T01ERANCING Search Results

Contextual Info: 0PA131 OPA2131 OPA4131 BURR - BROW N General Purpose FET-INPUT OPERATIONAL AMPLIFIERS FEATURES OPA131 • FET INPUT: lB = 50pA max • LOW OFFSET VOLTAGE: 750[iV max • WIDE SUPPLY RANGE: ±4.5V to ±18V • SLEW RATE: 10V/ps NC V+ Output • WIDE BANDWIDTH: 4MHz

til 31a

Abstract: h196 H199 IRHM7130 IRHM8130 EO 28b H202
Contextual Info: Data Sheet No. PD-9.707A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7130 o r IRHM8130 N-CHANNEL MEGA RAD HARD 100 Volt, 0.18Q, MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs

AN780a

Abstract: MOC 3063 APPLICATION NOTE AN-780A moc opto triac motorola an780a MAC3060-8 triac driver opto application note 2 amp triac driver opto OPTO TRIAC moc MOC3060 and applications
Contextual Info: MOTOROLA SC -C D I0D ES/0PT03- 71 DE J b 3 h 7 E S 5 GD73Dm 1 uraer this data sheet by MAC3060/D M OTOROLA S E I¥ ig C O E y D U C T O R TECHNICAL DATA T ria c s S ilic o n Bidirectional Triode T h yristo rs . . . d e s ig n e d fo r fu ll-w ave ac p o w e r control app lications, an d sp e cifically d e sig n e d to be

rectifier diode 6 amp 400 volt

Abstract: 340E-01 transistor 2 Amp 3 volt MJH16018 rectifier diode 20 amp 800 volt blocking diode 20 amp 1200 volt MUR30100E 200 Amp current 1000 volt diode 100 Amp current 1000 volt diode blocking diode 200 amp 1200 volt
Contextual Info: Order this data sheet by MUR30100E/D MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA TM Sw itchm ode Pow er Rectifier MUR30100E . designed for use in switching power supplies, inverters and as freewheeling diodes, these state-of-the-art devices have the following features:

T3D 87

Abstract: t3d 99 G-100 IRGMC50U
Contextual Info: International [^Rectifier PD-9.719A IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT D escription Product Sum m ary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

motorola AN938

Abstract: MRF567 mrf56
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF557 The RF Line 1.5 W 870 M H z RF LOW POWER TRANSISTOR NPN SILICON RF LOW POWER TRANSISTOR N P N SILICON . . . d e s ig n e d p rim a rily fo r w id e b a n d large s ig n a l p redrive r stages in the 800 M H z fre q u en cy range.

2N7219

Abstract: 555C IRFM240 JANTXV2N7219 2N7219 JANTX
Contextual Info: Data Sheet No. PD-9.555C INTERNATIONAL RECTIFIER I« R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM840 8N7S19 JANTX2N7219 "‘ JANTXV2N7219 N-CHANNEL [REF: M IL-S-19500/5S6] Product Summary 200 Volt, 0.18 Ohm HEXFET The HEXFET® technology is the key to International

QJ50

Abstract: TRANSISTOR MOSFET K 1249 IRFI064 LS51 BYL3
Contextual Info: Data Sheet No. PD-9.876 I«R INTERNATIONAL RECTIFIER AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFI064 N-CHANNEL Product Summary 60 Volt, 0.017 Ohm HEXFET The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

MOC5008

Abstract: MOC5007 MOC5009
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M O C 5007 M O C 5008 M O C 5009 6 -P in D IP O p to is o la to rs Logic Output . . . gallium arsenide IRED optically coupled to a high-speed integrated detector w ith S chm itt trig ger output. Designed for applications requiring electrical isolation, fast

transistor KJJ

Abstract: H11A41 VDE0860 H11A1 VDE0113 VDE0160 VDE0832 VDE0833
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA H11A1 thru H11A5 6-P in D IP O p to is o la to rs Transistor Output These device s co n s is t o f a g a lliu m a rsen id e in fra re d e m ittin g d io d e o p tic a lly c o up le d to a m o n o lith ic s ilic o n p h o to tra n s is to r detector.

