T 1000 Search Results

Contextual Info: NPN EPITAXIAL SILICO N DARLINGTON T R A N SIST O R T IPI 40T/141T/142T HIGH DC CURRENT GAIN - MIN hFE = 1000 @ VCE = 4V, IC = 5A M O N O L IT H IC C O N S T R U C T IO N IN B A S E -E M IT T E R S H U N T R E S IS T O R S IN D U S T R IA L U S E C o m p le m e n t to T IP 1 4 5 T /1 4 6 T /1 4 7 T

Contextual Info: A1RFRD 10 NOTES ELECTRICAL 125 V A C RMS, 1, V E L T A G E RATI NG 2, C U R R E N T R A T I N G 1,5 AMP, 3, C E N T A C T R E S I S T A N C E 30 MI L L I C H MS MAX 4, I N S U L A T I E N R E S I S T A N C E 1000 MEGEHMS MIN @ 500 V D C 5 D IELECTRIC STRENGTH

Contextual Info: 2,40 A A 4,00 TABLE TYPE A H 4,50 B 6,00 C 8,00 1, 40 REV APP ECN. NO. A EDIQÀO INICIAL R NOVO CÓDIGO DATE Especif ¡cation: C u r r e n t rating: 3Amp Dieletric S tr e n g t h : 500V AC I n s u la t o r re s i s t a n c e : 1000M ohns nin, C o n t a c t r e s is ta n c e : 20M ohns nin,

Contextual Info: Æk hEUA SPECIFICATION FOF .-.PPF-'” AL Rev.: H C u s t o m e r P a r t No.: Delta P a r t No.: LFE9115-R P a r t N am e: LAN F ilte r 1000 B a s e - T Q uad P o rti jRoHS^ COMPLIANT 1. Mechanical Dimension: UNIT: m m /in c h A = 28.10+ 0.254/1.106+ 0.010

Contextual Info: CUSTOMER PRODUCT SPECIFICATION SHEET BB02-GM BB02-GM 2. 00mm 0 . 0 7 9 " F E M A L E H E A D E R , D U A L E N T R Y T Y P E D U A L R O W - 06 to 80 C O N T A C T S S P E C I FI CA T I ON S C UR R E N T RA TI NG 2 AMP INSULATOR RE SISTANCE 1000 M E GO H M S MIN.

Contextual Info: CP-1052 KINGS CABLING PROCEDURE CP-1000 CLAMP NUT SLIP WASHER W H £N SU PPLIE D S o ld e r o r c rim p c o n ta c t to c e n te r co n d u c to r. For access type angle co n n e cto rs, o m it tnis step and p ro ce e d to step 5. For c a p t i v e c o n t a c t s , a s s e m b l e c o n t a c t c a p t u r i n g pa rt s

rectifiers

Abstract: rectifier 200 ampere 600 volt GD-1001 GD-1002 GD-1003 GD-1004 GD-1005 GD-1006 GD-1008 GIM007
Contextual Info: CO LL IN S EL EC TR ON IC S CORP B4E, S 5533170 D0ÜÜDÜ1 7 T -0 M 3 T-OI-/S~ T -Ö I-/7 T-Ô3-/3 D iode & Rectifier GD-1002 GD-1001 SILICON RECTIFIERS 1,0 AMPERES MAX. PEAK REVERSE VO LT’. 50, 100, 200, 40 0,60 0, 800, 1000 SILICON RECTIFIERS 1,0 AMPERES

Contextual Info: ¡JPE-l'IFI-l'.-.TIOlT FOR APPROVAL Rev.: A ^RoHS^ C u s to m e r P a r t No.: Delta P a r t No.: RJGE1PA7060A-R P a r t Name: RJ45 ICM 1000 B a s e -T 1 P o rt COMPLIANT 1. M echanical Dimension: UNIT : m m ! inch A = 15.88 ' 0.625 B = 13.45 7 0.530 C = 21.95 ' 0.864 MAX

Contextual Info: T -o f - n INTERNATIONAL SEMICOND MTE J> • T0DD37Û 00DQD72 ÖÖ5 ■ ISEM International Semiconductor, IncMINIATURE PLASTIC SILICON RECTIFIERS 1 N 4 2 4 5 thru 1 N 4 2 4 9 V O LT A G E RANGE 20 0 t o 1000 PKV C U R R EN T l . o A a t 55° FEATURES • •

Contextual Info: BCM5761E Brief 10/100/1000BASE-T CONTROLLER WITH INTEGRATED TRANSCEIVER, ADVANCED SECURITY, AND PLATFORM MANAGEMENT CAPABILITIES SUMMARY OF BENEFITS FEATURES 10/100/1000BASE-T transceiver • Integrated • 10/100/1000BASE-T triple-speed MAC • Single-chip device for LAN on Motherboard LOM mobile

*E13000

Abstract: microwave tubes 92CS-10456 up/7553
Contextual Info: 7553 High-Mu Triode CERAMIC-METAL PENCIL TYPE FAST WARM-UP TIME STURDY COAX IAL-ELECTRODE STRUCTURE F o r Use a s a Low -Noise A m p l if i e r Tube in R e c e iv e r A p p l¡ c a t io n s up t o 1000 Me GENERAL DATA E le c t r ic a l: H e a te r , f o r U n ip o t e n t ia l C athode:

206H

Contextual Info: S ch em atic: 7 o- SINGLE PORT r 1 1C1YICT MODULAR K J45 JACK B o- J7 IC T iC T 4 o- J8 J4 J5 5 o- J3 J6 1 C T :1 C T 3 o- J1 J2 6 o- 1 CT:1 CT 1 o- Shld 1R1 ' R2 > R3 S R4 1000pF 2KV .J L. ¿ 10 T9 /77 R1 (R2,R3,R4: 75 Ohms ±1% E le c tr ic a l S p e c ific a tio n s: @ 2 5 T

tube 805

Abstract: power amplifier 1000 watts rms 210 radiotron RCA tube crest audio pro 8200 RADIOTRON RCA 2A3 rca company Rca 805
Contextual Info: 805 R-F POWER AMPLIFIER, OSCILLATOR, CLASS B MODULATOR_ F ila m e n t V o lt a g e C u rre n t T h o ria te d T un gste n 10 3,25 D ir e c t In t e r e le c t r o d e C a p a c ita n c e s G r id t o P la t e 6 .5 G r id t o F ila m e n t 8.5 P la t e t o F ila m e n t

Contextual Info: iÉkbELTd iJF'E'i'IFK'.-TK'Il FOR APPROVAL Rev.: A C u s to m e r P a r t No.: Delta P a r t No.: R P G F -1 2 M 0 3 5 0 -R P a r t Name: RJ45 ICM 1000 B a s e - T 12 Port^ (RoHS COMPLIANT 4. M echanical Dimension: l.a0[0.071]MAX o □ 3D □ TO 3.25 [0.128]

208H

Abstract: xfgig8ab
Contextual Info: r 1. Sch em atic: TRD1+ 9 RJ45 ~| 1 TRX1 + 1 C T :1C T R1 75 Ohms jv n n r ^ T R D 1 - 10 2 TRX1- CHIP SIDE CABLE SIDE 1 C T :1C T TRD2+ 7 3 TRX2+ R2 m TRD2- 8 COMMON CT 2 TRD3+ 5 75 Ohms . 6 TRX21 C T :1C T TauuJ" R3 4 TRX3+ 75 Ohms J !T Y Y \ . TRD3- 6 5 TRX31 C T :1C T

Contextual Info: O 118 CD E LE C T R ]C A L DATA -Current at ANB. 1.5 A at 20* C / 1 A at 70« C - [ nrax 2A -Contact resistance -tneuLatlon res i stance <20raa a c c o rd in g t o D[N 41040 P a r t 4 t e s t 2a - t e s t vaLTAse a c c o r d in g Lo DIN 41540 P a r t 21 >IO BNa a c c o rd in g t o DIN 41640 P a r t 7 t e s t 3a

GR10

Abstract: I960 12BX6 cathode ray Scans-0017273
Contextual Info: T E N T A T IV E DATA I2BX6 TUNG-SOL PENTODE M IN IA T U R E T Y PE 2" 8 h CO A T E D MAX. UN I P O T E N T I A L HEATER 8 MAX T-6^ C AT H OD E 12.6 VOLTS 2 r 0.15 AMP. AC OR DC 8 MAX ANY M O U N T IN G P O S I T I O N imf BOTTOM VIEW G L A SS BULB 9 A 0 THE

5718 TUBE

Abstract: ecc70 tube 5718 on 5718 subminiature 5718 5800 tube
Contextual Info: TENTATIVE DATA 5718 *- T U N G SOL \ T R I O D E S U B M IN IA T U R E T Y P E .4 0 0 " MAX. /Q C O A T E D U N IP O T E N T IA L C A T H O D E 1.075 060" + T—3 HEATER 1.375 MAX. 6 .3±5% V O L T S 0 .1 5 A M P . AC OR DC l l . 1.5

Contextual Info: im 7 i~ - 0 A nm = \ y ^ y v M IN IA T U R E A L U M IN U M E L E C T R O L Y T IC C A P A C IT O R S RZVJX S E R IE S 105°C iS-f > t°— ft 105°C Low Impedance. FEATU RES • 105°c lo o o atw m io Load Life : 105°C 1000 hours. Reflow soldering is available.

84 PLCC socket

Contextual Info: D P L C A C T S A S O H E C E K T E T Specification: 1 2) 3) 4) 5) 6) 7) Insulator: Thermoplastic UL94V-0) Contact: Copper Alloy Storage Temperature: -20°C ~ 85°C Operating Temperature: 0°C ~ 70°C Contact Resistance: 20 mW max. (initial) Insulation Resistance: 1000 MW min.

msg100l41

Abstract: MSG100U41 SCR MODULE
Contextual Info: SCR MODULE MSG100 G,L,Q,U 41 SILICON DIFFUSED TYPE POWER CONTROL APPLICATIONS. Unit FEATURES: . R e p e t i t i v e Peak O f f - S t a t e V o l t a g e : V q r m 4 0 0 - 1 600V R e p e t i t i v e Peak R e v e r s e V o l t a g e : Vr r m . A v e r a g e O n - S t a t e C u r r e n t (Per SCR): I t (AV)= 5 0A

ti0041

Contextual Info: 54ACT11000, 74ACT11000 QUADRUPLE 2-INPUT POSITIVE-NAND GATES T I0041— D2957, JUNE 1967— REVISED M ARCH 1990 • Inputs are TTL-Voltage Compatible 5 4 A C T 11 0 00 . . . J P ACKA G E 7 4 A C T 1 1000 . . . D O R N PACKA GE • Flow-Through Architecture to Optimize PCB

25N100A

Abstract: .25N100 25N100 N100
Contextual Info: Low VCE sat High speed IGBT IXGH/IXGM 25 N100 IXGH/IXGM 25 N100A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 50 A IC90

74hc646a

Contextual Info: TC74HC646AP TC74HC648AP O C T A L B U S T R A N S C E IV E R /R E G IS T E R T C 7 4H C 64 6 A P N O N -IN V E R T IN G T C 7 4 H C 6 4 8 A P I N V E R T I N G _ T h e TC74HC646A/648A a re h ig h speed CMOS O C T A L BUS T R A N S C E IV E R /R E G IS T E R s