SYMBOL RATE Search Results

BCW32LT1

Abstract: marking 5K MARKING D2X
Contextual Info: BCW32LT1 General Purpose Transistors NPN Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 32 Vdc Collector-Base Voltage VCBO 32 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Value Unit

MMBF5460LT1

Contextual Info: ON Semiconductort JFET - General Purpose Transistor MMBF5460LT1 P–Channel 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IGF 10 mAdc Symbol Max Unit PD 225 mW 1.8

Contextual Info: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA APPROVED 13-03-06 Charles F. Saffle Paragraph 1.4; added Vcontrol range (Voltages are relative to VOUT) +2 V to +36 V. Figure 2; corrected the terminal symbol names. Figure 3; corrected the terminal symbol names and locations. -sld

Contextual Info: PC Card Card-Side Socket Connector [Top Surface Mount SMT Single Row] Part Number • ICM-68FYC-0M ( )-TP Symbol of offset dimension No Symbol : 0.0mm 03 : 0.3mm 06 : 0.6mm T ape’n reel packaging Part number A (Offset*) ICM -68FYC ICM-68FYC-OM03 ICM-68FY C-QM06

Contextual Info: MOTOROLA Order this document by BAS16LT1/D SEMICONDUCTOR TECHNICAL DATA Sw itching Diode BAS16LT1 3 O \4 CATHODE O 1 Motorola Preferred Device ANODE MAXIMUM RATINGS Rating Symbol Value Unit Vr 75 V dc if 20 0 m A dc iF M s u rg e 50 0 m A dc Symbol Max

PHP8N50E

Abstract: BUK457-500B PHB8N50E PHP6N60 PHP8N50 PHW8N50E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP8N50E, PHB8N50E, PHW8N50E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance

BUK457-600B

Abstract: PHB7N60E PHP6N60 PHP7N60E PHW7N60E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP7N60E, PHB7N60E, PHW7N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance

Contextual Info: SKM 100GB125DN Absolute Maximum Ratings Symbol Conditions IGBT 6$2 $ $19 6:2 #< (, 6 SEMITRANSTM 2N Ultra Fast IGBT Module SKM 100GB125DN !9  3 *+ E  BE (< 3 *4+ 5$ Characteristics Symbol Conditions IGBT 6$2),    Typical Applications

PHX6NA60E

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistors Low capacitance Avalanche energy rated PHX6NA60E FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching • Low feedback capacitance • Stable off-state characteristics

PHB3N50E

Abstract: PHP2N60 PHP3N50 PHP3N50E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP3N50E, PHB3N50E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance

PHB7N40E

Abstract: PHP3N50 PHP3N60 PHP5N40 PHP7N40E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP7N40E, PHB7N40E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance

Contextual Info: SKM 100GB173D Absolute Maximum Ratings Symbol Conditions IGBT &6 & &9: ;6 3%= *3 SEMITRANSTM 2 IGBT Modules SKM 100GB173D #:  4 +, B  /B 3= 4 +0, 5& Characteristics Symbol Conditions IGBT &6*-     Typical Applications  '&  % 

Contextual Info: SKM 300GB124D Absolute Maximum Ratings Symbol Conditions IGBT %.8 . .< %!8 ?   % SEMITRANSTM 3 Low Loss IGBT Modules SKM 300GB124D , 5 13 C  AC ? 5 163 7. Characteristics Symbol Conditions IGBT %.8        Typical Applications

Contextual Info: SKM 100GB173D Absolute Maximum Ratings Symbol Conditions IGBT &6 & &9: ;6 3%= *3 SEMITRANSTM 2 IGBT Modules SKM 100GB173D #:  4 +, B  /B 3= 4 +0, 5& Characteristics Symbol Conditions IGBT &6*-     Typical Applications  '&  % 

Contextual Info: DIGITRON SEMICONDUCTORS MBR20200CT 20A SCHOTTKY RECTIFIER MAXIMUM RATINGS Symbol MBR20200CT Unit Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage Rating VRRM VRWM VR 200 V Average rectified forward current Rated VR IF(AV)

St CONNECTOR DRAWING

Contextual Info: FEATURES - 1300/1550 nm Wavelength - For Singlemode Applications - Data rate 622 Mb/s - Low power consumption - Single Power Supply - Available with SC or ST Connector LASER TRANSMITTER CHARACTERISTICS T= 25°C Parameter Symbol Minimum Typical Maximum 1

IXFB110N60P3

Contextual Info: Advance Technical Information IXFB110N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 600V 110A Ω 56mΩ 250ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS

Contextual Info: Advance Technical Information IXFL132N50P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 500V 63A Ω 43mΩ 250ns ISOPLUS264 Symbol Test Conditions

ISOPLUS247

Abstract: IXFR14N100Q2
Contextual Info: Preliminary Technical Information HiPerFETTM Power MOSFET Q2-Class IXFR14N100Q2 VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings

IXFH94N30T

Abstract: IXFT94N30T
Contextual Info: Preliminary Technical Information IXFT94N30T IXFH94N30T TrenchTM HiperFETTM Power MOSFETs VDSS ID25 = 300V = 94A ≤ 36mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G S Symbol Test Conditions Maximum Ratings

70N15

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 70N15 ISOPLUS247TM Electrically Isolated Backside trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs VDSS ID25 RDS on IXFK 66N50Q2 IXFX 66N50Q2 Q-Class = = = trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol Test Conditions Maximum Ratings

4n100

Abstract: IXFH4N100Q 4N100Q IXFR4N100Q
Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside VDSS = 1000 V ID25 = 3.5 A RDS(on) = 3.0 Ω trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings

Contextual Info: DIGITRON SEMICONDUCTORS MBR8035-MBR8045 80A SCHOTTKY RECTIFIER MAXIMUM RATINGS Symbol MBR8035 MBR8045 Unit Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage Rating VRRM VRWM VR 35 45 V Peak repetitive forward current Rated VR, square wave, 20kHz