SWITCHING TRANSISTOR 30V NPN Search Results

SWITCHING TRANSISTOR 30V NPN Result Highlights (5)

Part	Manufacturer	Description	Download
RX1214B130YI	Rochester Electronics LLC	NPN microwave power transistor	PDF
MX0912B251Y	Rochester Electronics LLC	NPN microwave power transistor	PDF
RZ1214B35YI	Rochester Electronics LLC	NPN microwave power transistor	PDF
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet

SWITCHING TRANSISTOR 30V NPN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SEMICONDUCTOR 2N3904E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage	Original	2N3904E 2N3906E. x10-4 100mA Width300	PDF
2N3904 Contextual Info: SEMICONDUCTOR 2N3904 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage	Original	2N3904 2N3906. x10-4 2N3904	PDF
SBC548 Abstract: Transistor 4501 ic SBC558 SBC-558 Contextual Info: SBC548 Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with SBC558 Ordering Information Type NO. Marking SBC548 SBC548 Package Code TO-92	Original	SBC548 SBC558 KST-9026-000 100mA, SBC548 Transistor 4501 ic SBC558 SBC-558	PDF
2N3906V Abstract: 2N3904V Contextual Info: SEMICONDUCTOR 2N3904V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage	Original	2N3904V 2N3906V. x10-4 100mA Width300 2N3906V 2N3904V	PDF
BC848U Abstract: BC858U Contextual Info: BC848U Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858U Ordering Information Type NO. Marking BC848U Package Code BS SOT-323	Original	BC848U BC858U OT-323 KST-3021-001 100mA, BC848U BC858U	PDF
2N3904U Abstract: 2N3906U Contextual Info: SEMICONDUCTOR 2N3904U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage	Original	2N3904U 2N3906U. x10-4 100mA Width300 2N3904U 2N3906U	PDF
Contextual Info: SEMICONDUCTOR 2N3904C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage	Original	2N3904C 2N3906C. 10Hz15 100MHz x10-4 100mA Width300	PDF
Contextual Info: SEMICONDUCTOR 2N3904V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage	Original	2N3904V 2N3906V. x10-4	PDF
BC848F Abstract: BC858F Contextual Info: 7 BC848F Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858F Ordering Information Type NO. Marking BC848F Package Code SA SOT-23F	Original	BC848F BC858F OT-23F KST-2091-000 100mA, BC848F BC858F	PDF
BC848F Abstract: BC858F Contextual Info: BC848F 7 Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858F Ordering Information Type NO. Marking BC848F Package Code SOT-23F SA	Original	BC848F BC858F OT-23F KST-2091-000 BC848F BC858F	PDF
BC848UF Abstract: BC858UF Contextual Info: 7 BC848UF Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858UF Ordering Information Type NO. Marking BC848UF BS Package Code SOT-323F	Original	BC848UF BC858UF OT-323F KST-3040-001 100mA, BC848UF BC858UF	PDF
BC848UF Abstract: Transistor BC858UF Contextual Info: 7 BC848UF Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858UF Ordering Information Type NO. Marking BC848UF BS Package Code SOT-323F	Original	BC848UF BC858UF OT-323F KST-3040-001 100mA, BC848UF Transistor BC858UF	PDF
Contextual Info: 7 BC848UF Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858UF Ordering Information Type NO. Marking BC848UF BS Package Code SOT-323F	Original	BC848UF BC858UF OT-323F KST-3040-001 100mA,	PDF
BC848 Abstract: Transistor SA sot-23 BC858 Contextual Info: BC848 Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858 Ordering Information Type NO. Marking BC848 Package Code SA SOT-23 : hFE rank	Original	BC848 BC858 OT-23 KST-2008-000 100mA, BC848 Transistor SA sot-23 BC858	PDF

Contextual Info: SEMICONDUCTOR 2N3904A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.	Original	2N3904A 2N3906A. 100mA 100MHz x10-4 Width300	PDF
2N3904 Abstract: 2N3906 Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3904 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c e x =50nA Max. , IBL=50nA(Max.) @ V ce =30V , Veb=3V. • Excellent DC Current Gain Linearity.	OCR Scan	2N3904 2N3906. 300ns 300//S, 2N3904 2N3906	PDF
BC848U Abstract: BC858U Contextual Info: BC848U NPN Silicon Transistor Descriptions PIN Connection • General purpose application • Switching application 3 Features • High voltage : VCEO=30V • Complementary pair with BC858U 1 2 Ordering Information SOT-323 Type NO. Marking Package Code BC848U	Original	BC848U BC858U OT-323 KSD-T5D031-000 BC848U BC858U	PDF
2N3904C Contextual Info: SEMICONDUCTOR 2N3904C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C A FEATURES ᴌLow Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) N E K @VCE=30V, VEB=3V. ᴌExcellent DC Current Gain Linearity.	Original	2N3904C 2N3906C. 300ns 1N916 2N3904C	PDF
transistor kn3904 Abstract: KN3904 KN3906 Contextual Info: SEMICONDUCTOR TECHNICAL DATA KN3904 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=50nA Max. , @VCe=30V, V eb=3V. • Low Saturation Voltage : VCE(sat)=0.3V(Max.) @Ic=50mA, IB=5mA.	OCR Scan	KN3904 KN3906. transistor kn3904 KN3904 KN3906	PDF
Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3904U EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=50nA Max. , IBL=50nA(Max.) @ V ce =30V , Veb=3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage	OCR Scan	2N3904U 2N3906U.	PDF
2SCR542P Contextual Info: Midium Power Transistors 30V / 5A 2SCR542P  Dimensions (Unit : mm)  Structure NPN Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically VCE (sat) = 0.4V (Max.) (IC / IB= 2A / 100mA) (1) (2) (3) 2) High speed switching	Original	2SCR542P 100mA) R0039A 2SCR542P	PDF
2N3735 Abstract: 2n3734 Contextual Info: GENERAL PURPOSE SILICON NPN TRANSISTOR 2N3734 / 2N3735 • Hermetic TO-39 Metal Package • General purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated 2N3734 2N3734 50V 30V Symbols VCBO VCEO VEBO IC PD	Original	2N3734 2N3735 2N3735 O-205AD)	PDF
2n3734 Contextual Info: GENERAL PURPOSE SILICON NPN TRANSISTOR 2N3734 / 2N3735 • Hermetic TO-39 Metal Package • General purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated 2N3734 2N3734 50V 30V Symbols VCBO VCEO VEBO IC PD	Original	2N3734 2N3735 2N3734 100mA O-205AD)	PDF
2SCR512P Contextual Info: Midium Power Transistors 30V / 2A 2SCR512P  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = 0.4V (Max.) (IC / IB= 700mA / 35mA) (1) (2) (3) 2) High speed switching	Original	2SCR512P 700mA R0039A 2SCR512P	PDF

SWITCHING TRANSISTOR 30V NPN Search Results

SWITCHING TRANSISTOR 30V NPN Result Highlights (5)

SWITCHING TRANSISTOR 30V NPN Datasheets Context Search

2N3904

SBC548

2N3906V

BC848U

2N3904U

BC848F

BC848F

BC848UF

BC848UF

BC848

2N3904

BC848U

2N3904C

transistor kn3904

2SCR542P

2N3735

2n3734

2SCR512P