SY 160 LL Search Results

2N6284

Abstract: 2N6283 2N6286 2N6287 16 amp npn darlington power transistors
Contextual Info: A LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6283, 2N6284, 2N6286,2N6287 160 WATT 20 AMP CONTINUOUS, 40 AMP PEAK ‘ MAXIMUM RATINGS P A RA M ET ER SY M B O L Collector Em itter Voltage 2N6283, 2N6286 2N6284, 2N6287 Vdc 80 100 Vdc V cB O 80 100 Em itter Base Voltage

TRANSISTOR 132-gd

Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Contextual Info: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n

transistor marking c3n

Contextual Info: TOSHIBA 2SC5262 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5262 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Low Noise Figure : N F = 1.7dB f=2G H z H igh Gain : Gain = lld B (f= 2 G H z ) MAXIMUM RATINGS (Ta = 25°C) SYM BOL CHARACTERISTIC

VQB71

Abstract: vqb 71 Halbleiterbauelemente DDR "halbleiterwerk frankfurt" U105D diode sy-250 U107D u311d hfo frankfurt sy 170
Contextual Info: eiecrronic Halbleiter-Bauelemente D ie v o r lie g e n d e Ü b e rs ic h t e n t h ä l t i n g e d rä n g te r Form d ie w ic h tig s te n G renz- und K enndaten d e r i n d e r DDR g e f e r t i g t e n H a lb le ite r b a u e le m e n te . D ie K ennw erte werden im a llg e m e in e n f ü r e in e U m gebungstem peratur von

k3882

Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Contextual Info: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d

2SB944

Abstract: 2SD12 2SD1269
Contextual Info: Power Transistors 2SD1269 2SD 1269 Silicon N P N Epitaxial P lanar Type • P ackage Dim ensions Pow er Switching C om plem entary Pair with 2 S B 9 4 4 ■ Features • Low co llector-em itter satu ration voltag e • G ood linearity of D C cu rren t gain

Contextual Info: PRELIMINARY IDT7027S/L HIGH-SPEED 32Kx 16 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • • • • • T ru e D u a l-P o rte d m e m o ry cells w h ic h a llo w s im u lta ­ neous a cce ss of th e s a m e m e m o ry lo cation H ig h -sp e e d access

sj 2252 ic

Abstract: sj 2252
Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R ^ *| “j FOR VCO APPLICATION U n it in m m ] 6±0 2 MAXIMUM RATINGS Ta = 25°C C H A R A C T E R IS T IC SY M BO L C ollector-B ase V oltage RA T IN G U N IT v CBO 20 V C o lle c to r-E m itte r V oltage

Contextual Info: HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM IDT7008S/L Features * * * True D ual-Ported m em ory c e lls w hich allow sim u ltan e o u s IDT7008 e a sily e x p a n d s data b u s width to 16 bits or reads of the s a m e m em ory location m ore u sin g the M aster/Slave select w hen c a s c a d in g m ore

IC 7447

Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Contextual Info: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222

Halbleiterbauelemente DDR

Abstract: GAZ17 diode sy-250 "halbleiterwerk frankfurt" sal41 diode sy-170 SF 127 diode say17 Halbleiter-Bauelemente DDR SY 170
Contextual Info: eiecrronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenndaten der in der DD R gefertigten H albleiterbauelem ente. Die Kennwerte werden im allgem einen für eine Um gebungs­ temperatur von 25 °C angegeben.

Contextual Info: r BIPOLAR ANALOG INTEGRATED CIRCUIT r THREE TERMINAL NEGATIVE VOLTAGE REGULATOR DESCRIPTION /¿PC 79N 00 se ries are m o n o lith ic th re e te rm in a l p o s itiv e re g u la to rs w h ic h e m p lo y in te rn a lly c u rre n t lim itin g , th e rm a l s h u t-d o w n , o u tp u t tra n s is to r safe o p e ra tin g a rea p ro tectio n m a k e th e m e s s e n tia lly in d e s tru c tib le .

Halbleiterbauelemente DDR

Abstract: Dioden SY 250 diode sy-250 B250C135 u103d GD244 transistor gc 301 SAM42 diode sy 166 D172C
Contextual Info: electronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz-und Kenndaten der in der DDR getertigten Halbleiterbauelemente. Die Kennwerte werden im allgemeinen für eine Umgebungs­ temperatur von 25 °C angegeben.

Contextual Info: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA8050AK TENTATIVE DATA 1.5A MOTOR DRIVER WITH BRAKE FUNCTION The T A 8050A K is a 1.5A bi-directional DC motor driver and it can switch forward, reverse, stop and brake mode with input D ll and DI2. Protective functions are built in

p32a

Abstract: S450N
Contextual Info: ANALOG DEVICES □ High-Speed /V > 10 Programmable Micropower Operational Amplifier OP-32 FEATURES • • • • • • • • • • • • • p re c is io n Programmable Supply Current. 500nA to 2mA Single Supply Operation. +3Vto+30V

Contextual Info: T-1 3mm SOLID STATE LAMP W934GD14V GREEN Features Description lGENERAL PURPOSE LEADS. Phosphide Green Light Emitting Diode. lLOW POWER CONSUMPTION. The Green source color devices are made with Gallium lRELIABLE AND RUGGED. lLONG LIFE - SOLID STATE RELIABILITY.

Contextual Info: SUBMINIATURE SOLID STATE LAMP AM2520PBC01 BLUE Features Description lWIDE VIEWING ANGLE. on SiC Light Emitting Diode. lSUBMINIATURE PACKAGE. The Blue source color devices are made with InGaN lLONG LIFE SOLID STATE RELIABILITY. lLOW PACKAGE PROFILE. Package Dimensions

APDC04-41PWFA

Contextual Info: SURFACE MOUNT DISPLAY APDC04-41PWFA Features Description lLOW CURRENT OPERATION. Light Emitting Diode. l0.4INCH DIGIT HEIGHT. lEXCELLENT WHITE The source color devices are made with InGaN on SiC CHARACTER APPEARANCE. lI.C. COMPATIBLE lMECHANICALLY RUGGED.

W934YD

Abstract: W934YD14V
Contextual Info: T-1 3mm SOLID STATE LAMP W934YD14V YELLOW Features Description lGENERAL PURPOSE LEADS. Arsenide Phosphide on Gallium Phosphide Yellow Light lLOW POWER CONSUMPTION. The Yellow source color devices are made with Gallium lRELIABLE AND RUGGED. lLONG LIFE - SOLID STATE RELIABILITY.

hef4894bt

Abstract: hef4894
Contextual Info: Philips Sem iconductors Objective specification 12-stage shift-and-store register LED driver APPLIC A TIO N S O RD ERIN G AN D P A C K A G E INFORM ATION G EN ER A L D ESC R IPTIO N The HEF4894B is an 12 stage serial shift register having a storage latch associated with each stage for

4034BDC

Abstract: 771 fairchild
Contextual Info: 4034B 8-B IT UNIVERSAL BUS REGISTER G E N E R A L D E S C R IP T IO N — The 4034B is an 8 Bit Bi-directional Parallel/Serial Input/Output Bus Register with a Serial Data Input Dg , a Clock input (CP), an active H IG H asynchronous or synchro­ nous Paralleled Load/Parallel Enable Input (P L/ P E), two mode control inputs, Asynchronous/Syn­

APSA02-41PWFA

Contextual Info: SURFACE MOUNT DISPLAY APSA02-41PWFA Features l0.2INCH Description DIGIT HEIGHT. The source color devices are made with InGaN on SiC Light lLOW CURRENT OPERATION. lEXCELLENT WHITE CHARACTER APPEARANCE. Emitting Diode. lI.C. COMPATIBLE lMECHANICALLY RUGGED.

Contextual Info: SURFACE MOUNT DISPLAY APDC03-41PWFA Features l0.3INCH Description DIGIT HEIGHT. The source color devices are made with InGaN on lLOW CURRENT OPERATION. lEXCELLENT WHITE CHARACTER APPEARANCE. SiC Light Emitting Diode. lI.C. COMPATIBLE lMECHANICALLY RUGGED.

APSC02-41PWFA

Contextual Info: SURFACE MOUNT DISPLAY APSC02-41PWFA Features l0.2INCH Description DIGIT HEIGHT. The source color devices are made with InGaN on SiC Light lLOW CURRENT OPERATION. lEXCELLENT WHITE CHARACTER APPEARANCE. Emitting Diode. lI.C. COMPATIBLE lMECHANICALLY RUGGED.