SVP32 Search Results
SVP32 Price and Stock
Abracon Corporation ASSVP-32.768MHZ-C12-T160MHz; SMD; 15pF; -40÷85°C |
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ASSVP-32.768MHZ-C12-T | 1,000 | 1,000 |
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Ecliptek Corporation ASSVP-32.768MHZ-C12-TSSXO Oscillators |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ASSVP-32.768MHZ-C12-T |
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SVP32 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: P-SVP32-1125-0.65A Unit: nn May 2006 |
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p-svp32-1125-0 | |
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Contextual Info: P-SVP32-1125-0.65A |
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p-svp32-1125-065ap-svp32-1125-0 | |
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Contextual Info: TOSHIBA cIOti7 2 4 a 0 0 2 ô b fl2 131 TC59R1809VK/HK PRELIMINARY 2,097,152 WORD x 9-BIT RAMBUS DYNAMIC RAM Description TheTC59R1809VK/HK Rambus Dynamic RAM RDRAM is a next-generation high-speed CMOS DRAM with a 2,097,152 x 9-bit organization and built-in slave logic. The 36,864 sense amps of the DRAM core are used as cache to achieve data |
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tc59r1809vk/hkthetc59r1809vk/hk500mb/s32-pin+3 | |
mb8117400Contextual Info: FUJITSU Sepi zeliti Edition 2.0 DATA SHEET MB8117400-60/-70/-80 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8117400 is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessfcle in 4-bit increments. The MB8117400 features a ’ fast page’ mode of |
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mb8117400-60/-70/-80mb8117400196-bitssd-08285-02-93-ds | |
hfdwContextual Info: _ ü 16/18Mbit 2Mx8/9 & 64/72Mbit (8Mx8/9) ConcurrentRDRAM Overview VDD GND BUSDATA[8] GND BUSDATA[7] (NC) BUSENABLE VDD BUSDATA[6] GND BUSDATA[5] VDDA RXCLK GNDA TXCLK VDD BUSDATA[4] GND BUSCTRL SIN VREF SOUT BUSDATA[3] GND BUSDATA[2] (NC) |
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16/18mbit64/72mbit16/18/64/72-m600mhz+1 | |
TC59R1809Contextual Info: High Speed Dynamic RAM Rambus DRAM Capacity Type No. Data Transfer Rats ns Organization Max Min Hit Latency (ns) Read Writs Power Power Supply (V) Dissipation (mW) No. of Pins 4.5MBit ‘ TC59R0409VK 524,288 x 9 2 5 48 16 5V±10% 1325 32 18MBit "TC59R1809VK |
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18mbittc59r0409vktc59r1809vktc85rt000vk+7 | |
mb8116400
Abstract: 8116400 11cxa
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mb8116400024-bitsjv0040-939j48116400+1 | |
GM73V1892
Abstract: concurrent RDRAM 72 concurrent rdram LG LG concurrent RDRAM 1I159 gm73v189 gm73v
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gm73v1892gm73v168232-pinsvp-32+6 | |
Toshiba rdram
Abstract: TC59R1809
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tc59r1809vk/hk500mb/s32-pintc59r1809vk/h+3 | |
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Contextual Info: September 1993 Edition 4.1 FUJITSU DATA SHEET M B 8 1 1 6 4 Ö O -6 0 /-7 0 /-8 0 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu M B8116400 is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 |
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b8116400mb811640010jrefv32002s-5c+1 | |
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Contextual Info: Sept FUJITSU Edition zditk 4.1 DATA SHEET MB8116WO-60/-70/-80 CMOS 16Mx 1 BIT FAST PAGE MODE DYNAMIC RA CMOS 16,777,216 x 1 Bit Fast Page Mode Dynamic RAM ' t The Fujitsu MB8116100 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 16,777,216 memory cells in a x1 configuration. The MB8116100 features a ’ fast page" mode of |
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mb8116wo-60/-70/-80mb8116100096-bits0004d+3 | |
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Contextual Info: September 1993 Edition 4.1 FUJITSU DATA SHEET M B 8 1 1 6 1 0 0 -6O/-7O/-8O CMOS 16M x 1 BIT FAST PAGE MODE DYNAMIC RA CMOS 16,777,216 x 1 Bit Fast Page Mode Dynamic RAM The Fujitsu MB8116100 is a fully deooded CMOS Dynamic RAM DRAM that contains a total of |
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mb8116100096-bits901typ2002s | |
ag markingContextual Info: September 1993 Edition 3.1 FUJITSU DATA SHEET MB8116101-60/-70/-80 CMOS 16M x 1 BIT NIBBLE MODE DYNAMIC RAM CMOS 16,777,216 x 1 BIT Nibble Mode Dynamic RAM The Fujitsu MB8116101 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 16,777,216 memory cells in a x1 configuration. The MB8116101 features a ’’nibble” mode of |
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mb8116101-60/-70/-80mb8116101096-bitsjv0088-939j3+1 | |
HY5RC1809
Abstract: concurrent rdram L3C analog hyundai concurrent rdram hyundai rdram concurrent RDRAM 72 HY5RC1809-66 concurrent rdram hyundai concurrent rdram 72 mbit HY5RC1809-53
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18/64msvp-32hy5rc1809concurrent rdram+8 | |
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Z2400
Abstract: a4 marking
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mb8116100096-bitsofthemb8116100sd-08369-003-93-ds+2 | |
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Contextual Info: September 1993 Editbn 4.1 FUJITSU DATA SHEET MB811 6400-60/-70/-80 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8116400 is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4 —bit increments. The MB8116400 features a ’’fast page” mode of |
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mb811mb8116400024-bits90ityp+3 | |
mb8117400Contextual Info: September 1993 Edition 2.0 FUJITSU DATA SHEET MB81174ÛO-60/-70/-80 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8117400 is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The MB8117400 features a "fast page’ mode of |
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mb81174o-60/-70/-80mb8117400196-bits+3 | |
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Contextual Info: September 1993 Edition 3.1 FUJITSU DATA SHEET MB8116101-60/-70/-80 CM O S 16M x 1 B IT NIBBLE M O D E DYNAMIC RAM CMOS 16,777,216 x 1 BIT Nibble Mode Dynamic RAM The Fujitsu MB8116101 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 16,777,216 memory cells in a x1 configuration. The MB8116101 features a "nibble" mode of |
OCR Scan |
mb8116101-60/-70/-80mb8116101096-bitsv32002s-5c | |
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Contextual Info: September 1993 Edition 2.0 FUJITSU DATA SHEET MB811740Û-60/-70/-80 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8117400 is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The MB8117400 features a "fast page” mode of |
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mb811740mb8117400196-bitssvp-32p-m02+2 | |
KB918365
Abstract: PID dc motor control with avr project light following robot diagram using microcontroller ATMEGA1284P avr studio 5 code for controlling robot by usb port pid for line following robot atmel bootloader tutorial PID code for avr circuit diagram of pid controller stopwatch schematic diagram
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s/0j18com/docs/0j20com/2008/02/avr-programming-onmackb918365+9 | |