T0044G4 Search Results

Contextual Info: I S 2 2 C ¡SSI 1 1 1 8 to 12 SEC VOICE ROM ADVANCE INFORMATION SEPTEMBER 1997 FEATURES • Voice length at: - 8 KHz sampling is 8 seconds - 6 KHz sampling is 10 seconds - 5 KHz sampling is 12.8 seconds • Silence compression saves memory • Four trigger pins, S1 to S4 for eight sections

MAX714

Contextual Info: IS5F ¡ IB 131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation ADVANCE INFORMATION JULY 1997 Industrial Temperature Operation 40°C to +85°C • High-Performance Read

Contextual Info: ISSI I S 9 3 C 4 6 - 3 _ | 2 § ! 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM a u g u s t 1995 FEATURES OVERVIEW • State-of-the-art architecture — Non-volatile data storage — Low voltage operation: 3.0V Vcc = 2.7V to 6.0V — Full TTL compatible inputs and outputs

DDD0444

Contextual Info: issr IS28F200BV/BLV 131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation ADVANCE INFORMATION NOVEMBER 1996 • Industrial Temperature Operation 40°C to +85°C

00hy

Abstract: HOA9 IS28F020 TGD4404
Contextual Info: ISSI IS28F020 262,144 x 8 CMOS FLASH MEMORY p r e l im in a r y SEPTEMBER 1995 FEATURES • High performance - 70 ns maximum access time • CMOS low power consumption - 30 mA maximum active current -100 maximum standby current • Compatible with JEDEC-standard byte-wide

24197

Abstract: FL003 T4423 BLV38
Contextual Info: ISSF fê * » V /B L V 131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY ADVANCE INFORMATION JULY 1997 • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • High-Performance Read Maximum Access Times

Contextual Info: I S 2 2 C 0 1 0 _ ^ ISSI % ONE-TIME-PROGRAMMABLE VOICE PROM PRELIMINARY SEPTEMBER 1995 FEATURES • Voice content stored in 4 sections at: - 8 KHz sampling is 8 seconds - 6 KHz sampling is 10.5 seconds - 5 KHz sampling is 12.8 seconds • Can operate at 3K to 16-11 KHz sampling

Contextual Info: 64K x 16 HIGH-SPEED ULTRA-LOW POWER CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES ADVAN^ LF1°9^ ATI0N DESCRIPTION • H igh-speed access tim e: 15, 20, 35, and 45 ns • CM O S low pow er operation — 40 mW typical operating — 90 \i\N (typical) standby • T T L com patible interface levels

Contextual Info: IS M 64K x 36 SYNCHRONOUS PIPELINED STATIC RAM ADVANCE INFORMATION JULY 1997 FEATURES DESCRIPTION • Internal self-timed write cycle The IS S IIS61SP6436 is a high-speed, low-power synchro­ nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,

24C02-1

Abstract: 24C02 IS24C02 IS24C02-3
Contextual Info: ISSI 2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM PRE LIM IN A R Y SEPTEM B ER 1995 FEATURES • • • • • • • • Low pow er C M O S — A c tiv e c u rre n t le s s th a n 2 m A — S ta n d b y c u rre n t le s s th a n 8 |aA L o w v o lta g e o p e ra tio n

Contextual Info: ISSI 262,144 x 8 CMOS FLASH MEMORY p r e l im in a r y SEPTEMBER 1995 FEATURES • High pe rfo rm an ce - 70 ns m axim um acce ss tim e • Flash electrical bulk chip-e ra se - O ne second typica l chip-e ra se • C M O S low p o w e r con sum p tion - 30 m A m axim um active curre nt

MG005-QA

Abstract: MG005 pin diagram of micro controller 89c52 intel 8052
Contextual Info: is m CMOS SINGLE CHIP 8-BIT MICROCONTROLLER with 8K x 8 FLASH MEMORY ADVANCE INFORM ATION M AY 1997 FEATURES G ENERAL DESCRIPTION • 80C52 based architecture The ISSI IS89C52 is a high-performance micro­ controller fabricated using high-density CMOS technology. The CMOS IS89C52 is functionally

IS62LV1024-45Q

Abstract: IS62LV1024-55Q 12130
Contextual Info: 128K x 8 LOW VOLTAGE AND POWER CMOS STATIC RAM NOVEMBER 1996 FEATURES DESCRIPTION • H igh-speed access tim e: 35, 45, 55, 70 ns The/557 IS62LV1024 is a low voltage and low power, 131,072word by 8-bit CMOS static RAM. It is fabricated using /5 5 /'s high-performance CMOS technology. This highly reliable pro­

Contextual Info: ESI IS22C011 8 to 12 SEC INSTANT VOICE ROM OCTOBER 1998 FEATURES • Voice length at: - 8 KHz sampling is 8 seconds - 6 KHz sampling is 10 seconds - 5 KHz sampling is 12.8 seconds • Four trigger pins, S1 to S4 for eight sections • SBT pin play-all or sequential play-all

Contextual Info: 256K x 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION JUNE 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer

ISSI 543

Contextual Info: ISSI I S 2 7 H C 5 1 2 65,536 X 8 HIGH-SPEED CMOS EPROM FEATURES DESCRIPTION • Fast access time: 45 ns The IS S IIS27HC512 is an ultra-high-speed 512K-bit Ultravio­ let Erasable CMOS Programmable Read-Only Memory. It utilizes the standard JEDEC pinout making it functionally

Contextual Info: 262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • S m artV oltage T echnology — 5V or 12V Program /Erase — 2.7V, 3.3V or 5V Read O peration • H igh-Perform ance Read M axim um Access Tim es — 5V: 60/80/120 ns — 3V: 110/130/150 ns — 2.7V: 120 ns

Contextual Info: ISSI IS22C120 16 to 20 SEC VOICE ROM ADVANCE INFORMATION SEPTEMBER 1997 FEATURES • Voice length at: - 8 KHz sampling is 16 seconds - 6 KHz sampling is 20 seconds • Silence compression saves memory • Four trigger pins, S1 to S4 for eight sections • SBT pin play-all or sequential play-all

Contextual Info: 128K x 8 LOW VOLTAGE AND POWER CMOS STATIC RAM NOVEMBER 1996 FEATURES DESCRIPTION • H igh-speed access tim e: 35, 45, 55, 70 ns The/557 IS62LV1024 is a low voltage and low power, 131,072word by 8-bit CMOS static RAM. It is fabricated using /5 5 /'s high-performance CMOS technology. This highly reliable pro­