SYMBOLOGY POWER SEMICONDUCTOR DEVICES Search Results

definition RMS forward current

Abstract: MITSUBISHI GATE TURN-OFF THYRISTOR gto Gate Turn-off Thyristor Gate Turn-Off Thyristors gto mitsubishi GTO thyristor Application notes
Contextual Info: MITSUBISHI HIGH POWER SEMICONDUCTORS SYMBOLOGY 1. Power semiconductor devices, general use Definition/description Parameter Symbol Rth Thermal resistance Defined when junction power dissipation results in a balanced state of thermal flow. Specifies the degree of temperature rise per unit of power, measuring junction temperature from a specified

SMYV001

Contextual Info: MOS MEMORY GLOSSARY SYMBOLS, TERMS, AND DEFINITIONS SMYV001 – MARCH 1998 GLOSSARY Access time – The time interval between the application of a specific input pulse and the availability of valid signals at an output. Example symbology: Classified ta A

SYMBOLOGY Power semiconductor devices

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

33178

Abstract: 1N5550 1N5550US 1N5551 1N5552 1N5553 1N5554 1N5554US 1N5554 JANTXV equivalent 1N5554 JANTXV
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 10 May 2010. MIL-PRF-19500/420L W/Amendment 1 10 February 2010 SUPERSEDING MIL-PRF-19500/420L 27 June 2008 PERFORMANCE SPECIFICATION SHEET

33178

Abstract: JANTX 1N5552 1N5550 1N5550US 1N5551 1N5551US 1N5552 1N5554 1N5554US 1n5551 diode
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 July 2004. MIL-PRF-19500/420H 19 April 2004 SUPERSEDING MIL-PRF-19500/420G 30 December 2002 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER,

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 6 December 2013. INCH-POUND MIL-PRF-19500/420M 6 September 2013 SUPERSEDING MIL-PRF-19500/420L 27 June 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER,

FED-STD-H28 chamfer

Abstract: 1N6304 1N6305 1N6306 DO-203AB
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 January 2008. INCH-POUND MIL-PRF-19500/550C 18 October 2007 SUPERSEDING MIL-PRF-19500/550B 20 October 1998 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST-RECOVERY, HIGH CURRENT,

1N5812 diode

Abstract: 1N5812 1N5812R 1N5814 1N5814R 1N5816 1N5816R UNF-2A 190-32 UNF
Contextual Info: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 April 2009. MIL-PRF-19500/478J 27 January 2010 SUPERSEDING MIL-PRF-19500/478H 11 March 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY,

JANTXV 1N3595 equivalent

Contextual Info: INCH-POUND MIL-PRF-19500/241N 14 November 2013 SUPERSEDING MIL-PRF-19500/241M 25 January 2010 The documentation and process conversion measures necessary to comply with this revision shall be completed by 14 January 2014. PERFORMANCE SPECIFICATION SHEET *

1N6841U3

Abstract: SMD DIODE 739 V/1N6841U3
Contextual Info: 1N6840U3 and 1N6841U3 Compliant 35 and 45 VOLT, 10 AMP DUAL SCHOTTKY COMMON CATHODE CENTER TAP RECTIFIER Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/678 DESCRIPTION These low-profile 1N6840U3 and 1N6841U3 dual schottky rectifier devices are military

Contextual Info: 1N6840U3 and 1N6841U3 Compliant 35 and 45 VOLT, 10 AMP DUAL SCHOTTKY COMMON CATHODE CENTER TAP RECTIFIER Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/678 DESCRIPTION These low-profile 1N6840U3 and 1N6841U3 dual schottky rectifier devices are military

1N823-1

Abstract: 1N821-1 JANTX 1N821-1 1N821UR-1 1N823UR-1 1N825-1 1N825UR-1 1N827-1 1N827UR-1 1N829-1
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 May 2009. MIL-PRF-19500/159P 4 February 2009 SUPERSEDING MIL-PRF-19500/159N 1 APRIL 2008 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED,

Contextual Info: UT2005 – UT2060, UT3005 – UT3060, and UT4005 – UT4060 Available 2 AMP TO 4 AMP STANDARD RECOVERY RECTIFIERS DESCRIPTION High average power and surge capability make these series of devices attractive in many highreliability applications. All Microsemi rectifiers have a sleeve of pure hard glass fused to the silicon

