SWITCHING APPLICATION OF IRF840 Search Results

UC3875 ZVS design

Abstract: resonant full bridge schematic U-136A Unitrode uc3875 transformer tank design calculation power transformer tank calculation transformer less power supply 12 volt 3A DESIGN WITH UC3875 UC3875 dc/dc converter UC3875
Contextual Info: U-136A APPLICATION NOTE PHASE SHIFTED, ZERO VOLTAGE TRANSITION DESIGN CONSIDERATIONS and the UC3875 PWM CONTROLLER BILL ANDREYCAK ABSTRACT This Application Note will highlight the design considerations incurred in a high frequency power supply using the Phase Shifted Resonant PWM control technique. An overview of this switching technique including

UC3875 ZVS design

Abstract: resonant full bridge schematic DESIGN WITH UC3875 U-136A Unitrode uc3875 UC3875 Bill Andreycak zero voltage switching pwm full bridge converter 1N5820 leg of 10K variable resistor
Contextual Info: U-136A APPLICATION NOTE PHASE SHIFTED, ZERO VOLTAGE TRANSITION DESIGN CONSIDERATIONS and the UC3875 PWM CONTROLLER BILL ANDREYCAK ABSTRACT This Application Note will highlight the design considerations incurred in a high frequency power supply using the Phase Shifted Resonant PWM control technique. An overview of this switching technique including

UC3875 ZVS design

Abstract: resonant full bridge schematic U-136A Unitrode uc3875 DESIGN WITH UC3875 UC3875 dc/dc converter SEM-700 slope in uc3875 SLUA107 UC3875
Contextual Info: U-136A APPLICATION NOTE PHASE SHIFTED, ZERO VOLTAGE TRANSITION DESIGN CONSIDERATIONS and the UC3875 PWM CONTROLLER BILL ANDREYCAK ABSTRACT This Application Note will highlight the design considerations incurred in a high frequency power supply using the Phase Shifted Resonant PWM control technique. An overview of this switching technique including

Full-bridge series resonant converter

Abstract: AN9506 international rectifier power mosfets catalog zvs driver SEM600 ISL6573 RC snubber mosfet design FULL WAVE mosfet RECTIFIER CIRCUITS ISL6572 mosfet with schottky body diode
Contextual Info: Designing with the ISL6752, ISL6753 ZVS Full-Bridge Controllers Application Note Introduction The ZVS Zero Voltage Switching full-bridge topology has been around for many years and has become the industry’s workhorse. One of the drawbacks to this topology is the

Contextual Info: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

SMD resistors 1022

Abstract: AN-994 IRF840S SMD-220
Contextual Info: PD-9.1013 International Sür]Rectifier IRF840S HEXFET P ow er M O SFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V,DSS : 5 0 0 V

Contextual Info: IRF840L, SiHF840L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements

Application of irf840

Abstract: IRF840PBF SiHF840 IRF840 SiHF840-E3 irf840 vishay
Contextual Info: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

IRF840LC

Abstract: SiHF840LC SiHF840LC-E3
Contextual Info: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve

irf840b

Contextual Info: IRF840B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness

Contextual Info: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

RECTIFIER DIODE UG 94

Abstract: smd diode 12c IRF840S marking S54 SMD CODE
Contextual Info: PD-9.1013 International jK?R Rectifier IRF840S HEXFET Power MOSFET D VDSS= 500V G\ _ h L L Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements ^DS on = 0.85Q

Contextual Info: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve

Contextual Info: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve

Contextual Info: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve

IRF840B

Abstract: IRF840B free
Contextual Info: IRF840B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness

Contextual Info: IRF840B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness

Contextual Info: IRF840B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness

transistor tip 1050

Contextual Info: IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V VGS Rating • Reduced Ciss, Coss, Crss

Contextual Info: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve

Contextual Info: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve

Contextual Info: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration