SYMBOL RATE Search Results

Contextual Info: PC Card Card-Side Socket Connector [Top Surface Mount SMT Single Row] Part Number • ICM-68FYC-0M ( )-TP Symbol of offset dimension No Symbol : 0.0mm 03 : 0.3mm 06 : 0.6mm T ape’n reel packaging Part number A (Offset*) ICM -68FYC ICM-68FYC-OM03 ICM-68FY C-QM06

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs VDSS ID25 RDS on IXFK 66N50Q2 IXFX 66N50Q2 Q-Class = = = trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol Test Conditions Maximum Ratings

4n100

Abstract: IXFH4N100Q 4N100Q IXFR4N100Q
Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside VDSS = 1000 V ID25 = 3.5 A RDS(on) = 3.0 Ω trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings

Z 728

Abstract: 15N80Q IXFH15N80Q 15N80
Contextual Info: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET VDSS ID25 RDS on Q-Class Electrically Isolated Back Surface = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS220TM Symbol Test Conditions Maximum Ratings

73N30Q

Contextual Info: IXFE 73N30Q HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on = 300 V = 66 A Ω = 46 mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions Maximum Ratings VDSS

20N120

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 20N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 = 1200 V = 20 A RDS on = 0.75 Ω ≤ 300 ns trr D G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: HiPerFETTM Power MOSFETs IXFB 72N55Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 550 V ID25 = 72 A Ω RDS on = 72 mΩ ≤ 250 ns trr Preliminary Data Sheet PLUS 264TM (IXFB) Symbol Test Conditions

ISOPLUS247

Abstract: IXFR40N50Q2 S4550
Contextual Info: Advanced Technical Data IXFR40N50Q2 HiPerFETTM Power MOSFETs VDSS = 500 V = 29 A ID25 RDS on = 0.14 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

Contextual Info: HiPerFETTM Power MOSFET IXFN 72N55Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 550 V ID25 = 72 A Ω RDS on = 72 mΩ ≤ 250 ns trr Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions

200N06

Abstract: SOT-227 Package
Contextual Info: HiPerFETTM Power MOSFETs IXFN 200 N06 IXFN 200 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IL RMS TC= 25°C; Chip capability

26N90

Abstract: IXFN26N90 125OC 25N90 IXFN25N90 max1828
Contextual Info: HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID cont RDS(on) trr 900 V 900 V 26 A 25 A 0.30 W 0.33 W 250 ns 250 ns D G Preliminary data sheet Symbol Test Conditions

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 24 • N channel • Enhancement mode • Avalanche-rated Type Vos h ^DS on Package 1> Ordering Code BUZ 24 100 V 32 A 0.06 Í2 TO-204 AE C67078-S1003-A2 Maximum Ratings Parameter Symbol Values Continuous drain current, Tc = 27 °C

90n30

Contextual Info: IXFN 90N30 HiPerFETTM Power MOSFETs Single Die MOSFET VDSS ID25 = 300 V = 90 A Ω = 33 mΩ RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr ≤ 250 ns G Preliminary Data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: HiPerFETTM Power MOSFETs IXFH 66N20Q IXFT 66N20Q VDSS ID25 RDS on Q-Class = 200 V = 66 A Ω = 40 mΩ trr ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

Contextual Info: SKM 200GB124D Absolute Maximum Ratings Symbol Conditions IGBT 7-8 -< 7!8 ?   7 SEMITRANSTM 3 Low Loss IGBT Modules SKM 200GB124D + 4 02 D  BD ? 4 052 6- Characteristics Symbol Conditions IGBT 7-8        Typical Applications  $       

FOQ PIEZO TECHNIK GMBH

Abstract: TCXO piezo Piezo Technik
Contextual Info: PTTC2 series - TCXO, frequencies up to 105 MHz Highlights PTTC2 series: Low phase noise optimised design High stability Low aging Different designs depending on customers requirements Tuning range also available General electrical parameter PTTC2 series symbol

44N60

Abstract: 125OC
Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 44N60 VDSS = ID25 = RDS on = D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Test Conditions trr £ 250 ns G S Symbol S Maximum Ratings VDSS T J = 25°C to 150°C 600 V VDGR T J = 25°C to 150°C; RGS = 1 MW

UPS 380v

Abstract: 20n60c power switching
Contextual Info: CoolMOSTM Power MOSFET IXKC 20N60C in ISOPLUS220TM Package Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , Superjunction MOSFET VDSS = 600 V ID25 = 14 A Ω RDS(on) = 190 mΩ Preliminary Data Sheet Symbol Test Conditions ISOPLUS 220LVTM

IXUC200N055

Abstract: 123B16
Contextual Info: ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC200N055 VDSS = 55 V ID25 = 200 A Ω RDS on = 5.1 mΩ ISOPLUS220TM Electrically Isolated Back Surface ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 55 V VGS Continuous

TOSHIBA THYRISTOR

Abstract: SM6J44
Contextual Info: BI-DIRECTIONAL TRIODE THYRISTOR SM6 G,J 44 SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS. Unit in mm . Repetitive Peak Off-State Voltage: V d RM=400,600V . R.M.S On-State Current : It (R M S ) = 6A . Dual in Line Type MAXIMUM RATINGS SYMBOL CHARACTERISTIC

2B4B41

Abstract: 4b41 2J4B41 2J4B J4B41 2G4B41
Contextual Info: SILICON DIFFUSED TYPE RECTIFIER STACK O SINGLE PHASE BRIDGE RECTIFIER APPLICATIONS. • Average O utput Rectified C urrent : I o = 2.0A • Repetitive Peak Reverse Voltage : 2 B,G,J 4B41 = 100—600V POLARITY (-)» o( + ) (-)» O (-) M A X IM U M RATINGS SYMBOL

Contextual Info: IXFR 90N30 HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS = 300 V ID25 = 75 A RDS on = 33 mW (Electrically Isolated Back Surface) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW

Contextual Info: SEMiX703GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX703GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V

Contextual Info: SKiiP 2413 GB123-4DUW V3 Absolute Maximum Ratings Symbol Ts = 25°C unless otherwise specified Conditions Values Unit V System SKiiP 3 VCC1 Operating DC link voltage 900 Visol DC, t = 1 s, main terminals to heat sink 4300 V It RMS) per AC terminal, Tterminal <115°C