T S X 17 Search Results

2SK1535

Abstract: FP3V90 ITO-220
Contextual Info: HVXvU-X /\°7 -M 0 S F E T HVX S eries Pow er M OSFET ¡g S S X -f v+'s'J OUTLINE DIMENSIONS 2SK1535 Case [FP3V90 [Unit I mm] ITQ-220 4.6 * « 900V 3A • X * S * • x - i" C is s ) v? 2.7 m/KC2AO\/mM3COX'(yfy^WSi • Z - f "J 3• 'i’ y r t - s I <D©

Contextual Info: L M X 2 3 1 5, LM X 2320, LM X 2325 LM X2315/LM X2320/LM X2325 PLLatinum Frequency Synthesizer fo r RF PersonalCom m unications, LM X2325 2.5 GHz, LM X2320 2.0 GHz, LM X2315 1.2 GHz Te x a s In s t r u m e n t s Literature Number: SN AS101D OBSOLETE a l t Semiconductor

Contextual Info: LM 2483 LM2483 180V Triple Bias Clamp Te x a s In s t r u m e n t s Literature Number: SNOSA33B * O cto b e r 25, 2011 e x a s LM2483 In s t r u m e n t s 180V Triple Bias Clamp General Description Features T he L M 2483 d riv e r is an Integrated 18 0 V triple b ia s clam p

s22md1

Abstract: stk7404 STK760 S5KC20 AAI 6392 CE 470uf 400v stk740 ZD 103 ma RE1201 L78M12
Contextual Info: ¡ N O . 1639B S A M Y = O ^ m m w - = L - x 3167 \ x s X a ?^ « -tr. * « » , A - V tA 3 > t'.i" ? , 7 Í U Í . Jf- % ^ A v V T :R / / > f : i - ?i *s Í 7 ^ 3 > f 2 - y , ' / > ? • 7 * 0 -y 9 • / / ^ IflT / / ' *<£ ( I M S T ) r f t < & n f c ^ - í > v ^ > ^ J é > « r t r 7 - I C T * 1 / / '

Contextual Info: SM73304, SM73305 SM73304 SM73305 Dual and Single Precision, 17 MHz, Low Noise, CMOS Input Amplifiers with Enable Te x a s In s t r u m e n t s Literature Number: SNOSB98 I1 Texas In s t r u m e n t s Dual and Single Precision, 17 MHz, Low Noise, CMOS Input

AN303

Abstract: AN303 APPLICATION
Contextual Info: ic AN303 AN 303 V T R il^ lfl]/± IilS S X V T R N oise Suppressor Circuit • AU ü / D e s c r i p t i o n A N 303 t± , * 7 Unit i mm 15.0 ± 0 .3 6.0max - 3.0min. H i# i S / F e a t u r e s • AN303 ? 7 >-7‘EJi# x a — i ^ 3 y lH jaffifi-B X ESi# 75 0 h ' r ' + f l - ^ a i * 0 S *

lm 7407 buffer chip

Contextual Info: L M X 2 3 3 0 U , L M X 2 3 3 1 U ,LM X 2332U LMX2330U/LMX2331U/LMX2332U PLLatinum Ultra Low Power Dual Frequency Synthesizer forRF Personal Communications LMX2330U- 2.5 GHz/600 MHz, LMX2331U - 2.0 GHz/600 MHzLMX2332U -1.2 GHz/600 MHz T ex a s In s t r u m e n t s

74AS280

Abstract: 54ALS280 500NT
Contextual Info: TE X A S IN ST R -CLOGICJ fil ~Q§Qf723 T E X A S De| 0^1753 IN S T R LOGIC 00420^ S |~ Df- Y S ~/7 81 Ç 4 2 8 9 6 SN54ALS280, SN54AS280, SN74ALS280, SN74AS280 9-BIT PARITY GENERATORS/CHECKERS D2661, DECEMBER 1982 - REVISED MAY 1986 SN 54A LS2 80, SN 5 4 A S2 8 0 . . . J PA C K A G E

ti324

Contextual Info: STI324000C1 88-PIN CARDS 4M X 32 DRAM Card FEATURES Perform ance range: *RAC ^CAC *RC S T I3 24 000 C 1 -6 0 60ns 15ns 110ns S T I3 24 000 C 1 -70 70ns 20ns 130ns S T I3 24 000 C 1 -80 80ns 20ns 150ns The Simple Technology S TI324000C 1 is a 4M bit x 32 Dynamic

Contextual Info: Customer Information Sheet D R A W I N G No.: H 3 I 6 5 - X X S H E E T 2 OF 2 | SECTION IF IN D O U B T - AS K | NOT TO S C A L E | THIRD ANGLE PROJECTION | ALL D I M E N S I O N S IN m m A-A SPECIFICATION: MATERIAL: C O N T A C T S H E LL : B R A S S

Contextual Info: D R A W I N G No.: SHEET M52-040000PXX45 I OF I I IF IN D O U B T - AS K | c | NOT T O S C A L E I .27 CONTACT -#1.27 X TOTAL No. No. X |~ THIRD ANGLE PROJECTION ( TO T A L No. OF C O N T A C T S I ALL D I M E N S I O N S IN m m -I) 1.27 TYP 2 . 54 TYP OF C O N T A C T S ± 0 . 4 0

