SY 160 Search Results

DB874H105

Abstract: Decibel Products DB874H105 DB874H Decibel db874 db874 radome material abs radome 68KG4 DB380/DB874H105-SX/SY DB874H105-SX/SY
Contextual Info: DB874H105 E { -SX: 806-896 MHZ -SY: 870-960 MHZ Directional Panel Antenna Model Number Terminations DB874H105-SX/SY DB874H105ESX/SY Type N-Female 7-16 DIN Frequency Range -SX: -SY: Gain 806 - 896 MHz 870 - 960 MHz 11 dBd (13.1 dBi) VSWR < 1.5 : 1 Beamwidth

Decibel Products

Abstract: DB864H90-SX diode sy Decibel DB864H90-SY panel antenna DB5081
Contextual Info: DB864H90- { SX: 806-896 MHZ SY: 870-960 MHZ 90°, 12 dBd Mini Panel Antenna Model Number Termination Frequency Range Gain DB864H90-SX DB864H90-SY Type N-Female SX: SY: 806-896 MHz 870-960 MHz 12 dBd 14.1 dBi VSWR < 1.4:1 Beamwidth (3dB from max) Horizontal:

diode sy 171

Abstract: CapXon sy 171 CapXon series E167
Contextual Info: CapXon SY Series SY Series 7mm Low Impedance Long Life Features ◆ Operating temperature -55~105℃. ◆ 105℃ 2000Hours assured. ◆ For detail specifications, please refer to Engineering Bulletin NO.E167 ◆ RoHS Compliant Specifications Item Performance Characteristics

MH32S72AVJA-5

Contextual Info: MITSUBISHI LSIs MH32S72AVJA-5,-6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72AVJA is 33554432 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard 32M x 4 Sy nchronous DRAMs in TSOP.

D1415

Abstract: MH64S72VJG-5
Contextual Info: MITSUBISHI LSIs MH64S72VJG-5,-6 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72VJG is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard 64M x 4 Sy nchronous DRAMs in TSOP.

Contextual Info: CRYSTAL CLOCK OSCILLATORS Data Sheet 0612C Rev. D Differential Positive ECL DPECL SY-A29B0 Series Description The SY-A29B0 Series of quartz crystal oscillators provide DPECL Fast Edge compatible signals. This device is to operate using positive voltage and uses multiple ground pins for improved signal integrity. This

Contextual Info: BK600 SERIES DATA SHEET R-LINE DEVICES – BK600 SERIES FEATURE Radial leaded devices. Very high voltage surge capabilities. Available in lead-free version. PACKAGE DIMENSIONS D E SY A B C D E Max. Max. ±0.6 Max. Typ. BK600-110 15.0 15.0 5.1 6.5 0.6 SY BK600-150

DB854DD90-SY

Abstract: DBD104 DB508 DB5083
Contextual Info: AULEN DB854DD90-SX DB854DD9G-SY DIVERSITY MASTER DUAL ANTENNAS 11 dBd GAIN, 806-960 MHz * * 'V ' One of a series of DB850 Diversity Master antennas for cellular and ESMR applications, the DB854DD90-SX/SY has tw o vertical arrays in a single radome and provides dual slant

diode sy

Abstract: A29BX
Contextual Info: CRYSTAL CLOCK OSCILLATORS Data Sheet 0612C Rev. B Differential Positive ECL DPECL SY-A29B0 Series Description The SY-A29B0 Series of quartz crystal oscillators provide DPECL Fast Edge compatible signals. This device is to operate using positive voltage and uses multiple ground pins for improved signal integrity. This

Contextual Info: CRYSTAL CLOCK OSCILLATORS Data Sheet 0612C Rev. E Differential Positive ECL DPECL SY-A29B0 Series Description The SY-A29B0 Series of quartz crystal oscillators provide DPECL Fast Edge compatible signals. This device is to operate using positive voltage and uses multiple ground pins for improved signal integrity. This

Contextual Info: MEMORY Unbuffered 4 M x 72 BIT r .SY N<'Nil ^rlrÎONOUS> DYNAM IC RAWIIDIMM MB¡8?¡ndç¡072BZ-75/-1QÎ 168-pin, 4 Clock, 2-bank, based on 2 M x 8 Bit SDRAMs with SPD • DESCRIPTION The Fujitsu MB8504S072BZ is afully decoded, CMOS Sy nc hro no usJDynam ic Random Access Memory SDRAM

