T-75 HIGH VOLTAGE DIODE Search Results

DIODE LL4148

Abstract: MELF DIODE color bands LL4148 melf diode color
Contextual Info: 3Q T LL4148 REVERSE VOLTAGE FORWARD CURRENT Switching Diode 75 Volts 0.15 Amperes MINI MELFÍLL-3 4 Features • Silicon eltaxlal planar diode • High speed switching diode • 500mW bower dissipation Mechanical Data T • Cases:Min-MELF glass case • Polarity:Color band denotes cathode

BAW62

Abstract: FR 309 diode
Contextual Info: S ’ S’S - o z z . BAW62 HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a D O -35 envelope. The BAW 62 is prim arily intended for fast logic applications. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage VR max. 75 V Repetitive peak reverse voltage

B0004

Abstract: CDSV3-16-G CDSV3-56-G CDSV3-70-G CDSV3-99-G v50s
Contextual Info: COAICHII* Small Signal Switching Diodes CDSV3-99-G/ 70-G/ 5 6 -G /16G % Reverse Voltage: 75 Volts Forward Current: 200mA RoHS Device Features SO T-323 D es ig n ed fo r m ounting on sm all s urfa ce . High s p eed sw itching. 0.059 1.80 High m ounting cap ab ility, strong surge

Contextual Info: 2?QLôMb 0000175 ^1T 1,500 to 20,000 Volts 0.6 to 3 Amps. Standard Recovery SERIES HD O \ 1/4-28 Thread Modular • "Hi-BeP High Voltage Rectifier Assemblies Repetitive Peak Reverse Voltage HVCA Number Vrhm V Volt8 Avg.Forward Current Max. If a v m @ T c 75*C

CIL 1302

Abstract: cil 1305
Contextual Info: T E L E D Y N E COMPONENTS a*U7fe.aa ÜOÜbt.75 3 EflE D ECONOMY LINE CURRENT REGULATOR FIELD EFFECT DIODES XCTP1U AiC CIL-1300 thru CIL-1305 c m • CURRENT CONSTANT OVER WIDE VOLTAGE RANGE • HIGH SOURCE IMPEDANCE • CONNECT IN PARALLEL FOR HIGHER CURRENT

Contextual Info: t.ME D • Sfi7bbSl OGDTV'îS 007 « N X n MAXIM I N T E G R A T E D P R O D U C T S 19-3786; Rav 1; 9/92 / l / l / I X I / l / l High-Speed, Low -Voltage, M icropow er Op Amps D escrip tio n The MAX402/MAX438 require less than 75|iA of supply current while delivering 2MHz gain bandw idth with 7V/|xs

fairchild micrologic

Abstract: D9109 10-JK 9110 F 9109
Contextual Info: HIGH LEVEL LOGIC DIODE-TRANSISTOR MICROLOGIC. INTEGRATED CIRCUITS COMPOSITE DATA SHEET A FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRODUCT O'C TO 75*C TEMPERATURE RANGE GENERAL DESCRIPTION— The Fairchild High Level Logic Diode-Transistor Micrologic® Integrated Circuit

Contextual Info: HIGH SPEED ANALOG OUTPUT TYPE 8 PIN OPTOCOUPLER PS8602 PS8602L FEATURES DESCRIPTION_ • PS8602 and PS8602L are 8-pin high speed photocouplers containing GaAIAs LED on the input side and a P-N photo­ diode and a high speed amplifier transistor on the output side

VSK71

Abstract: vskt 71 diode T-71 thyristor battery charger circuit with notes thyristor battery charger VSKH vskt VSKN
Contextual Info: VSK.71. Series Vishay High Power Products ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 75 A FEATURES • High voltage • Industrial standard package • UL pending • Low thermal resistance • Compliant to RoHS directive 2002/95/EC

PFC BALLAST CONTROL IC

Abstract: IR2166 12v ballast ic ELECTRONIC BALLAST 12v diode 824 C 12 PH zener diode datasheet circuit diagram ballast 12v PD60198 MS-012AC 1N4148
Contextual Info: Data Sheet No. PD60198 revE IR2166 S & (PbF) PFC & BALLAST CONTROL IC Features • Programmable dead time • Internal ignition ramp • Internal fault counter • DC bus under-voltage reset • Shutdown pin with hysteresis • Internal 15.6V zener clamp diode on Vcc

DS1217

Contextual Info: Formosa MS Chip Zener Diode ZGFM5334 THRU ZGFM5378 List List. 1 Package outline. 2

1N4148 DL-35

Abstract: 1N4148 DL-35 PACKAGE DL4148 package R1200 R1200F R1500 R1800 R2000 R2500 R3000
Contextual Info: DIODES INC 3EE D • 20407=53 Qa003t.0 T BiDII HIGH VOLTAGE RECTIFIERS OPERATING/STORAGE TEMPERATURE RANGE -65°C to +150°C Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz PRV lo @ Ta Maximum Forward Voltage @ 2 5 °C T A |r Ifm vfm Trr

CV7040

Abstract: cv8790 OA202 equivalent BY 225 diode IS920 DO-35 silicon Rectifier diodes CV8617 CV7875 CV7332 10 35 DIODE
Contextual Info: Diodes and Arrays Hi Device Case Type Outline 1S111 1S113 1S120 1S121 1S130 1S131 1S132 1S134 1S920 1S921 1S922 1S923 1 S924 O A200 O A202 IN645 IN 646 IN647 BY401 BY402 BY403 BY404 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 D O-7 DO-7 DO-35 DO-35 DO-35 DO-35 D O-35 DO-7

X2G75ND06P1

Contextual Info: X2G75ND06P1 HIGH POWER NPT Low loss TYPE 2-PACK IGBT MODULE • CIRCUIT DIAGRAM 600V 75A PACKAGE : M1 ■ APPLICATIONS ■ FEATURES • Non Punch Through g NPT Technology gy • Fast & soft inverse CAL diodes • 10us short circuit capability • Positive VCE(on) temperature coefficient

M75N06

Contextual Info: MTP75N06HD Preferred Device Power MOSFET 75 A, 60 V, N−Channel, TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

CDSF4148

Contextual Info: SMD Switching Diode COMCHIP www.comchip.com.tw CDSF4148 High Speed Features Preliminary Designed for mounting on small surface. High speed switching. 1005 2512 High mounting capability, strong surge withstand, high reliability. Mechanical data 0.106(2.70)

CDSN4148

Contextual Info: SMD Switching Diode FormosaMS www.formosams.com CDSN4148 High Speed Features Designed for mounting on small surface. High speed switching. 1206 3216 High mounting capability, strong surge withstand, high reliability. 0.126(3.20) 0.118(3.00) 0.020(0.50) Typ

Contextual Info: VSKT71., VSKH71., VSKL71., VSKN71. Series Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 75 A FEATURES • High voltage • Industrial standard package • Low thermal resistance • UL approved file E78996

K375

Abstract: MKL series vai 27 lf OM35F120PB OM45L120PB OM50F60PB OM60L60PB 50F60 60L60
Contextual Info: OM6OL6OPB OM45L120PB Preliminary Data Sheet OM50F60PB OM35F12QPB DUAL IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High Current, High Voltage 600V And 1200V, Up To 75 Amp Dual IGBTs With FRED Diodes FEATURES • Includes Internal FRED Diode • Rugged Package Design

MTP75N05HD equivalent

Abstract: MTP75N05HD AN569
Contextual Info: MTP75N05HD Preferred Device Power MOSFET 75 Amps, 50 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy–efficient design also offers a drain–to–source diode with a fast recovery time. Designed for

diode SMD MARKING CODE ka2

Abstract: smd ka2 diode transistor kA2 smd BAS16TW
Contextual Info: Formosa MS SMD Switching Diode Array BAS16TW List List. 1 Package outline. 2 Features. 2

em 518 diode

Abstract: d507 M dp 502 t SW-45 ST333S TO-209AE
Contextual Info: Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK D-500 To Order Previous Datasheet Index Next Data Sheet Bulletin I25171/B ST333S SERIES Stud Version INVERTER GRADE THYRISTORS Features 330A All diffused design Center amplifying gate

355B

Abstract: diode 368b 1SMC5348 1SMC5349 1SMC5350 1SMC5351 1SMC5352 1SMC5388
Contextual Info: 1SMC5348 THRU 1SMC5388 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 5.0 Watts FEATURES l For surface mounted applications in order to optimize board space l Low profile package l Built-in strain relief l l l Glass passivated junction

CDSU4148

Contextual Info: SMD Switching Diode COMCHIP www.comchip.com.tw CDSU4148 Lead-free Device High Speed Features Designed for mounting on small surface. 0603(1608) Extremely thin/leadless package. 0.071(1.80) 0.063(1.60) High mounting capability, strong surge withstand, high reliability.