T0220FN Search Results

TO-220FN

Contextual Info: Magazine T0220FN code Magazine PVC material Polyvinyl chloride Package name Renesas code TO-220FN PRSS0003AB-A Previous code T220FN Maximum storage No. Maximum storage No. Maximum storage No. Packing form Transistor/Magazine Magazine/Inner box Transistor/Inner box

SB1335A

Abstract: 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041
Contextual Info: Transistors " 7aaa^ 0DD7^ bD*" RH" TO-220 •T0-220FP •TO-220FN •HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. T0-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

AC188

Abstract: 2SA1309 2N2907A-PL 2SA1273 2SA1797Q 2SA1538S 2SA1443-NEC DTA143ES mj15004-mot BCX52GEGSMD
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 Tp aH 3M C T O pb l PNP copTMpoBKa no HanpflweHMro Kofl: BFT92 2SB733 AC188 BC369 2SA1273 2SA1309 2SA608 2SA966 2SB774 BC328-25 BC558B BC559C BC858B BC858C BF324 2SA1357 2SA1431 2N2905A 2N2907A

T70 N03 412

Abstract: FS70SM FS10UM-2
Contextual Info: S h o r t F o rm D 3 t3 Powerex, Inc., 200 H lllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 10.0V Driver Voltage n-channel MOSFETs Electrical Characteristics Maximum Ratings, Tc = 25°C

transistor P 112

Abstract: transistor c 144 marking f5 sot-89 marking 149 A 144 transistor transistor 136 138 140
Contextual Info: Transistors Surface Mounted Leaded P ack ag es Available- -60 P ack ag es Available- -110 POWER MOSFET- -61 POWER MOSFET— -112 61 MPT • CPT F5 • PSD Transistors- 63 CPT • MRT • HRT • T0-220FP • TO-247

Contextual Info: m UBEX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 ShOTt Form Ddtd Selector Guide Discrete MOSFET - Medium Voltage (continued) FK Series MOSFETs (250 ~ 600V) Fast Recovery Diode (trr = 150nS) Maximum Ratings, Tc = 25°C

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

mosfet fs series

Contextual Info: • L O W VOLTAGE POWER MOSFET FS SERIES 2.5V DRIVE (CONTINUED) Electrical characteristics (TYP.) Type No. w FS5ASH-2 ★ FS5UMH-2 FSSVSH-2 FS5KMH-2 FSIOASH-2 FS10UMH-2 * * ★ ★ ★ Hr FStOVSH-2 FSIOKMH-2 FSIOSMH-2 1 v aas ' ★ ★ ★ ★ ★ ★ ★

2SB1185

Abstract: 2sb1569a 2sd2037 transistor
Contextual Info: Transistors TO-220 • T0-220FP • T0-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

Contextual Info: Transistors T0-220 • T0-220FP • TO-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

Transistor Arrays

Abstract: transistor SST 126 IMD6 transistor 136 138 140
Contextual Info: "Transistors Surface Mounted Leaded Packages Available-«> Packages Available-110 POWER MOSFET-112 POWER MOSFET- ei MPT • CPT F5 • PSD

2SC1740 transistor

Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN

marking code H8

Abstract: FS30UMJ-06 MP-3 Package MOSFET A20 N03
Contextual Info: m u a s * Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h O f t F O F /T i D â t d Selector Guide Discrete MOSFET - Low Voltage Trench Gate 4.0V Driver Voltage n-channel MOSFETs Max imum Ratings, Tc = 25°C Electrical Characteristics

FS10KM-3

Contextual Info: mNEREX S hO ft FOTITI D3td Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 10.0V Driver Voltage n-channel MOSFETs Maximum Ratings, Tc = 25°C Device Number

FS10SM-16A

Abstract: FS10SM16A FS10SM-16 mosfet 16a 800v FS10SM16 FS10SM14 FS7UM-16A FS7VS14A
Contextual Info: jwmrar Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 ShOft FOTITl Dâtd Selector Guide Discrete MOSFET - High Voltage FS-IV Series MOSFETs (700- 800V) Maximum Ratings, Tc = 25°C Device 20 VDSS Electrical Characteristics

Contextual Info: mNEHEX ShOft FOTITI DStS Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 2.5V Driver Voltage n-channel MOSFETs Maximum Ratings, Tc = 25°C Device to Pd

Contextual Info: Packages Available Unit : mm FTL FTR % tf 0.65±0. I | ^0.5 5±0 j 2.54 2.54 . 0.45±Q. I (1) Emi’ter (2) Collector (3) Bas ? (1) Emitter (2) Collector (3) Base ATV ATR 0_. 65 Max. ü (2> - ) ! 14 1 ° 0.5 + 0 . 1 +1 : 3. 65 > (3) ]( 2) ! 0 . 55 + 2.54 2.54

2SK2540

Abstract: 2SK2294
Contextual Info: Transistors/Leaded Type Characteristics MOS FET 1. Can be used with automatic placement machines. Available in various packages with taping for automatic placement. 2. MOS FETs operating from 4 volts These MOS FETs can be driven directly by an IC, significantly reducing the number of components buffer transistors .

transistor D 2394

Abstract: 2SD2576
Contextual Info: 2SD2167 2SD2394 / 2SD2576 Transistors I Power Transistor 31 ± 4 V , 2A 2SD2167 •F e a tu re s 1 ) Built-in zs n e r diode betw een collector and base. 2 ) Z en er diode has low voltage dispersion. 3 ) Strong protection aga inst reverse pow er surges due to low loads.

Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Short Form Data Selector Guide Discrete MOSFET - Low Voltage Trench Gate 4.0V Driver Voltage n-channel MOSFETs Maximum Ratings, Tc = 25°C Device V DSS •d Pd Number Electrical Characteristics

fs10km

Abstract: mosfet fs series FS10KM-3
Contextual Info: • L O W VOLTAGE POWER MOSFET FS SERIES 1 OV DRIVE (CONTINUED) Max. ratings POWER DEVICES Type No. Voes (V) FS5AS-2 k FS5UM-2 FS5VS-2 FS5KM-2 FS10AS-2 FS10UM-2 FS10VS-2 FS10KM-2 FStOSM-2 FS30AS-2 FS30UM-2 FS30VS-2 FS30KM-2 FS30SM-2 FS50UM-2 FS50VS-2 FS50KM-2

Contextual Info: Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h o rt FO D TI D 3 t3 Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 10.0V Driver Voltage p-channel MOSFETs Maximum Ratings, T, = 25°C Electrical Characteristics

FS3KM18A

Abstract: MOSFET 900V TO-220 FS10SM18A fs7vs18a FS7KM-18 18-A
Contextual Info: jwmrar Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 StlOft FOMT! DSt3 Selector Guide Discrete MOSFET - High Voltage (continued) FS-IV Series MOSFETs (900V) Maximum Ratings, Tc = 25°C Device VDSS b PD ^th(ch-c) Electrical Characteristics

2SC2030

Abstract: OTB-122 28C32 DTD143EF DTC143EVA BUK 155 DTD114EF 2SC337 2SD18 TV6,5
Contextual Info: The Class and Basic Ordering Units for Standard and Semi-standard Products To make it easier for the customer to select the type of product best suited to specific applications, we offer transistors in three types : 1 standard, (2 ) semi­ Package FTR 2SA785