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Catalog Datasheet	Type	Document Tags	PDF
SVD2N60F Abstract: SVD4N60 Contextual Info: SVD2N60M/SVD2N60F 2A, 600V N-Channel MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored	Original	svd2n60m/svd2n60f o-251-3l o-220f-3l svd2n60f +1svd4n60	PDF
SVD4N60 Abstract: SVD4N60F SVD4N60D 4A,600V 4A600V SVD4N60T svd4n TO-252-2L Silan Semiconductors TO-220F Contextual Info: SVD4N60D/F/T 4A600V N沟道增强型场效应管描述 SVD4N60D/F/T N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的S-RinTM平面高压VDMOS 工艺技术制造。先进的工艺及条状的原胞设计结构使得该产品具有	Original	svd4n60d/f/t 4a600v 4a600vrds svd4n60t +10o-220-3l svd4n60f o-220f-3l svd4n60 svd4n60d 4a,600v svd4n to-252-2l silan semiconductors to-220f	PDF

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SVD2N60F

Abstract: SVD4N60
Contextual Info: SVD2N60M/SVD2N60F 2A, 600V N-Channel MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored

Original

svd2n60m/svd2n60f o-251-3l o-220f-3l svd2n60f +1

PDF

SVD4N60

Abstract: SVD4N60F SVD4N60D 4A,600V 4A600V SVD4N60T svd4n TO-252-2L Silan Semiconductors TO-220F
Contextual Info: SVD4N60D/F/T 4A600V N沟道增强型场效应管描述 SVD4N60D/F/T N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的S-RinTM平面高压VDMOS 工艺技术制造。先进的工艺及条状的原胞设计结构使得该产品具有

Original

svd4n60d/f/t 4a600v 4a600vrds svd4n60t +10

PDF