1N4568AUR-1

Abstract: 1n4573 die 1N4570A JANTX 1N4569AUR1 JANTX application notes 1n4575 1N4565A-1 1N4565AUR-1 1N4566A-1 1N4584A-1 1N4584AUR-1
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 May 2009. MIL-PRF-19500/452J 4 February 2009 SUPERSEDING MIL-PRF-19500/452H 26 March 2008 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED,

Microsemi micronote series 050

Contextual Info: UT2005 – UT2060, UT3005 – UT3060, and UT4005 – UT4060 2 Amp To 4 Amp Standard Recovery Rectifiers Available DESCRIPTION High average power and surge capability make these series of devices attractive in many highreliability applications. All Microsemi rectifiers have a sleeve of pure hard glass fused to the silicon

Microsemi micronote series 050

Contextual Info: UT2005 – UT2060, UT3005 – UT3060, and UT4005 – UT4060 Available 2 AMP TO 4 AMP STANDARD RECOVERY RECTIFIERS DESCRIPTION High average power and surge capability make these series of devices attractive in many highreliability applications. All Microsemi rectifiers have a sleeve of pure hard glass fused to the silicon

ut264

Abstract: UT347 Microsemi micronote series 050
Contextual Info: UT236 – UT347, UT249 – UT363, UT251 – UT364 and UT261 – UT368 Available 1 AMP TO 2 AMP STANDARD RECOVERY RECTIFIERS DESCRIPTION This miniature, standard recovery rectifier diode series offers the user extreme reliability for highreliability applications. These devices are available in the leaded A package configuration.

UT347

Abstract: Microsemi micronote series 050
Contextual Info: UT236 – UT347, UT249 – UT363, UT251 – UT364 and UT261 – UT368 1 Amp To 2 Amp Standard Recovery Rectifiers Available DESCRIPTION This miniature, standard recovery rectifier diode series offers the user extreme reliability for highreliability applications. These devices are available in the leaded A package configuration.

UT347

Abstract: Microsemi micronote series 050 UT362 UT242
Contextual Info: UT236 – UT347, UT249 – UT363, UT251 – UT364 and UT261 – UT268 1 Amp To 2 Amp Standard Recovery Rectifiers Available DESCRIPTION This miniature, standard recovery rectifier diode series offers the user extreme reliability for highreliability applications. These devices are available in the leaded A package configuration.

DO213-AB color band

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 October 2006. MIL-PRF-19500/115L 5 July 2006 SUPERSEDING MIL-PRF-19500/115K 16 August 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES

equivalent for transistor tt 2222

Abstract: 2N6678T1 2N6676T1 JANS 2N6678T1 2N6691 2N6693 2n6678 2N6676 JANS 2N6676T1 2N6678 JANTX equivalent
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 25 July 2009. MIL-PRF-19500/538E 25 April 2009 SUPERSEDING MIL-PRF-19500/538D 26 June 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,

transistor equivalent 2n1893

Abstract: 2N1893 equivalent 2N1893S 2N1893 2N720A 65kA
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 7 May 2010. MIL-PRF-19500/182G w/AMENDMENT 1 7 February 2010 SUPERSEDING MIL-PRF-19500/182G 2 August 2006 PERFORMANCE SPECIFICATION SHEET

OPTO tl431

Abstract: TPS5904 diode led ir light emitting diode LED IEC695-2-2 TL431 TPS5904A TPS5904AP TPS5904P
Contextual Info: TPS5904, TPS5904A OPTO-ISOLATED FEEDBACK AMPLIFIERS SOES016A – MAY 1995 – REVISED OCTOBER 1995 • • • • • • TL431 Precision Programmable Reference and an Optocoupler in a Single Package 0.4% Voltage-Reference Tolerance Controlled Optocoupler CTRs:

UT347

Abstract: Microsemi micronote series 050
Contextual Info: UT236 – UT347, UT249 – UT363, UT251 – UT364 and UT261 – UT368 1 Amp To 2 Amp Standard Recovery Rectifiers Available DESCRIPTION This miniature, standard recovery rectifier diode series offers the user extreme reliability for highreliability applications. These devices are available in the leaded A package configuration.