6.5S5

Abstract: 5S51 ely transformers I282 A IRFM054 SS452 DD113
Contextual Info: Data Sheet No. PD-9.709A INTERNATIONAL RECTIFIER l O R j AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMQ54 N-CHANNEL 60 Volt, 0.027 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power M O SFE T transistors.

HFA45HI120C

Abstract: 3108 DIODE case 19j 19j case 0u50 transistor k31
Contextual Info: International [^Rectifier HEXFRED P D -2 .3 7 5 Provisional Data Sheet HFA45HI120C Features: Major Ratings and Characteristics Characteristics — — — — — — — — — Units 1200 V 'F AV 28 A trr (per leg) 135 ns Qrr (per leg) 675 nC Ir r m (per leg)

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

MRF458

Abstract: K 2645 transistor transistor d 2645
Contextual Info: 1EE D I b3b?E54 MOTOROLA MOTOROLA SC 0aö7fe,73 1 | X S T R S /R F _ SEMICONDUCTOR TECHNICAL DATA MRF458 T h e R F L in e 80 W—30 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . designed fo r power am plifier applications in com m erical and amateur radio equipm ent to 30 M H z.

MAC3060-8

Abstract: MAC3060-X an-780a MOC3060 and applications TRIAC FT 12 motorola an780a "0580" TRIAC OPTO TRIAC moc3060 ac30602 AC3060
Contextual Info: 71 MOTOROLA SC -CDI0DES/0PT03- DE|b3b7ES5 GD73Qm 1 T - t MOTOROLA t — n u ra e r this data ' sheet by M A C3060/D SEi¥lECOE^DUCTOR TECHNICAL DATA Triacs Series Silicon Bidirectional Triode Thyristors . . . designed fo r full-w ave ac pow er control applications, and specifically designed to be

MT 1336

Abstract: PHOENIX CONTACT # 32 00 83 6
Contextual Info: ftm/voNic y - c o *» . SINGLE ROW DUALOBE Scoop-proof, Plastic or Metal shrouded Connectors Cryogenic -200PC to 225°C ACTUAL SIZE !L_ i : r! PLUG ! i Jl 09 position .210 .225 OPTION; Without Mounting Ears Coupling threads for 1mm screws.

MRF548

Abstract: MRF531 MRF548 MOTOROLA MRF542 MRF531 motorola LG CRT MRF534 motorola AN938
Contextual Info: I MOTOROLA SC XSTRS/R F 4bE D • b3b72S4 MOTOROLA 00^4730 2 ■MOTb - T - 3 3 - ¿ ^5 SEMICONDUCTOR TECHNICAL DATA MRF531 The R F Line HIGH FREQUENCY TRANSISTOR NPN SILICO N NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed for high voltage and high current f j switching appli­

2N3422

Abstract: 2N3442 2n4347 2N4327 C0440
Contextual Info: MOTOROLA SC XSTRS/R F 1EE D | b3b72SM G0â44b0 MOTOROLA r - 3 3 -/ 3 T | 2N3442 2N4347 SEMICONDUCTOR TECHNICAL DATA 5.0 AND 10 AMPERE POWER TRANSISTORS NPN SILICON HIGH-POWER INDUSTRIAL TRANSISTORS 1 2 0 ,1 4 0 V O L T S 1 0 0 ,1 1 7 W A T T S NPN silicon power transistors designed for applications in

hall marking code A04

Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
Contextual Info: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”

MRF515

Abstract: motorola MRF515
Contextual Info: I MOTOROLA SC XSTRS/R F MbE P • b3b725M MOTOROLA DGTH7n T ■ SEMICONDUCTOR TECHNICAL DATA T ■ flO T b 5 3 - Q 5 MRF515 The R F L in e 0.75 W - 470 M H z NPN S IL IC O N H IG H F R EQ U E N C Y T R A N SIS T O R HIGH F R EQ U E N C Y T R A N SIST O R

MJ10001

Contextual Info: MOTOROLA SC 12E D I b3b?SS4 GQflSGGT T | XSTRS/R F MOTOROLA ~7:~33'£t MJ10000 MJ10001 SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’ s D a ta Sheet 20 A M P E R E NPN SILICON POWER DARLINGTON TRANSISTORS SWITCHMODE SER IES NPN SILICON POWER DARLINGTON TRANSISTORS

TRANSISTOR tip122 CHN 949

Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Contextual Info: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.