Contextual Info: _ 4 V1.1 SYM A A y - sy - sy - S,y - s. \' B B B B B B □ □ B B B B o - X y- s B B B B B B B B B B B B B B B B B B _ x _ yX _ 7 .5 y - s LO SPECIFICATION CURRENT RATING : 1 A INSULATOR RESISTANCE: 5000MQ MIN. DIELECTRIC WITHSTANDING : AC 500V.

Contextual Info: 4 V1.1 SYM A A y -sy -sy -\ ' S,y -s. B B B B B B □ □ B B B B O - - s y B B B B B B B B B B B B B B B B B n_ 1 2 1 REVISIONS DISCRIPTION DATE APPROVED SYM DISCRIPTION DATE APPROVED A A “ CUSTOMER DRAWING FOR REFERANCE ONLY, SAMPLES APPROVAL ARE REQUIRED!!

25F5

Abstract: Scans-0017369
Contextual Info: SY LV A N IA IS^ . . . . . engineering data service 25F5 QUICK REFERENCE DATA MECHANICAL DATA B u l b .T-5 Yi B a s e . E7-1, Miniature Button 7-Pin

Contextual Info: CML Semiconductor Products PRODUCT INFORMATION I é FX623 Call Progress Tone Decoder Publication D/623/3 July 1994 Provisional Issue Features • Measures Call Progress Tone Frequencies [‘B u sy ’, ‘Dial’, ‘Fax-Tone’ etc.] • Custom Tone Decoder

MH32S72DBFA

Abstract: MH32S72DBFA-6
Contextual Info: MITSUBISHI LSIs Preliminary Spec. Some contents are subject to change without notice. MH32S72DBFA -6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72DBFA is 33554432 - word x 72-bit Sy nchronous DRAM stacked structural module. This

2N6284

Abstract: 2N6283 2N6286 2N6287 16 amp npn darlington power transistors
Contextual Info: A LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6283, 2N6284, 2N6286,2N6287 160 WATT 20 AMP CONTINUOUS, 40 AMP PEAK ‘ MAXIMUM RATINGS P A RA M ET ER SY M B O L Collector Em itter Voltage 2N6283, 2N6286 2N6284, 2N6287 Vdc 80 100 Vdc V cB O 80 100 Em itter Base Voltage

MH32S72DBFA

Abstract: MH32S72DBFA-7 MH32S72DBFA-8 D2930
Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH32S72DBFA -7,-8 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72DBFA is 33554432 - word x 72-bit Sy nchronous DRAM stacked structural module. This

ba 663

Abstract: D1112 120k dynamic RAM
Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH28S72PJG -5,-6,-7 9,663,676,416-BIT 134,217,728-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH28S72PJG is 134,217,728 - word x 72-bit Sy nchronous DRAM stacked structural module. This

MH16S72DCFA-6

Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH16S72DCFA-6 1,207,959,552-BIT 16,777,216-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH16S72DCFA is 16777216 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard

MH8S72DCFD-6

Contextual Info: MITSUBISHI LSIs Preliminary Spec. Some contents are subject to change without notice. MH8S72DCFD-6 603,979,776-BIT 8,388,608-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH8S72DCFD is 8388608 - word x 72-bit Sy nchronous DRAM module. This consist of nine industry standard

MH32S72AVJA-6

Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH32S72AVJA-6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72AVJA is 33554432 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard

5977 TUBE

Abstract: 6AK4 tube sylvania 5977 tube 5977 TRIODE 5977 SM 4108 ec 360 tube 400C subminiature tubes 6ak4
Contextual Info: SYLVANIA SY LV A N IA fSp . . J 4 engineering data service 5977 QUICK R E F E R E N C E DATA M ECHANICAL DATA B u l b . T-3 Base . E8-10, Subminiature Button Flexible Leads

MH16S72DCFA-6

Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH16S72DCFA-6 1,207,959,552-BIT 16,777,216-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH16S72DCFA is 16777216 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard