T12 SMD Search Results

Contextual Info: Think o f F re q u e n cy Think o f s = = = ? • SMD KHz Crystals 1.6 x 1.0 x 0.5 max mm 9H T12 Series com e visit our site http://www.txccrystal.com Features ■2 pads surface mount package. ■Application for NB, Smart Phone, variety of compact portable consumer

NEC U574

Abstract: u574 M7-CSP32 C540 DIODE m7csp32 IC JRC 4029 M9-CSP64 d42b diode 2n3904 sot 23 SDRAM SODIMM CA0062
Contextual Info: 4 5 4 PCI RESET NC7S14 SC-70 5P 2 T12 RESUME RESET C632 U50 1 PRSTMSK0 2 4 1 19 1 3VDDS 5 4 3 3 PCIRST00 19,31,32,33,34,35,36,46 7 3 2 4 3 C 0.1uF 16V 80-20% 0402 Y5V U48A 1 NOT RESET AT SUSPEND 74LVX32MTCX FAIRCHILD

Contextual Info: V i s h ay I n t e rt e c h n o l o g y, I n c . Resistors - Variety of Case Styles, Sizes, Technologies I INNOVAT AND TEC O L OGY Vishay Sfernice N HN CERMET TRIMMERS O 19 62-2012 Single-Turn, Multi-Turn and SMD Cermet Trimmers Single-Turn Cermet Trimmers 63, T7, T73, T12, P8B, T11

SUCW10

Abstract: SUCW62412 smd g28 SUCW60512 g28 SMD SUCW101215 sucw1r50515 SUCW100515 SUCW60515 SUCW64815
Contextual Info: Ordering information On-board type SUCW1R5 SUC W 1R5 12 1 2 3 4 12 5 DC OUTPUT 6 P 7 1Series name 2Dual output 3Output wattage 4Input voltage 5Output voltage 6Mounting type B :SMD C :DIP 7Packing form Blank:Plastic cover P :Tray SMD type R MODEL MAX OUTPUT WATTAGE[W]

Contextual Info: Ordering information DC-DC Converters PCB Mount type SUW1R5 SU 1 W 1R5 12 2 3 4 12 5 DC OUTPUT 6 P 7 1Series name 2Dual output 3Output wattage 4Input voltage 5Output voltage 6Mounting type B :SMD C :DIP 7Packing form Blank:Plastic cover P :Tray SMD type

Contextual Info: Ordering information DC-DC Converters PCB Mount type SUCW1R5 SUC W 1R5 12 12 1 2 3 4 5 B 6 P 7 -O 8 1Series name 2Dual output 3Output wattage 4Input voltage 5Output voltage 6Mounting type B :SMD C :DIP 7Packing form Blank:Plastic cover P :Tray SMD type 8Optional

g28 SMD

Abstract: smd g28 sucw1r52412 SUCW1R50515 SUCW1R51215 SUCW1R50512 SUCW1R52415 T-12 1r5121 SUCW1R5
Contextual Info: Ordering information On-board type SUCW1R5 SUC W 1R5 12 1 2 3 4 12 5 DC OUTPUT P 7 1Series name 2Dual output 3Output wattage 4Input voltage 5Output voltage 6Mounting type B :SMD C :DIP 7Packing form Blank:Plastic cover P :Pallet SMD type R MODEL MAX OUTPUT WATTAGE[W]

SUCW30512

Abstract: SUCW31215 SUCW32415 76TYP SUCW30515 SUCW34815
Contextual Info: Ordering information On-board type SUCW3 SUC W 1 2 3 3 12 12 4 5 B 6 P 7 -O 8 1Series name 2Dual output 3Output wattage 4Input voltage 5Output voltage 6Mounting type B :SMD C :DIP 7Packing form Blank:Plastic cover P :Pallet SMD type 8Optional G :Capacitor between

SUW1R5

Contextual Info: Ordering information DC-DC Converters PCB Mount type SUW1R5 SU 1 W 1R5 12 2 3 4 12 5 DC OUTPUT 6 P 7 1Series name 2Dual output 3Output wattage 4Input voltage 5Output voltage 6Mounting type B :SMD C :DIP 7Packing form Blank:Plastic cover P :Tray SMD type

Contextual Info: Home > Product Details SUW1R5 Features High reliability : not built-in aluminum and tantalum electrolytic capacitor SMD mounting type and through-hole mounting type High efficiency synchronous rectifier circuit Built-in Over Current Protection RoHS Compliant

Contextual Info: Compact Isolated DC/DC Converter, 6W Cosel SUCW6 Series 1Series name 2Dual output 3Output wattage 4Input voltage 5Output voltage 6Mounting type B :SMD C :DIP 7Packing form Blank:Plastic cover P :Tray SMD type 8Optional G :Capacitor between Input and Output is

TMP6001

Contextual Info: ELECTRICAL CHARACTERISTICS: Inductance: L=51.84 uH±20% @ 200 KHz, 0.1V with 0 ADC L=26.6 uH Min @ 200 KHz, 0.1V with 1 ADC Resistance: DCR=0.127 ohms Max @ 25ºC 4 FEATURES: 1 3 1 4 2 3 High power density Low EMI radiation and high efficency 2 SMD style Switch power supply, TV, MNT, other 3C inductries.

smd diode t4

Abstract: T4 diode smd DIODE SMD T5 resistor pack diode smd J3 smd diode T3 LED diode 100nF, SMD SMD diode t4 t6 smd diode J5
Contextual Info: Bill of materials Designator Part Tape Description RR1 10K X 4 SMD RESISTOR PACK 1206 FORMAT RR2 10K X 4 SMD RESISTOR PACK 1206 FORMAT RR3 1K X 4 SMD RESISTOR PACK 1206 FORMAT RR4 10K X 4 SMD RESISTOR PACK 1206 FORMAT RR5 47KX4 SMD RESISTOR PACK 1206 FORMAT

FCK2A

Contextual Info: SIEMENS 16 MBit Synchronous DRAM • High Performance: -8 /cK MAX • HYB 39S16400/800/160CT-8/-10 125 • -10 Units • Automatic and Controlled Precharge Command 100 MHz ?CK3 8 10 !AC3 6 ?CK2 10 12 ns ?AC2 6 8 ns 7 Multiple Burst Read with Single Write

temic 80C32

Abstract: mmu ericsson MA31750 processor architecture MA31750 80C32 Harris Semiconductor IDT39C60 65656F 29C516E microcontroller radiation hard 80C32E
Contextual Info: ANM052 Radiation Tolerant SRAM for SPACE Applications Introduction The purpose of this document is to analyze the selection criteria for memory chips to be used in Spacecraft computers. A general trend is to implement more autonomous functions in Spacecraft, making use of increased

cbx smd code

Abstract: SMD marking code ax2 PC100-222 PC133-333 P-TSOPII-54 smd marking T22
Contextual Info: HYB 39S64400/800CT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • High Performance: • Full page (optional) for sequential wrap around • Multiple Burst Read with Single Write Operation -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns • Automatic and Controlled Precharge

Contextual Info: HYB39S16400/800/160CT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 12 ns tAC2 6 8 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature

P-TSOPII-54

Abstract: Q67100-Q1838 Q67100-Q2781
Contextual Info: HYB 39S64400/800/160BT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns tAC3 5.4 6 ns

Contextual Info: HYB39S16400/800/160BT-8/-10 16MBit Synchronous DRAM SIEMENS 16 M Bit S yn c h ro n o u s DRAM A dvan ced In form atio n • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 13.3 ns tAC2 6 8 ns • Fully Synchronous to Positive Clock Edge

39S64160BT-8

Abstract: SMD MARKING T5 application of sequential circuit CAZ MARKING marking RBY
Contextual Info: HYB 39S64400/800/160BT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns tAC3 5.4 6 ns

CAY smd marking code

Abstract: smd marking T22 cbx smd code smd CAY 39S256800T-8 SMD MARKING T20 SMD MARKING T5 P-TSOPII-54 PC100-222-620 PC100-323-620
Contextual Info: HYB 39S256400/800/160T 256 MBit Synchronous DRAM Preliminary Information • High Performance: • • • • -8 -8B -10 Units fCK 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns tCK2 10 12 15 ns tAC2 6 7 8 ns • Multiple Burst Read with Single Write Operation

MA31750 processor architecture

Abstract: atmel 80C32 atmel edac atmel 2816 memory mmu ericsson MA31750 6T SRAM a8961 microcontroller radiation hard SMKS-29C516E
Contextual Info: ANM052 Radiation Tolerant SRAM for SPACE Applications Introduction The purpose of this document is to analyze the selection criteria for memory chips to be used in Spacecraft computers. A general trend is to implement more autonomous functions in Spacecraft, making use of increased

P-TSOPII-54

Abstract: caz smd PC133 registered reference design
Contextual Info: HYB 39S64400/800/160ET L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM Preliminary Datasheet • Automatic and Controlled Precharge Command • High Performance: -7 -7.5 -8 Units fCKMAX 143 133 125 MHz tCK3 7 7.5 8 ns tAC3 5.4 5.4 6 ns tCK2 7.5 10 10

SMD MARKING T20

Abstract: smd marking T22 MARKING A3 SMD MARKING CODE a09
Contextual Info: HYB 39S64400/800CT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • High Performance: • Full page (optional) for sequential wrap around • Multiple Burst Read with Single Write Operation -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns • Automatic and Controlled Precharge