SY 320 DIODE Search Results

sy 170

Abstract: SY 356 SY 360 05 sy 710 sy 360 Dioden SY 250 byx 21 SY 320 sy710 Halbleiterbauelemente DDR
Contextual Info: FUNKAMATEUR-Bauelementeinformation VD Vergleichsliste für Dioden DDR/international D D R - Vergleichs­ Typ typ GA 100 G A 101 G A 102 GA 104 G A 105 GAY 61 GAY 64 SA 412 SA 415 SA 418 SAY 12 SAY 16 o SAY 17 SAY 18 SAY 20 SAY 30 SAY 32 SAY 40 SAY 42 SY 170

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

Halbleiterbauelemente DDR

Abstract: sy 170 diode sy-180 diode sy 171 10 diode sy-170 mikroelektronik DDR mikroelektronik Heft 12 VEB mikroelektronik SY 180 Applikation Information
Contextual Info: m o ß ^ t s ie le l- c ia n o r ill- i Information Applikation INFORMATION A PPLIKA TIO N M IK R O E L E K T R O N IK Heft 16: L E IS T U N G S -E L E K T R O N IK II Bauelemente-Sortiment der DDR -Teil 1: Dioden- VEB GLEICHRICHTERWERK STAHNSDORF im VEB Kombinat Mikroelektronik

200JH21

Abstract: toshiba 3-60B1A
Contextual Info: -_ 9097250 TOSHIBA 39C 02245 C D IS C R E T E / O P T O 0 7"- 0 3 - 2 3 FAST RECOVERY DIODE 0 SHIBA { D I S C R E T E / O P T 0> 200JH21 ln DËJ'iD^aSG 0002545 4 Unit in 600V 200A MAXIMUM RATINGS CHARACTERISTIC SY M B O L RATING UN IT Repetitive P eak R everse Voltage

sy 320 diode

Contextual Info: P h ilip s Se m ico n d u cto rs P re lim in sry specification Schottky barrier diodes FEA T U R ES BAT54W series Q U IC K R E F E R EN C E DATA • Ultra-fast switching speed • Low forward voltage SY M B O L PA RAM ET ER CO N DITIO N S UNIT MAX. Per diode

sy 320 diode

Abstract: sg 4001 diode GER-A sy 360 KT802A KY transistor diode sy 104 KT 315 a KT 802 mitteilung aus dem veb rft
Contextual Info: S E R V I C E - M I T T E I LU HClüN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN { p is i! ! r a d i o -televisioni | JANUAR 1982 4 1 SEITE 1-4 Mitteilung aus dem VEB Fernsehgerätewerke "Friedr. Engels" Staßfurt Farbreinheitsstörungen bei In-line-Bildröhren

sy 320 diode

Contextual Info: SEM ICONDUCTOR KTX403U TE CHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE SW ITC H IN G A PPLICATION. LOW V O LT A G E HIGH SPEED SWITCHING. FEA T U RE S • Including tw o T R , D iode devices in USV. (U ltra Super M ini type w ith 5 leads)

6P45S

Abstract: 6N23P 6P14P Selenstab 5 GE 200 AF Hochsp.leitg 6F1P service-mitteilungen D814D D814A hsk 103 taa550
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N m m 1r a d i o - television QKTOBKR | 1 9 8 1 11 SEITE Mitteilung auf dem 7KB Fernsehgerätewerke "Friedr. Sögels" Staßfurt Servlcehi nwels zum SECAM - IS - Dekoder A 295 D» A 220 D

diode sy 345

Abstract: diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337
Contextual Info: SERVICE-MITTEILUNGEN V E B R F T I N D U S T R I E V E R T R I E B R U N D F U N K UND F E R N S E H E N t B i n n a |r a d i o - t e l e v i s i o n I Ausgobe 1-2 _ _ Febr. 89 1-7 Mitteilung aus dam VEB RFT IV RuF Leipzig, Organisation Plan der Inventurtermine Ersatztell/sroßhandel 1989

Contextual Info: 6mm FLANGE BASED LED LAMP BLFA064MGCK-6V Features !BUILT-IN MEGA GREEN Description CURRENT LIMITING RESISTOR FOR The Mega Green source color devices are made with DH DIRECT APPLICATION OF DIFFERENT ACROSS InGaAlP on GaAs substrate Light Emitting Diode. CURRENT.

