SWITCHING DIODE 12C Search Results

TO-220HV

Contextual Info: DSEE15-12CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode IFAV = 15 A VRRM = 1200 Vc trr = 35 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 1200 600 Symbol Type ISOPLUS 220HVTM DSEE15-12CC 1 Conditions 2 3 TC = 100°C; rectangular, d = 0.5

Contextual Info: DSEP 15-12CR HiPerDynFREDTM Epitaxial Diode IFAV = 15 A VRRM = 1200 V trr = 20 ns with soft recovery Electrically Isolated Back Surface Preliminary Data VRSM VRRM V V 1200 1200 Type A C ISOPLUS 247TM C DSEP 15-12CR A Isolated back surface * A = Anode, C = Cathode

Contextual Info: DSEE29-12CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 VQ trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMQ VRRM V V 1200 600 Type ISOPLUS220TM 1 DSEE29-12CC 1 2 2 3 3 Isolated back surface * Symbol

30-12CR

Contextual Info: DSEP 30-12CR Advanced Technical Information HiPerDynFREDTM IFAV = 30 A VRRM = 1200 V trr = 20 ns with soft recovery Electrically Isolated Back Surface VRSM VRRM V V 1200 1200 Type A C ISOPLUS 247TM C A Isolated back surface * DSEP 30-12CR A = Anode, C = Cathode

Contextual Info: Power Management ICs for Automotive Body Control LED Indicator Driver BD8105FV No.11039ECT01 ●Description The BD8105FV is a serial parallel control LED driver with 35V input voltage rating. Responding to the 3-line serial data, it turns the 12ch open drain output on/off.

SP6134

Abstract: DO5010P-332HC FDS6676S MBR0530 SP6132 SP6134CU TDK EMI filter 30a
Contextual Info: SP6134 Dual Supply Synchronous Buck Controller FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ VCC 1 3V to 15V Step Down Achieved Using Dual Input Small 10-Pin MSOP Package 2A to 15A Ouput Capability Highly Integrated Design, Minimal Components

class d amplifier schematic hip4080

Abstract: hip4080 h-bridge gate drive schematics circuit HIP4080 amplifier circuit diagram class D oscilloscope schematic EAS 200 lem la 50p mosfet p 3055 RM1S HIP2060 mosfet L 3055 high power fet audio amplifier schematic
Contextual Info: Harris Semiconductor No. AN9539 Harris Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an

IRFP27N60KPBF

Contextual Info: PD - 95479A SMPS MOSFET IRFP27N60KPbF Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive l Lead-Free Benefits l Low Gate Charge Qg results in Simple

Contextual Info: PD-90330G IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF450 500V ID 0.400Ω 12A The HEXFET ®technology is the key to International

100-C

Abstract: IRFBG20 MOSFET 1000v 10a IRFBG20 TO-220
Contextual Info: PD-9.604A International S Rectifier IRFBG20 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 1000V R DS on = 11 ß lD = 1.4 A Description DATA SHEETS

IRLR024

Abstract: IRLU024 SiHLR024 SiHLR024-E3 SiHLU024 SiHLU024-E3
Contextual Info: IRLR024, IRLU024, SiHLR024, SiHLU024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 18 • Straight Lead (IRLU024/SiHLU024) Qgs (nC) 4.5 • Available in Tape and Reel 12 • Logic-Level Gate Drive

IRFR9024

Abstract: IRFU9024 SiHFR9024 SiHFR9024-E3 SiHFU9024
Contextual Info: IRFR9024, IRFU9024, SiHFR9024, SiHFU9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 60 RDS(on) (Ω) VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Single S • Halogen-free According to IEC 61249-2-21 Definition

Q503

Contextual Info: VS-12CWQ03FNPbF Vishay Semiconductors Schottky Rectifier, 2 x 6 A FEATURES Base common cathode 4 • Popular D-PAK outline • Center tap configuration • Small foot print, surface mountable • Low forward voltage drop • High frequency operation 2 Common

12CTQ040PBF

Abstract: 12ctq045pbf 12ctq045
Contextual Info: VS-12CTQ.PbF Series, VS-12CTQ.-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 6 A FEATURES Base common cathode 2 • 175 °C TJ operation • Center tap TO-220 package • Low forward voltage drop • High frequency operation TO-220AB

Contextual Info: International Is ] Rectifier 4055452 0015530 INR PD-9458C IRFP450 INTERNATIONAL HEXFET® P o w e r M O S F E T • • • • • • 05b bSE RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling

Contextual Info: MASS45E International tor Rectifier 001 • IN R PD-9.506B IRFBC40 INTERNATIONAL R E C T I F I E R H EXFEr Power M O S FE T • • • • • O O lM ' îb e Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: |I N R International ligi Rectifier PD-9.700A IRFD014 INTERNATIONAL RE C T IF IE R HEXFET Power MOSFET Dynamic dv/dt Rating For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements bSE D

mosfet 10a 800v

Abstract: IRFAE50 diode 71A
Contextual Info: PD - 90574 IRFAE50 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE50 BVDSS 800V RDS(on) 1.2Ω ID 7.1Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRFY9240C

Abstract: IRFY9240CM U 94a
Contextual Info: PD - 91295B POWER MOSFET THRU-HOLE TO-257AA IRFY9240C,IRFY9240CM 200V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number Rds(on) Id Eyelets IRFY9240C 0.51 Ω -9.4A Ceramic IRFY9240CM 0.51 Ω -9.4A Ceramic HEXFET® MOSFET technology is the key to International

rectifier diode for max 250v 1.5A

Abstract: IRFF420 JANTX2N6794 JANTXV2N6794 rectifier 15A, 500V rectifier diode 250V 1.5A
Contextual Info: PD - 90429D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF420 JANTX2N6794 JANTXV2N6794 REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number IRFF420 BVDSS 500V RDS(on) 3.0Ω ID 1.5A ® The HEXFET technology is the key to International

transistor 1451 sd

Abstract: IRFV064
Contextual Info: Data Sheet No. PD-9.877 INTERNATIONAL RECTIFIER I$R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRPV064 N-CHANNEL 60 Volt, 0.017 Ohm HEXFET Product Summary Part Number The HEXFET® technology is the key to International Rectifier’s advanced line of power M O SFE T transistors.

IRF530S

Abstract: IRL3103L IRL3715ZCL IRL3715ZCS
Contextual Info: PD - 94783 IRL3715ZCS IRL3715ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET VDSS RDS on max 11m: 7.0nC D2Pak IRL3715ZCS TO-262 IRL3715ZCL 20V Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance

AN-994

Abstract: EIA-541 IRFR120 IRFU120
Contextual Info: PD - 95092A IRLR7833PbF IRLU7833PbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS on at 4.5V VGS

Contextual Info: PD - 9.1330C International IGR Rectifier IRF7413 HEXFEr Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching V d s s = 30V ^D S o n = 0 . 0 1 1 Q