Contextual Info: SUD50P04-08 www.vishay.com Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -40 RDS(on) () ID (A) 0.0081 at VGS = -10 V -50 d 0.0117 at VGS = -4.5 V -48 d Qg (TYP.) 60 • TrenchFET power MOSFET • 100 % Rg and UIS tested

Contextual Info: IRLR014, IRLU014, SiHLR014, SiHLU014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) () VGS = 5.0 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single D DPAK (TO-252)

Contextual Info: SUD50N04-16P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a, c 0.016 at VGS = 10 V 20 0.018 at VGS = 4.5 V 20 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 15.6 nC COMPLIANT

Contextual Info: IRFR120, IRFU120, SiHFR120, SiHFU120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single DESCRIPTION

Contextual Info: SUD45P03-09 Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0087 at VGS = - 10 V - 45d 0.0150 at VGS = - 4.5 V - 32 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: SUD50N02-06P Vishay Siliconix N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) (Ω) 20 ID (A) 0.0060 at VGS = 10 V 26 0.0095 at VGS = 4.5 V 21 • • • • • TrenchFET Power MOSFET 175 °C Junction Temperature PWM Optimized for High Efficiency

Contextual Info: IRFR010, SiHFR010 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration Single DESCRIPTION D The power MOSFET technology is the key to Vishay’s

Contextual Info: IRFR9014, IRFU9014, SiHFR9014, SiHFU9014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) () VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S DPAK

Contextual Info: SUD25N15-52 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.052 at VGS = 10 V 25 0.060 at VGS = 6 V 23 • • • • • TrenchFET Power MOSFET 175 °C Junction Temperature PWM Optimized

09-D2

Abstract: RGB565 to rgb888 epson 16F8H T-1228 S2D13719 T-1227 Casio 1026 casio tft T14-22 T1205A
Contextual Info: S2D13719 Mobile Graphics Engine Hardware Functional Specification Document Number: X59A-A-002-01 Status: Revision 1.2 Issue Date: 2008/10/27 SEIKO EPSON CORPORATION 2008. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in

Contextual Info: IRFR024, IRFU024, SiHFR024, SiHFU024 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration Single D DPAK (TO-252)

Contextual Info: IRFR020, IRFU020, SiHFR020, SiHFU020 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 60 RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration Single D DPAK (TO-252)

Contextual Info: SUD50N10-18P Vishay Siliconix N-Channel 100 V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 100 0.0185 at VGS = 10 V 50 48 nC a TO-252 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:

Contextual Info: SiHD6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.6 48 Qgs (nC) 6 Qgd (nC) 11 Configuration

Contextual Info: SiHD5N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness

Contextual Info: IRFR014, IRFU014, SiHFR014, SiHFU014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D DPAK (TO-252)

Contextual Info: IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

Contextual Info: 10 BASE-T Transformers Dual SMD/DIP Available with Common Mode Choke Schematic 16 Pin Dual with Common Mode Choke • High Isolation 2000Vrms Schematic 16 Pin Dual • Fast Rise Times • Meets ECMA Requirements • IEEE 802.3 Compatible 10BASE 2 , 10BASE 5, & 10BASE T