A5J diode

Abstract: BO-120 DI200 M109 sf transistor 1DI200M-120 1di200
Contextual Info: 1 DI 2 0 0 M -1 20 200a - J U L - J i , P O W E R T R A N S IS T O R M O D U LE : Features • • h F E ^ ffii' • 7 '; — • High Arm Short Circuit Capability High DC Current Gain — KJ*3 Including Free Wheeling Diode Insulated Type : Applications

Contextual Info: 5mm FLANGE BASED LED LAMP BLFA054MGCK-6V Features !BUILT-IN MEGA GREEN Description CURRENT LIMITING RESISTOR FOR The Mega Green source color devices are made with DH DIRECT APPLICATION OF DIFFERENT ACROSS InGaAlP on GaAs substrate Light Emitting Diode. CURRENT.

sy 320 diode

Contextual Info: 4.0x3.0mm SMD CHIP LED LAMP PRELIMINARY SPEC KPEKA-4030SEC Features Description !4.0mmx3.0mm SMT LED, 2.65mm THICKNESS. The Super Bright Orange source color devices !LOW POWER CONSUMPTION. are made with DH InGaAlP on GaAs substrate !WIDE VIEWING ANGLE. Light Emitting Diode.

SW22CXC320

Abstract: C320 CXC320 westcode diodes C-I-70C
Contextual Info: WESTCODE SEMICONDUCTORS BSE ^70^=135 D DD02S17 5 • lilESB T - o i - ¿ 3 T E C H N IC A L PU B LIC A T IO N WESTCODE SEMICONDUCTORS DC 320 IS S U E 2 May, 1989 Ceramic Capsule Silicon Diodes Type CXC 320 620 amperes average: up to2400 volts VRRM R A T IN G S

Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT BAT54WS SCHOTTKY DIODES SOD-323 FEATURES ♦ These diodes feature very low turn-on voltage and fast switching. ♦ These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.

L-442

Abstract: l43d L442
Contextual Info: SOT23 SILICON EPITAXIAL SOHOTTKY BARRIER DIODES ISSUE 1 - SEPTEMBER 1995 , 1 o c r ic c I ' O 1 A i f 2 3 t 3 \ 2 3 2 BAT54 BAT54A BAT54S BAT54C SINGLE COMMON ANODE SERIES COMMON CATHODE Pin Configuration L4Z L42 L44 L43 Partmarking Detail D evice T ype FEATURES: Low VF & High Current Capability

Contextual Info: UNISONICTECHNOLOGIESCO., LTD BAT54SDW Preliminary DIODE SCH OT T K Y BARRI ER DU AL DI ODES 4 ̈ 5 DESCRI PT I ON 6 Planar Schottky barrier diodes are encapsulated in the SOT-363 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.

Contextual Info: UNISONICTECHNOLOGIESCO., LTD BAT54TDW DIODE SCH OT T K Y BARRI ER DU AL DI ODES 4 ̈ 5 DESCRI PT I ON 6 Planar Schottky barrier diodes are encapsulated in the SOT-363 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.

Contextual Info: UNISONICTECHNOLOGIESCO., LTD BAT54ADW Preliminary DIODE SCH OT T K Y BARRI ER DU AL DI ODES 4 ̈ 5 DESCRI PT I ON 6 Planar Schottky barrier diodes are encapsulated in the SOT-363 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.

Contextual Info: UNISONICTECHNOLOGIESCO., LTD BAT54DW Preliminary DIODE SCH OT T K Y BARRI ER DU AL DI ODES 4 ̈ 5 DESCRI PT I ON 6 Planar Schottky barrier diodes are encapsulated in the SOT-363 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.

Contextual Info: UNISONICTECHNOLOGIESCO., LTD BAT54CDW Preliminary DIODE SCH OT T K Y BARRI ER DU AL DI ODES 4 ̈ 5 DESCRI PT I ON 6 Planar Schottky barrier diodes are encapsulated in the SOT-363 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.

Contextual Info: UNISONICTECHNOLOGIESCO., LTD BAT54SW DIODE SCH OT T K Y BARRI ER DU AL DI ODES ̈ DESCRI PT I ON Planar Schottky barrier diodes are encapsulated in the SOT-323 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.

Contextual Info: UNISONICTECHNOLOGIESCO., LTD BAT54W DIODE SCH OT T K Y BARRI ER DI ODES ̈ DESCRI PT I ON Planar Schottky barrier diodes are encapsulated in the SOT-323 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.

Contextual Info: UNISONICTECHNOLOGIESCO., LTD BAT54CW DIODE SCH OT T K Y BARRI ER DU AL DI ODES ̈ DESCRI PT I ON Planar Schottky barrier diodes are encapsulated in the SOT-323 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.