T 60X Search Results

beam Tube 6L50

Abstract: EF860 em80 tube EF80 pentode tube em84 6dj8 tube el500 ECL86 1T4T ecc189
Contextual Info: OW'C e \e c v \w\»e S R E C E I V IN G P IC T U R E T U B ES T U B ES C A T H O D E - R A Y R E C T IF IE R T U B E S T U B E S T R A N S M IT T IN G M O D U L A T I N G IM P U L S E T U B E S T U B ES TU B ES K L Y S T R O N S M A G N E T R O N S T R A V E L L I N G

Contextual Info: T H IS D R A W IN G IS C O N T R O L L E D B Y T Y C O E L E C T R O N IC S S IM E L .IT IS S U B J E C T E D T O B E R E V IS E D A N D T H E E N G IN E E R IN G O R G A N IZ A T IO N O F T Y C O E L E C T R O N IC S S IM E L S H O U L D B E C O N T A C T E D F O R T H E L A T E S T R E V IS IO N

Contextual Info: TD62309F BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62309F LOW SATURATION DRIVER FEATURES • L o w Satu r a t i o n O u t p u t s V ;g(sat =0.8V M a x @ IoUT= ^ 5 0mA • Output R a t i n g . 2 0V/700mA • Output Clamp Diodes • Inputs Com p a t i b l e w i t h T T L and 3

60X60X25

Abstract: 12FL KDE0506PTS2
Contextual Info: N SPE C IFIC A T IO N FO R APPROVAL I J CUSTOMER DESCRIPTION DC BRUSHLESS FAN DIMENSIONS 60X60X25 mm MODEL KDE0506PTS2 APPROVED NO APPROVED BY AUTHORIZED <• DAWN. t /* % CHKD. \ " ■ APPD. SPEC.NO D600603 ISSUE DATE 07.09.1999 EDITION REVISE DATE E.SPEC

PC21002

Abstract: HYB25D256160CE-6
Contextual Info: D a t a S he et , R e v . 1. 8 , J u n. 2 00 5 HYB25D256[40/80/16]0CE L HYB25D256[40/80/16]0C[T/C/F] 2 5 6 M b i t D o u b l e- D a t a - R a t e SD R A M D D R SD R A M RoHS Compliant M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . Edition 2005-06

Contextual Info: Data Sheet, Rev. 1.21, Jul. 2004 HYB25D256400B[T/C] L HYB25D256800B[T/C](L) HYB25D256160B[T/C](L) 256 Mbit Double Data Rate SDRAM DDR SDRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2004-07 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

81BB

Abstract: BAA marking code DDR200 DDR266 HYB25D256 HYB25D256160BT-5 HYB25D256400B HYB25D256400BC-5 HYB25D256800BT-5
Contextual Info: Data Sheet, Rev. 1.2, Feb. 2004 HYB25D256400B[T/C] L HYB25D256800B[T/C](L) HYB25D256160B[T/C](L) 256 Mbit Double Data Rate SDRAM DDR SDRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2004-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

Contextual Info: Data Sheet, Rev. 1.5, Feb. 2006 HYB25D128160C[E/F/T] HYB25D128400C[C/E/T] HYB25D128800C[C/E/F/T] 128-Mbit Double-Data-Rate SDRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2006-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

AV9170-01CS8

Abstract: ADC16 AV9110 CS4231A DAC16 DS1620 DSP32C EMC12 SR16 TB6463
Contextual Info: 1180 McDermott Dr t West Chester, PA 19380-4022 Communication Automation Corporation Tel: 610 692-9526 tToll-free: (800) 367-6735 t Fax: (610) 436-8258 t http://www.cacdsp.com t Email: sales@cacdsp.com EMC12 Audio Interface for the EmPack System Mezzanine Board

Contextual Info: L A M P STANDARD LED LAMPS ROUND TYPES Chip Package r~\ n Part No. T -1 Profile 1-OTead 3<t UPLead High T tH*. 1 U4> T-1 1.0" Lead High Flange­ less 3<( n y 1 T-1 LffLead 3<£ . BL-B1131E BL-B5I31E BL-B4531E BL-B2131E BL-B3131E BL-B4131E BL-B8131E BL-B5331E

Contextual Info: D a t a S h e e t , Rev. 1.13, Oct. 2004 HYB25D128[400/800/160]C[C/E/T] L 128 Mbit Double Data Rate SDRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2004-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany

KRS038AA0AL-G25

Abstract: Xr239 MF50FD 5-f 104j MC33172D xb24 Kyocera B238 B239 G240
Contextual Info: SPEC. NO. Tq:iC-8KA ’ 0-FH'W002-00 .JUNE 20, DATE 2000 S P E C FOR T Y P E : KR S O 3 8 A A 0 A L - G 2 5 C O N T E N T S 1. A p p l i c a t i o n 2. C o n s t r u c t i o n a n d O u t l i n e 3. M e c h a n i c a l S p e c i f i c a t i o n s 4. A b s o l u t e M a x i m u m R a tings

DDR266A

Abstract: DDR333 DDR400A DDR400B HYB25D256
Contextual Info: D a t a S h e e t , Rev. 1.2, A p r . 2 00 4 HYB25D256[40/80/16]0CE L HYB25D256[40/80/16]0C[T/C/F] 256 Mbit Double Data Rate SDRAM M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . Edition 2004-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

Contextual Info: D a t a S h e e t , Rev. 1.4, Nov. 2005 HYB25D128[400/800/160]C[C/E/T] L 128-Mbit Double-Data-Rate SDRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

LTP-4057A

Abstract: 4057A 4057AG
Contextual Info: A SERIES %SS& A ! AA 4157 4357 n u a n 'l% ,m COLOR & MULTICOLOR DISPLAYS FEATURES 4 0 INCH 101 6 m m M A T R IX H E R ,N T LO W P O W E R R E Q U IR E M E N T i H IG H C O N T R A S T i HIGH B R IG H T N E S S >S IN G L E P L A N E , W ID E V IE W IN G A N t .l I

ipad 2

Abstract: PowerPC 740
Contextual Info: MPC190UM/D Q3/02 REV 2.1 A ICE T T A O MPC190 Security Co-Processor D TN U User’s Manual Y O R H T I A W N E I NG M HA I L C E O T R T P JEC B U S HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217

Contextual Info: D a t a S h e e t , Rev. 1.2, A u g u s t 2 0 0 4 HYB18T512400AF HYB18T512800AF HYB18T512160AF 512-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Memory Products N e v e r s t o p t h i n k i n g . The information in this document is subject to change without notice.

HYB25D256

Abstract: PC2700 PC3200 DDR200 DDR266 DDR333 HYB25D256160CE6
Contextual Info: D a t a S h e e t , Rev. 1.6, D e c . 2 0 0 4 HYB25D256[40/80/16]0CE L HYB25D256[40/80/16]0C[T/C/F] 256 Mbit Double-Data-Rate SDRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2004-12 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

Contextual Info: D a t a S h e e t , Rev. 1.4, A u g . 2 0 0 4 HYB25D256[40/80/16]0CE L HYB25D256[40/80/16]0C[T/C/F] 256 Mbit Double Data Rate SDRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2004-08 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

Contextual Info: D a t a S h e e t , Rev. 1.3, J u l . 2 0 0 4 HYB25D256[40/80/16]0CE L HYB25D256[40/80/16]0C[T/C/F] 256 Mbit Double Data Rate SDRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2004-07 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

MARKING code a66 diode

Abstract: ERA34 Package Marking A66 diode marking aj
Contextual Info: ERA34 o .1A Outline Drawings FAST RECOVERY DIODE • w j t : Features •f l ' J S » J * A T O Ultra small package. Possible for 5mm pitch automatic insertion * 7 - O- r : Color code : Green High voltage by mesa design. • Xf l Mt t t ÎÎE ? 7 ^ Voltage class

Contextual Info: 8.6 T YI (4X iX 15 0.25 h — ( 56X 0 . 5 RECOMMENDED LAND PATTERN AREA 1 )E X UNLESS OTHERWISE S P E C I F I E D 1. FOR S O L D E R T H I C K N E S S A ND C O M P O S I T I O N , S E E " S O L D E R I N E O R M A T I O N 1 I N T H E P A C K A G I N G S E C T I O N OE T H E

Contextual Info: FEATURES • • HI — F L U X , HI — I N T E N S I T Y • H I - S H O C K VIBRATION RESISTANT E X T R A W I D E A N G L E - 1 6 0 - V I E W I N G • E X C E L L E N T FOR B A C K L I G H T I N G IN 1 00 , 00 0 H R S 1 0 YR A V E R A G E LIGHTED P U S H - B U T T O N SWITCHES