Contextual Info: F U J IT S U S E M IC O N D U C T O R I DATA S H E E T ¡ D S 0 5 -5 0 1 1 1 -1 E MCP Multi-Chip Package FLASH MEMORY & SRAM CM O S 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM o n ii / v , o t a t i p n a n il MB84V D2008-1o/MB84V D2009-1o • FEATURES

BB02-BE

Abstract: 70MM SELECTIVE15 1.27mm 10 pin box header
Contextual Info: C US TO M ER PRODUCT SPECIFICATION SH EE T BB02-BE BB02-BE 1.27mm X 1.27mm 0.05" X 0.05" B OX H E ADE R , T HROUGH HOLE, D U A L ROW, S T R A I G H T S P E C I FI C AT I O NS CURRENT RATING INSULATOR RESISTANCE DIELEC TRI C W I T H S T A N D I N G CONTACT RESISTANCE

AN7001

Abstract: SR flip flop IC panasonic FM tuner 7001 application pll U06E SR flip flop IC pin diagram fm mpx demodulator AM IF amplifier
Contextual Info: AN 7001 AN7001 X j U • m. í f a - t v X T S t e r e o Tuner S y ste m A m / D e s c r ip t io n U n i t : mm AN 7001 ± AM I F i f * ! , FM <n i f ifitf IC rtc I- T AM , FM ¡r> y & z_à< V $ Z i i f r , S E d ^ .^ Í Ü ^ i I i I iflW-C- è i 4$ iä /F e a tu r e s

LM12864LDA

Abstract: 128x64 M12864 806C DB513
Contextual Info: 93,0 N ote: *1, A V R 2 5 k t o 5 0 k m u s t be c o n n e c t e d e x t e r n a ly f o r C o n t r a s t C o n tro l, □ t h e r w i s e , e x t e r n a l LCD c o n t r a s t r e f e r e n c e s h o u l d be g i v e n t o VO, * 2 , LCD D i s p l a y T y p e : S T N - G r a y , P o s i t i v e , T r a n s f l e c t i v e

Contextual Info: C M O S PA R ALL E L F IR S T-IN /FIR S T-O U T FIFO 256 x 9-BIT & 512 x 9-BIT IDT7200S/L id t 720i s a /la FEATURES: DESCRIPTION: • First-In/First-Out dual-port memory The IDT7200/7201A are dual-port memories that utilize a spe­ cial First-In/First-Out algorithm that loads and empties data on a

Contextual Info: F U J IT S U S E M IC O N D U C T O R D A TA S H E E T AE1E MEMORY CMOS 4 x 1 Mx 1 6 B I T SYNCHRONOUS DYNAMIC RAM MB81F641642D-75/-102/-10 CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory DESCRIPTION The Fujitsu MB81 F641642D is a CMOS Synchronous Dynamic RandQtfi:AcG§SS Memory SDRAM containing

Contextual Info: ^ 5^*^ MMWA-EF METALLIZED POLYESTLR FILM CAPACITORS MMWA-EF^ jr,7sX ♦ # ft/FEATURES • i 5 HI * 5 it <D* I ' =i > x > -9- V t „ • a i r o S ji • Ic S t i f t t U L 9 4 V -0 £t „ [z & -p T I ' f <0 <D t ti r i's t X tK + '> i t £ m L T l' t

RCA-6417

Abstract: 15-watt audio amplifier rca tube 53 6417
Contextual Info: T h i s b u l l e t i n a ls o a p p l i e s toRCA-5763 which is id e n tic a l w i t h RCA—6 417 e x c e p t f o r i t s h e a t e r r a t i n g o f 6 .0 ± I 0 J v o l t s , 0 . 7 5 a m p e re . 6417 VHF BEAM POWER TUBE l t x High Transconductance High Power Sensitivity

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: <£> February1997 Revision 1.1 ~ D A T A S H E E T - ESA8UN324 2/4 -(60/70)(J/T)(G/S)-S 32MByte (8M x 32) CMOS EDO DRAM Module General Description The ESA8UN324(2/4)-(60/70()J/T)(G/S)-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module

Contextual Info: DP83848Q DP83848Q PHYTER Extended Tem perature Single Port 10/100 Mb/s Ethernet Physical Layer Transceiver Te x a s In s t r u m e n t s Literature Number: SN LS341A t DP83848Q Sem iconductor PHYTER Extended Temperature Single Port 10/100 Mb/s Ethernet Physical Layer Transceiver

MMW474

Contextual Info: * 9 5METALLIZED 4 X S/KU x z fll> 7 < II L a 'J T J 1* POLYESTER FILM CAPACITORS MMW-EF M M W - E F ^SERIES 'J - x • 4# ^/F E A T U R E S • gsmitttcD&&if$it±cD i'=i y ^ y y - v t o • U L 9 4 V -0 tC D T \ L t l ' i g £ 1 & lz @ tL T l'£ to • This capacitors provide self-healing.

Contextual Info: □P M DPS512X32V3 Dense-Pac Microsystems, Inc. CERAMIC 512K X 32 C M O S SRAM VERSA-STACK O PRELIMINARY DESCRIPTION: The D P S 5 1 2 X 3 2 V 3 “V E R S A - S T A C K " m odule is a r e v o lu t io n a r y n e w m e m o r y s u b s y s t e m u s in g Dense-Pac M icrosyste m s' ceram ic Stackable Leadless