2N3735 Search Results

2N373

Abstract: 2n3735
Contextual Info: 2N3735 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3735J

2N4122

Abstract: 2N4121 2N4134 2n3771 2N4080 2N4135 2N3713 2N3714 2N3715 2N3716
Contextual Info: 02 58354 ADVANCED SEMICO ND UC TOR_ _ ADVANCED S E M I C O N D U C T O R - 05 DE I 0 E S Ô 3 S 4 82 D 00044 DDDDD44 □ D 7"w- s 2— o S I L I C O N _« _ _ THAPJSISTOfiS Pd DEVICE TYPE NO. 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741

2N3735

Abstract: 2n3734
Contextual Info: GENERAL PURPOSE SILICON NPN TRANSISTOR 2N3734 / 2N3735 • Hermetic TO-39 Metal Package • General purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated 2N3734 2N3734 50V 30V Symbols VCBO VCEO VEBO IC PD

2N3735

Contextual Info: Data Sheet No. 2N3735 Generic Part Number: 2N3735 Type 2N3735 Geometry TBD Polarity NPN Qual Level: Pending REF: MIL-PRF-19500/395 Features: • • • • General-purpose NPN silicon switching transistor which operates over a wide temperature range. Housed in a TO-39 case.

Contextual Info: 2N3735 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)75 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)200n÷ @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.20 h(FE) Max. Current gain.80

2N3735

Contextual Info: 2N3735 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3735J

Contextual Info: 2N3735L Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3735LJ

2N3735

Abstract: 250M JANTX 2N3735 15A80
Contextual Info: 2N3735 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)

2N3735

Contextual Info: 2N3735 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N3735 Availability Online Store

Contextual Info: 2N3735+JANS Transistors Si NPN Power HF BJT Military/High-RelY V BR CEO (V)50 V(BR)CBO (V)75 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)200n÷ @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.20

140BQ

Abstract: 2MTC
Contextual Info: SEM ICONDUCTOR TECHNICAL DATA 2N3735JAN, JT X , JTX V , JA N S 2N3737JAN, JT X , JTX V , JA N S C RV STÄ LO N CS »VôÉBTBns H ighw ay Processed per MIL-S-19500 395 Suite 14 Ronkonftoma, N.Y. 1177f| NPN Silicon Sm all-Signal Tran sisto rs designed tor Qoootni purpose switching iW 3 ampMier appvcai-oa#

JANTX 2N3735

Abstract: 2n3735
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/395 DEVICES LEVELS 2N3735 2N3737 2N3735L 2N3737UB JAN

Contextual Info: 2N3735+JAN Transistors Si NPN Power HF BJT Military/High-RelY V BR CEO (V)50 V(BR)CBO (V)75 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)200n÷ @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.20

100MHZ

Abstract: 2N3735CSM4
Contextual Info: 2N3735CSM4 Medium Current NPN Silicon Annular Transistors Designed for High-Speed Switching and Driver Applications in a Ceramic Surface Mount Package MECHANICAL DATA Dimensions in mm inches 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) FEATURES

Contextual Info: 2N3735 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)

2n3734

Contextual Info: GENERAL PURPOSE SILICON NPN TRANSISTOR 2N3734 / 2N3735 • Hermetic TO-39 Metal Package • General purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated 2N3734 2N3734 50V 30V Symbols VCBO VCEO VEBO IC PD

2N3735

Abstract: 2N3734
Contextual Info: Datasheet _ ^ - M confNil — 2N3734 2N3735 Sem iconductor covp. NPN SILICON TRANSISTORS 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE M anufacturers of W orld C lass D iscrete S em iconductors

Contextual Info: 2N3735L Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3735LJ

2N3735L

Abstract: 2N3735LJ 2N3735LJS 2N3735LJV 2N3735LJX
Contextual Info: 2N3735L Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3735LJ

2N3735

Abstract: JANTX 2N3735 2N3735J 2N3735JS 2N3735JV 2N3735JX 2N3735 JANS
Contextual Info: 2N3735 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3735J

Contextual Info: TYPES 2N3734, 2N3735 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 1 1 9 8 0 , M A R C H 1973 - R E V IS E D O C T O B E R 1 9 7 8 FOR H IG H -C U R R E N T, HIGH-SPEED SW ITCH IN G A N D D R IV E R APPLICATIO N S • hpE Guaranteed from 10 mA to 1.5 A

2N3735 MOTOROLA

Abstract: TO-206AD 2N3734 MOTOROLA 2N3725 2n3735 2N3734
Contextual Info: M OTOROLA SC -CXSTRS/R F> 6367254 Tb MOTOROLA SC DE|b3t.7ESM OOflSSEO 5 | 96D 8 2 2 2 0 XSTRS/R F _ ! MAXIM UM RATINGS 2N3735 2N3737 Symbol 2N3734 Collector-Emitter Voltage VCEO 30 50 Vdc Collector*Base Voltage VcBO 50 75 Vdc Emitter-Base Voltage

Contextual Info: 2N3735 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)

Condor c-fi 30

Abstract: w33 transistor 2N3735 2N3737 2N3737JTX 2N3735J 2N3735JTX 2N3737J desi 30 2N3735 MOTOROLA
Contextual Info: MOTOROU Order this document 2N3735JT~ SEMICONDUCTOR TECHNICAL DATA o 2N3735JTX, JANS 2N3737JTX Processed per MIL4-I NPN Silicon Smal14ignal tlb ,11 9500/395 Transistors . . .deeigned for genera~urpoee switching and amplifier applications. 2N3737 is Not Recommended for New Desi$#$+;’