T090 Search Results

T0900EA45A

Abstract: D-68623 IC-900A
Contextual Info: WESTCODE An Date:- 20 Sep, 2006 Data Sheet Issue:- 4 IXYS Company Insulated Gate Bi-Polar Transistor Type T0900EA45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V VCES Collector – emitter voltage 4500 VDC link Permanent DC voltage for 100 FIT failure rate.

Contextual Info: WIRELESS - Power Amplifier T0904 TX POWER MMIC Advanced Product Information Rev 7 900 MHz Band GSM GaAs Power Amplifier 1C DESCRIPTION The A W T0904 is a monolithic Power Amplifier 1C suited for GSM cellular telephone Applications FEATURES Single Supply

power supply dc 9 v

Contextual Info: W IRELESS-Receiver AWT906D TX POWER MMIC Advanced Product Information RevO 900 MHz Band DAMPS GaAs Power Amplifier 1C DESCRIPTION: The AW T0906X is a monolithic Power Amplifier suited for DAMPS/AMPS cellular telephone applications. FEATURES: High Output Power

AWT906

Abstract: AWT906D 40X7R T906D
Contextual Info: APPLICATION NOTE - AWT906 / AWT906D AWT906 / AWT906D Power Amplifier for AMPS / DAMPS INTRODUCTION This application note describes the use of ANADIGICS AW T0906 Single Supply, AMPS Band, Power Amplifier and ANADIGICS AW T906D (Single Supply, DAMPS Band, Power Amplifier).

Contextual Info: Data Sheet A W T0902X Ö N W I G I C TX POWER MMIC S Your GaAs IC Source Advanced Product Information Rev 2 900 MHz Band AMPS GaAs Power A mplifier IC DESCRIPTION The T0902X is a monolithic Power Amplifier suited for AMPS cellular telephone applications

T4302G

Contextual Info: V1.1 PART NO. CIRCUITS S P H d800-P t0102G f-0254-P S P H d800-P t0202G f-0254-P S P H d800-P t0302G f-0254-P S P H d800-P t0402G f-0254-P S P H d800-P t0502G f-0254-P S P H d800-P t0602G f-0254-P S P H d800-P t0702G f-0254-P S P H d800-P t0802G f-0254-P S P H d800-P t0902G f-0254-P

MJ 5030

Abstract: T0900TA52E
Contextual Info: Date:- 17 Jun, 2003 Provisional Data  Data Sheet Issue:- 2 Absolute Maximum Ratings VOLTAGE RATINGS   Insulated Gate Bi-Polar Transistor Type T0900TA52E MAXIMUM LIMITS UNITS Collector – emitter voltage 5200 V VDC link Permanent DC voltage for 100 FIT failure rate.

Contextual Info: T0904 TX POWER MMIC E hHhDIGICS A d van ced P roduct Inform ation Your GaAs IC Source Rev5 900 M Hz Band GSM GaAs Power Amplifier 1C DES C R IP TIO N T he A W T0904 is a monolithic Power Amplifier 1C suited for GSM cellular telephone Applications FEATUR ES

Contextual Info: E T0903 TX POWER MMIC m m b c s t Your GaAs IC Source Advanced Product Information Rev 5 900 M Hz Band ETACS GaAs Power Amplifier 1C DESCRIPTION The AW T0903 is a monolithic Power Amplifier suited for ETACS cellular telephone applications. n n FEATURES:

Contextual Info: Data Sheet L ^ M N v I G I C . ,„ c T0905X TX POWER MMIC S Y o u r Lt â A S I C S o u r c e Advanced Product Information Rev 3 900 MHz Band ISM GaAs Power Amplifier 1C DESCRIPTION The AW T0905X is a monolithic Power Amplifier suited for ISM cellular telephone applications.

Contextual Info: T0908 TX POWER MMIC „ * ^ „ Your GaAs lC Source A d va n ce d P rodu ct Inform ation Rev o 900 MHz Band GSM GaAs Power Amplifier 1C DESCRIPTION The AW T0908 is a monolithic Power Amplifier 1C suited for GSM cellular telephone Applications FEATURES •

Contextual Info: WIRELESS - Selection Guide E lWDIGICS' wireless ic selection guide WIRELESS PRODUCTS Power Amplifiers Fre q u e n c y P a r t# A W T 0904 A W T906 A W T 906D A W T0908 A W T 9 1 9 D * A p p licatio n M G S M A M P S z S u p p ly ( V M ode P out ( d )

Contextual Info: V1.1 PART NO. CIRCUITS SPH d900-Pt010 2 G f-0 3 0 0 -P SPH d900-P t0202G f-0300-P SPH d900-P t0302G f-0300-P SPH d900-P t0402G f-0300-P SPH d900-P t0502G f-0300-P SPH d900-P t0602G f-0300-P SPH d900-P t0702G f-0300-P SPH d900-P t0802G f-0300-P SPH d900-P t0902G f-0300-P

Contextual Info: WESTCODE An Date:- 30 Oct, 2008 Data Sheet Issue:- 1 IXYS Company Provisional Data Insulated Gate Bi-Polar Transistor Type T0900EB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.

SI9405DY

Abstract: 48vdc schematic diagram
Contextual Info: APPLICATION NOTE - T0903 T0903 Power Amplifier for ETACS Phone INTRODUCTION This application note describes the use of the ANADIGICS AW T0903 amplifier. The A W T0903 is specifically designed for ETACS handset applications. The 16 pin SOIC plastic package allows cellular phone manufacturers to reduce the

Contextual Info: APPLICATION NOTE - T0908 T0908 Power Amplifier for GSM Phones Introduction This application note describes the use of ANADIGICS AW T0908 Single Supply, GSM Band, Power Amplifier . The AW T0908 is specifically designed for GSM Cellular handset applications. The 28-pin SOIC package allows

Contextual Info: Date:- 6 May, 2014 Data Sheet Issue:- P1 Prospective Data Insulated Gate Bi-Polar Transistor Type T0900DF65A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 6500 V VCES Collector – emitter voltage Tj 25°C

Contextual Info: AWT906DX TX POWER MMIC Advanced Product Information RevO 900 MHz Band DAMPS GaAs Power Amplifier 1C DESCRIPTION: The AW T0906X is a monolithic Power Amplifier suited for DAMPS/AMPS cellular telephone applications. FEATURES: • High Output Power • High Efficiency

T0903

Abstract: L329
Contextual Info: E nimhgics , • •' '■ . - • .r: — ■’j Data Shee I _.a* d :gr -, _1—5 TX POWER MMIC Your GaAs 1C Source Advanced Product Information Rev 4 900 MHz Band ETACS GaAs Power Amplifier 1C DESCRIPTION The AW T0903X is a monolithic Power Amplifier suited for ETACS cellular telephone applications.

T0900EB

Abstract: ad 156 transistor D-68623 OF IGBT 2000A 2000V Westcode Semiconductors transistor T0900EB45A
Contextual Info: WESTCODE An Date:- 30 Oct, 2008 Data Sheet Issue:- 1 IXYS Company Provisional Data Insulated Gate Bi-Polar Transistor Type T0900EB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V VCES Collector – emitter voltage 4500 VDC link Permanent DC voltage for 100 FIT failure rate.

SUD50NP04-77P

Abstract: TO-252-4L 74439 complementary MOSFET TO252
Contextual Info: New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a Qg (Typ.) 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 0.040 at VGS = - 10 V -8 0.050 at VGS = - 4.5 V

intel drMOS 4.0

Abstract: marking 2x marking code D22 8 pin marking code D22 multiphase boost
Contextual Info: SiC778A Vishay Siliconix High Performance DrMOS – Integrated Power Stage DESCRIPTION FEATURES The SiC778 is an integrated power stage solution optimized for synchronous buck applications offering high current, high efficiency and high power density. Packaged in Vishay’s

Contextual Info: ALLEN A V I O N I C S INC S l4E ALLEN AVIONICS, INC. G5DSfl3fl 0 0 0 0 ^ 5 1 D7fl T> DIL 14 PIN SINGLE OUTPUT 3T DIL 14 PIN TRIPLE OUTPUT MECHANIC: SPECIFICATIONS: ‘ Operating temperature range 0 "C to + 70"C -55 °C to +125°C on request . • Supply voltage:5.0 ± 0.25VDC.

t310m

Abstract: T064M TB0720M GR-1089-CORE J-STD-020A TB0640M TB0900M TB3500M
Contextual Info: TB0640M - TB3500M 50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE UNDER DEVELOPMENT • · · · · · 50A Peak Pulse Current @ 10/1000ms 250A Peak Pulse Current @ 8/20ms 58 - 320V Stand-Off Voltages Oxide-Glass Passivated Junction Bi-Directional Protection In a Single Device