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    SVD2N60F

    Abstract: SVD4N60
    Contextual Info: SVD2N60M/SVD2N60F 2A, 600V N-Channel MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored


    Original     		svd2n60m/svd2n60fo-251-3lo-220f-3lsvd2n60f+1svd4n60 PDF

    SVD2N70

    Contextual Info: SVD2N70M/SVD2N70F 2A, 700V N-Channel MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored


    Original     		svd2n70m/svd2n70fo-251-3l30typo-220f-3l+1svd2n70 PDF

    SVD2N60F

    Abstract: svd2n60 SVD2N60D SVD2N60M SVD2N60T 2A600V 2A-600V TO-251-3L 13105 SVD2N
    Contextual Info: SVD2N60M/F/T/D 2A600V N沟道增强型场效应管 描述 SVD2N60M/F/T/D N沟道增强型高压功率MOS场效 应晶体管采用士兰微电子的S-RinTM平面高压VDMOS 工艺 技术制造。先进的工艺及条状的原胞设计结构使得该产品


    Original     		svd2n60m/f/t/d2a600v2a600vrdssvd2n60m+10o-251-3lsvd2n60fo-220f-3lsvd2n60svd2n60dsvd2n60t2a-600vto-251-3l13105svd2n PDF