SY 103 Search Results

SY-HS-230 HUMIDITY SENSOR

Abstract: SY-HS-230 SY-HS-230A RH 012C "Humidity Sensor" SY-HS-230B HS-230
Contextual Info: Humidity Sensor Module SY-HS-230 These modules convert the relatve humidity to the output voltage. Specifications Items SY-HS-230A SY-HS-230B Rated voltage DC 5.0V Rated power <3.0nA Operating temperature 0-60 'C Operating humidity 10~90%RH Storage humidity

SMC - SY5120

Abstract: SMC SY313 omron G71-OD16 SY7120 G71-OD16 SY340 431a1 diode sy GVVZS3000-21A-2 19n marking 2 pin diode
Contextual Info: High Capacity & Simple Choices Series SY 5 Port Rubber Seal Solenoid Valve SV SY SYJ SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD VFS VS VS7 VQ7 Series SY9000 newly realased 1.2-1 CE Marking Compliant Products The SY series complies with the EMC Directive and the Low Energy Directive based

d1415

Contextual Info: MITSUBISHI LSIs MH64S72AVJG-5,-6 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72AVJG is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard 64M x 4 Sy nchronous DRAMs in TSOP.

Contextual Info: 1.1.2.6 ÖLFLEX CLASSIC 110 SY 1 of 4 ÖLFLEX® CLASSIC 110 SY Control cable with numbered cores and steel wire braiding. With VDE registration No.7030. High safety due to mechanical protection. With

MH32S72AVJA-5

Contextual Info: MITSUBISHI LSIs MH32S72AVJA-5,-6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72AVJA is 33554432 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard 32M x 4 Sy nchronous DRAMs in TSOP.

D1415

Abstract: MH64S72VJG-5
Contextual Info: MITSUBISHI LSIs MH64S72VJG-5,-6 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72VJG is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard 64M x 4 Sy nchronous DRAMs in TSOP.

Contextual Info: MEMORY Unbuffered 4 M x 72 BIT r .SY N<'Nil ^rlrÎONOUS> DYNAM IC RAWIIDIMM MB¡8?¡ndç¡072BZ-75/-1QÎ 168-pin, 4 Clock, 2-bank, based on 2 M x 8 Bit SDRAMs with SPD • DESCRIPTION The Fujitsu MB8504S072BZ is afully decoded, CMOS Sy nc hro no usJDynam ic Random Access Memory SDRAM

Contextual Info: * SY100422-3 «5Y101422-T SYNERG Y 256 X 4 ECL RAM SY 100422-4 SY 101422-4 SEMICONDUCTOR DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Address access time, u a : 3/4ns max. Block select access time, tA B : 2ns max. Write pulse width, tww: 3ns min.

Contextual Info: HOLTEK HT6240-001/HT6240-002 Infrared Remote Encoder Features • • O p e ra tin g voltage: 2.2V~3.6V Low pow er consum ption F ew e x te rn a l p a rts A pplications • • C a r door co n tro llers S ecu rity sy stem s O th e r rem o te co n tro l sy stem s

4424 ym

Abstract: oki voice synthesizer msm6375 tba 2929 07FFD 20191 MSM505 MSM6376 KF-38S4 MSM6374-006 MSM6373-329
Contextual Info: O K I Semiconductor M S M 6375/4/3/2-X X X 1 M -b it/5 1 2 K -b it/2 5 6 K -b it/1 2 8 K -b it M A S K R O M SPEECH SY N TH E S IZ E R G ENER AL D ES C R IP TIO N T he M SM 6375 series is a n A D PC M speech sy n th esis LSI u tilizin g a C M O S sp eech p ro ­

MH64S72QJA

Abstract: MH64S72QJA-6
Contextual Info: MITSUBISHI LSIs MH64S72QJA -6 4,831,838,208-BIT 64,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72QJA is 64108864 - word x 72-bit Sy nchronous DRAM stacked structural module. This consist of thirty -six industry standard 32M x 4

"Ultrasonic Sensor"

Abstract: 22KA ultrasonic sensor circuit D5810m amplifer d-5810 40vac 07153 40VA
Contextual Info: CLASSIFICATION INSIDE AMPLIFER ULTRASONIC SENSOR CHRACTERISTICS Can't be influnced by the coler transparent degree,material metal,nonmental of objects take-off SERIES NEMBER SB SY SZ SS SCD SIZE DETECT DISTANCE RATED VOLTAGE CURRENT CONSUMED REFLECTION REFLECTION

MH32S72BBFA

Abstract: MH32S72BBFA-6
Contextual Info: MITSUBISHI LSIs MH32S72BBFA -6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BBFA is 33554432 - word x 72-bit Sy nchronous DRAM stacked structural module. This consist of thirty -six industry standard 16M x 4

MH32S72DBFA

Abstract: MH32S72DBFA-6
Contextual Info: MITSUBISHI LSIs Preliminary Spec. Some contents are subject to change without notice. MH32S72DBFA -6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72DBFA is 33554432 - word x 72-bit Sy nchronous DRAM stacked structural module. This

MH32S72DBFA

Abstract: MH32S72DBFA-7 MH32S72DBFA-8 D2930
Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH32S72DBFA -7,-8 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72DBFA is 33554432 - word x 72-bit Sy nchronous DRAM stacked structural module. This

MHW2528

Abstract: motorola hybrid amplifiers ANI021 CR2424 MHW3528 RWF 32 motorola small signal MOTOROLA hybrid amplifiers* reliability
Contextual Info: RF Product Bulletin ,.4:{:’ ,:$\‘ .,.,., .Sy,. ‘w~t\ \>\b .,.:JV * ! J Motorola’s CSPD adds their two new triple video dti~~qJ#~ts CRT Hybrid Amplifiers portfolio, MHW2528 and MHW3528 were designed for CR%@~t~r applications requiring high frequency

ba 663

Abstract: D1112 120k dynamic RAM
Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH28S72PJG -5,-6,-7 9,663,676,416-BIT 134,217,728-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH28S72PJG is 134,217,728 - word x 72-bit Sy nchronous DRAM stacked structural module. This

MH16S72DCFA-6

Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH16S72DCFA-6 1,207,959,552-BIT 16,777,216-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH16S72DCFA is 16777216 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard

MH8S72DCFD-6

Contextual Info: MITSUBISHI LSIs Preliminary Spec. Some contents are subject to change without notice. MH8S72DCFD-6 603,979,776-BIT 8,388,608-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH8S72DCFD is 8388608 - word x 72-bit Sy nchronous DRAM module. This consist of nine industry standard

D1113

Abstract: MH32S72AVJA-6
Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH32S72AVJA-6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72AVJA is 33554432 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard

Contextual Info: MITSUBISHI LSIs Preliminary Spec. Some contents are subject to change without notice. MH16S72AVJB-6 1,207,959,552-BIT 16,777,216-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH16S72AVJB is 16777216 - word x 72-bit Sy nchronous DRAM module. This consist of nine industry standard

MH16S72BDFA-7

Abstract: MH16S72BDFA-8
Contextual Info: MITSUBISHI LSIs MH16S72BDFA-7, -8 1,207,959,552-BIT 16,777,216-WORD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change w ithout notice. DESCRIPTION The MH16S72BDFA is 16777216 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen

MH32S72AVJA-6

Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH32S72AVJA-6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72AVJA is 33554432 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard

MH16S72DDFA-7

Abstract: MH16S72DDFA-8
Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH16S72DDFA-7, -8 1,207,959,552-BIT 16,777,216-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH16S72DDFA is 16777216 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen